Results: 1-24 |
Results: 24

Authors: Fernandez, S Naranjo, FB Calle, F Sanchez-Garcia, MA Calleja, E Vennegues, P Trampert, A Ploog, KH
Citation: S. Fernandez et al., MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs, SEMIC SCI T, 16(11), 2001, pp. 913-917

Authors: Braun, W Kaganer, VM Trampert, A Schonherr, HP Gong, Q Notzel, R Daweritz, L Ploog, KH
Citation: W. Braun et al., Diffusion and incorporation: shape evolution during overgrowth on structured substrates, J CRYST GR, 227, 2001, pp. 51-55

Authors: Waltereit, P Brandt, O Ramsteiner, M Trampert, A Grahn, HT Menniger, J Reiche, M Ploog, KH
Citation: P. Waltereit et al., M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields, J CRYST GR, 227, 2001, pp. 437-441

Authors: Daweritz, L Schippan, F Trampert, A Kastner, M Behme, G Wang, ZM Moreno, M Schutzendube, P Ploog, KH
Citation: L. Daweritz et al., MBE growth, structure and magnetic properties of MnAs on GaAs on a microscopic scale, J CRYST GR, 227, 2001, pp. 834-838

Authors: Santos, PV Trampert, A Dondeo, F Comedi, D Zhu, HJ Ploog, KH Zanatta, AR Chambouleyron, I
Citation: Pv. Santos et al., Epitaxial pulsed laser crystallization of amorphous germanium on GaAs, J APPL PHYS, 90(5), 2001, pp. 2575-2581

Authors: Fernandez, S Naranjo, FB Calle, F Sanchez-Garcia, MA Calleja, E Vennegues, P Trampert, A Ploog, KH
Citation: S. Fernandez et al., High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy, APPL PHYS L, 79(14), 2001, pp. 2136-2138

Authors: Ma, WQ Notzel, R Trampert, A Ramsteiner, M Zhu, HJ Schonherr, HP Ploog, KH
Citation: Wq. Ma et al., Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100), APPL PHYS L, 78(9), 2001, pp. 1297-1299

Authors: Trampert, A Schippan, F Daweritz, L Ploog, KH
Citation: A. Trampert et al., Phase-transition-induced residual strain in ferromagnetic MnAs films epitaxially grown on GaAs(001), APPL PHYS L, 78(17), 2001, pp. 2461-2463

Authors: Daweritz, L Wang, ZM Schippan, F Trampert, A Ploog, KH
Citation: L. Daweritz et al., In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth, MAT SCI E B, 75(2-3), 2000, pp. 157-165

Authors: Trampert, A Ploog, KH
Citation: A. Trampert et Kh. Ploog, Heteroepitaxy of large-misfit systems: Role of coincidence lattice, CRYST RES T, 35(6-7), 2000, pp. 793-806

Authors: Thamm, A Brandt, O Ringling, J Trampert, A Ploog, KH Mayrock, O Wunsche, HJ Henneberger, F
Citation: A. Thamm et al., Optical properties of heavily doped GaN/(Al,Ga)N multiple quantum wells grown on 6H-SiC(0001) by reactive molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 16025-16028

Authors: Thamm, A Brandt, O Trampert, A Ploog, KH
Citation: A. Thamm et al., Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 73-79

Authors: Waltereit, P Brandt, O Ramsteiner, M Trampert, A Grahn, HT Menniger, J Reiche, M Uecker, R Reiche, P Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides, PHYS ST S-A, 180(1), 2000, pp. 133-138

Authors: Waltereit, P Brandt, O Trampert, A Grahn, HT Menniger, J Ramsteiner, M Reiche, M Ploog, KH
Citation: P. Waltereit et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, NATURE, 406(6798), 2000, pp. 865-868

Authors: Schippan, F Trampert, A Daweritz, L Ploog, KH
Citation: F. Schippan et al., Kinetics of MnAs growth on GaAs(001) and interface structure, J VAC SCI B, 17(4), 1999, pp. 1716-1721

Authors: Brandt, O Mullhauser, JR Trampert, A Ploog, KH
Citation: O. Brandt et al., Properties of cubic (In,Ga)N grown by molecular beam epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 73-79

Authors: Trampert, A Brandt, O Yang, B Jenichen, B Ploog, KH
Citation: A. Trampert et al., Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE, J CRYST GR, 202, 1999, pp. 407-410

Authors: Schippan, F Trampert, A Daweritz, L Ploog, KH Dennis, B Neumann, KU Ziebeck, KRA
Citation: F. Schippan et al., Microstructure formation during MnAs growth on GaAs(001), J CRYST GR, 202, 1999, pp. 674-678

Authors: Thamm, A Brandt, O Takemura, Y Trampert, A Ploog, KH
Citation: A. Thamm et al., Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001), APPL PHYS L, 75(7), 1999, pp. 944-946

Authors: Brandt, O Muralidharan, R Waltereit, P Thamm, A Trampert, A von Kiedrowski, H Ploog, KH
Citation: O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021

Authors: Waltereit, P Brandt, O Trampert, A Ramsteiner, M Reiche, M Qi, M Ploog, KH
Citation: P. Waltereit et al., Influence of AlN nucleation layers on growth mode and strain relief of GaNgrown on 6H-SiC(0001), APPL PHYS L, 74(24), 1999, pp. 3660-3662

Authors: Trampert, A Brandt, O Ploog, KH
Citation: A. Trampert et al., Crystal structure of group III nitrides, SEM SEMIMET, 50, 1998, pp. 167-192

Authors: Mullhauser, JR Brandt, O Trampert, A Jenichen, B Ploog, KH
Citation: Jr. Mullhauser et al., Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(9), 1998, pp. 1230-1232

Authors: Yang, B Trampert, A Jenichen, B Brandt, O Ploog, KH
Citation: B. Yang et al., Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(26), 1998, pp. 3869-3871
Risultati: 1-24 |