Results: 1-5 |
Results: 5

Authors: Ayzenshtat, GI Tolbanov, OP Vorobiev, AP
Citation: Gi. Ayzenshtat et al., Modeling of processes of charge division and collection in GaAs detectors taking into account trapping effects, NUCL INST A, 466(1), 2001, pp. 1-8

Authors: Ayzenshtat, GI Bakin, NN Budnitsky, DL Drugova, EP Germogenov, VP Khludkov, SS Koretskaya, OB Okaevich, LS Porokhovnichenko, LP Potapov, AI Smith, KM Tolbanov, OP Tyazhev, AV Vilisova, MD Vorobiev, AP
Citation: Gi. Ayzenshtat et al., GaAs structures for X-ray imaging detectors, NUCL INST A, 466(1), 2001, pp. 25-32

Authors: Budnitsky, DL Germogenov, VP Guschin, SM Larionov, AA Porokhovnichenko, LP Potapov, AI Tolbanov, OP Vorobiev, AP
Citation: Dl. Budnitsky et al., Epitaxial structures based on compensated GaAs for gamma- and X-ray detectors, NUCL INST A, 466(1), 2001, pp. 33-38

Authors: Ayzenshtat, GI Kanaeva, VG Khan, AV Potapov, AI Porokhovnichenko, LP Tolbanov, OP Vorobiev, AP
Citation: Gi. Ayzenshtat et al., GaAs X-ray coordinate detectors, NUCL INST A, 466(1), 2001, pp. 162-167

Authors: Aizenshtadt, GI Kanaev, VG Khan, AV Khludkov, SS Koretskaya, OB Potapov, AI Okaevich, LS Tyazhev, AV Tolbanov, OP
Citation: Gi. Aizenshtadt et al., Ionizing-radiation detectors based on GaAs with deep centers, NUCL INST A, 448(1-2), 2000, pp. 188-191
Risultati: 1-5 |