Results: 1-6 |
Results: 6

Authors: Wen, TC Lee, SC Lee, WI Chen, TY Chan, SH Tsang, JS
Citation: Tc. Wen et al., Activation of p-type GaN in a pure oxygen ambient, JPN J A P 2, 40(5B), 2001, pp. L495-L497

Authors: Shoemaker, DD Schadt, EE Armour, CD He, YD Garrett-Engele, P McDonagh, PD Loerch, PM Leonardson, A Lum, PY Cavet, G Wu, LF Altschuler, SJ Edwards, S King, J Tsang, JS Schimmack, G Schelter, JM Koch, J Ziman, M Marton, MJ Li, B Cundiff, P Ward, T Castle, J Krolewski, M Meyer, MR Mao, M Burchard, J Kidd, MJ Dai, H Phillips, JW Linsley, PS Stoughton, R Scherer, S Boguski, MS
Citation: Dd. Shoemaker et al., Experimental annotation of the human genome using microarray technology, NATURE, 409(6822), 2001, pp. 922

Authors: Lai, WC Yokoyama, M Chang, SJ Guo, JD Sheu, CH Chen, TY Tsai, WC Tsang, JS Chan, SH Sze, SM
Citation: Wc. Lai et al., Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film, JPN J A P 2, 39(11B), 2000, pp. L1138-L1140

Authors: Liu, DG Yang, WL Tsang, JS Chu, KW Shiau, MS Yang, SY Hung, YM
Citation: Dg. Liu et al., Anomalous diffusion of boron in silicon driven under the N2O ambient, IEEE ELEC D, 21(12), 2000, pp. 572-574

Authors: Lai, WC Yokoyama, M Tsai, CC Chang, CS Guo, JD Tsang, JS Chan, SH Chang, CY
Citation: Wc. Lai et al., Electrical properties of multiple high-dose Si implantation in p-GaN, JPN J A P 2, 38(7B), 1999, pp. L802-L804

Authors: Lai, WC Yokoyama, M Tsai, CC Chang, CS Guo, JD Tsang, JS Chan, SH
Citation: Wc. Lai et al., Electrical properties of the Si implantation in Mg doped p-GaN, PHYS ST S-B, 216(1), 1999, pp. 561-565
Risultati: 1-6 |