Results: 1-25 | 26-37
Results: 1-25/37

Authors: Sarangi, D Godon, C Granier, A Moalic, R Goullet, A Turban, G Chauvet, O
Citation: D. Sarangi et al., Carbon nanotubes and nanostructures grown from diamond-like carbon and polyethylene, APPL PHYS A, 73(6), 2001, pp. 765-768

Authors: Angleraud, B Mubumbila, N Tessier, PY Fernandez, V Turban, G
Citation: B. Angleraud et al., Bonding structure of carbon nitride films deposited by reactive plasma beam sputtering, DIAM RELAT, 10(3-7), 2001, pp. 1142-1146

Authors: Rhallabi, A Turban, G
Citation: A. Rhallabi et G. Turban, Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture usinga three-dimensional Monte Carlo model, J VAC SCI A, 19(3), 2001, pp. 743-749

Authors: Benlahsen, M Racine, B Zellama, K Turban, G
Citation: M. Benlahsen et al., On the hydrogen incorporation, intrinsic stress and thermal stability of hydrogenated amorphous carbon films deposited from an electron cyclotron resonance plasma, J NON-CRYST, 283(1-3), 2001, pp. 47-55

Authors: Aumaille, K Granier, A Grolleau, B Turban, G
Citation: K. Aumaille et al., Mass spectrometric investigation of the positive ions formed in low-pressure oxygen/tetraethoxysilane and argon/tetraethoxysilane plasmas, J APPL PHYS, 89(9), 2001, pp. 5227-5229

Authors: Aumaille, K Granier, A Schmidt, M Grolleau, B Vallee, C Turban, G
Citation: K. Aumaille et al., Study of oxygen/tetraethoxysilane plasmas in a helicon reactor using optical emission spectroscopy and mass spectrometry, PLASMA SOUR, 9(3), 2000, pp. 331-339

Authors: Hong, JG Granier, A Goullet, A Turban, G
Citation: Jg. Hong et al., In situ deposition and etching process of a-C : H : N films in a dual electron cyclotron resonance-radio frequency plasma, DIAM RELAT, 9(3-6), 2000, pp. 573-576

Authors: Durand-Drouhin, O Zeinert, A Benlahsen, M Zellama, K Kre, R Turban, G Grosman, A
Citation: O. Durand-drouhin et al., On the microstructural, optical and mechanical properties of hydrogenated amorphous carbon films deposited in electron cyclotron resonance plasma, DIAM RELAT, 9(3-6), 2000, pp. 752-755

Authors: Vallee, C Rhallabi, A Granier, A Goullet, A Turban, G
Citation: C. Vallee et al., Estimation of the TEOS dissociation coefficient by electron impact, J VAC SCI A, 18(6), 2000, pp. 2728-2732

Authors: Goullet, A Vallee, C Granier, A Turban, G
Citation: A. Goullet et al., Optical spectroscopic analyses of OH incorporation into SiO2 films deposited from O-2/tetraethoxysilane plasmas, J VAC SCI A, 18(5), 2000, pp. 2452-2458

Authors: Rhallabi, A Houlet, L Turban, G
Citation: A. Rhallabi et al., Estimation of surface kinetic parameters and two-dimensional simulation ofInP pattern features during CH4-H-2 plasma etching, J VAC SCI A, 18(4), 2000, pp. 1366-1372

Authors: Hong, JG Granier, A Leteinturier, C Peignon, MC Turban, G
Citation: Jg. Hong et al., Measurements of rf bias effect in a dual electron cyclotron resonance-rf methane plasma using the Langmuir probe method, J VAC SCI A, 18(2), 2000, pp. 497-502

Authors: Tessier, PY N'guessan, RK Angleraud, B Fernandez, V Mubumbila, N Turban, G
Citation: Py. Tessier et al., Carbon nitride thin films deposited by reactive plasma beam sputtering, SURF COAT, 125(1-3), 2000, pp. 295-300

Authors: Rolland, L Peignon, MC Cardinaud, C Turban, G
Citation: L. Rolland et al., SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer, MICROEL ENG, 53(1-4), 2000, pp. 375-379

Authors: Gaboriau, F Peignon, MC Barreau, A Turban, G Cardinaud, C Pfeiffer, K Bleidiessel, G Grutzner, G
Citation: F. Gaboriau et al., High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography, MICROEL ENG, 53(1-4), 2000, pp. 501-505

Authors: Le Brizoual, L Guilet, S Lemperiere, G Granier, A Coulon, N Lancin, M Turban, G
Citation: L. Le Brizoual et al., Analysis of Ti-Si-N diffusion barrier films obtained by r.f. magnetron sputtering, MICROEL ENG, 50(1-4), 2000, pp. 509-513

Authors: Hong, JG Goullet, A Turban, G
Citation: Jg. Hong et al., Optical characterization of hydrogenated amorphous carbon (a-C : H) thin films deposited from methane plasma, THIN SOL FI, 364(1-2), 2000, pp. 144-149

Authors: Aumaille, K Vallee, C Granier, A Goullet, A Gaboriau, F Turban, G
Citation: K. Aumaille et al., A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor, THIN SOL FI, 359(2), 2000, pp. 188-196

Authors: Hong, JG Lee, S Cardinaud, C Turban, G
Citation: Jg. Hong et al., Electronic and optical investigation of hydrogenated amorphous carbon (a-C: H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry, J NON-CRYST, 265(1-2), 2000, pp. 125-132

Authors: Gogolides, E Vauvert, P Kokkoris, G Turban, G Boudouvis, AG
Citation: E. Gogolides et al., Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition, J APPL PHYS, 88(10), 2000, pp. 5570-5584

Authors: Bhattacharyya, S Vallee, C Cardinaud, C Turban, G
Citation: S. Bhattacharyya et al., Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma, J APPL PHYS, 87(10), 2000, pp. 7524-7532

Authors: Houlet, L Rhallabi, A Turban, G
Citation: L. Houlet et al., Simulation of mesa structures for III-V semiconductors under ion beam etching, EPJ-APPL PH, 6(3), 1999, pp. 273-280

Authors: Racine, B Benlahsen, M Zellama, K Zarrabian, M Villain, JP Turban, G
Citation: B. Racine et al., Mechanical and tribological properties of diamond-like carbon coatings films deposited from an electron cyclotron resonance plasma, DIAM RELAT, 8(2-5), 1999, pp. 567-571

Authors: Hong, JG Turban, G
Citation: Jg. Hong et G. Turban, Etching process of hydrogenated amorphous carbon (a-C : H) thin films in adual ECR-r.f. nitrogen plasma, DIAM RELAT, 8(2-5), 1999, pp. 572-576

Authors: Bhattacharyya, S Vallee, C Cardinaud, C Turban, G
Citation: S. Bhattacharyya et al., Studies on structural properties of a-CN : H films prepared in electron cyclotron resonance plasma, DIAM RELAT, 8(2-5), 1999, pp. 586-590
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