Results: 1-21 |
Results: 21

Authors: Wang, CL Irie, M Kimura, K Teraji, T Ito, T
Citation: Cl. Wang et al., Boron-doped diamond film homoepitaxially grown on high-quality chemical-vapor-deposited diamond (100), JPN J A P 1, 40(6A), 2001, pp. 4145-4148

Authors: Watanabe, T Irie, M Teraji, T Ito, T Kamakura, Y Taniguchi, K
Citation: T. Watanabe et al., Impact excitation of carriers in diamond under extremely high electric fields, JPN J A P 2, 40(7B), 2001, pp. L715-L717

Authors: Teraji, T Wang, CL Endo, S Ito, T
Citation: T. Teraji et al., Improvement in fabrication processes for electronic devices of homoepitaxial diamond films, NEW DIAM FR, 11(5), 2001, pp. 313-324

Authors: Wang, CL Kimura, K Irie, M Teraji, T Ito, T
Citation: Cl. Wang et al., Cathodoluminescence characterization of high-quality homoepitaxial diamondfilms, NEW DIAM FR, 11(5), 2001, pp. 347-353

Authors: Haenen, K Meykens, K Nesladek, M Knuyt, G Stals, LM Teraji, T Koizumi, S Gheeraert, E
Citation: K. Haenen et al., Phonon-assisted electronic transitions in phosphorus-doped n-type chemicalvapor deposition diamond films, DIAM RELAT, 10(3-7), 2001, pp. 439-443

Authors: Gheeraert, E Casanova, N Koizumi, S Teraji, T Kanda, H
Citation: E. Gheeraert et al., Low temperature excitation spectrum of phosphorus in diamond, DIAM RELAT, 10(3-7), 2001, pp. 444-448

Authors: Casanova, N Gheeraert, E Bustarret, E Koizumi, S Teraji, T Kanda, H Zeman, J
Citation: N. Casanova et al., Effect of magnetic field on phosphorus centre in diamond, PHYS ST S-A, 186(2), 2001, pp. 291-295

Authors: Hasegawa, M Teraji, T Koizumi, S
Citation: M. Hasegawa et al., Lattice location of phosphorus in n-type homoepitaxial diamond films grownby chemical-vapor deposition, APPL PHYS L, 79(19), 2001, pp. 3068-3070

Authors: Watanabe, M Funayama, T Teraji, T Sakamaki, N
Citation: M. Watanabe et al., Ca(F)2/CdF2 double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio, JPN J A P 2, 39(7B), 2000, pp. L716-L719

Authors: Koizumi, S Teraji, T Kanda, H
Citation: S. Koizumi et al., Phosphorus-doped chemical vapor deposition of diamond, DIAM RELAT, 9(3-6), 2000, pp. 935-940

Authors: Gheeraert, E Koizumi, S Teraji, T Kanda, H Nesladek, M
Citation: E. Gheeraert et al., Electronic states of phosphorus in diamond, DIAM RELAT, 9(3-6), 2000, pp. 948-951

Authors: Haenen, K Meykens, K Nesladek, M Knuyt, G Stals, LM Teraji, T Koizumi, S Gheeraert, E
Citation: K. Haenen et al., Temperature dependent spectroscopic study of the electronic structure of phosphorus in n-type CVD diamond films, DIAM RELAT, 9(3-6), 2000, pp. 952-955

Authors: Gheeraert, E Koizumi, S Teraji, T Kanda, H
Citation: E. Gheeraert et al., Electronic transitions of electrons bound to phosphorus donors in diamond, SOL ST COMM, 113(10), 2000, pp. 577-580

Authors: Haenen, K Meykens, K Nesladek, M Knuyt, G Stals, LM Teraji, T Koizumi, S
Citation: K. Haenen et al., The electronic structure of phosphorus in n-type CVD diamond films: Revised, PHYS ST S-A, 181(1), 2000, pp. 11-16

Authors: Teraji, T Koizumi, S Kanda, H
Citation: T. Teraji et al., Ohmic contacts for phosphorus-doped n-type diamond, PHYS ST S-A, 181(1), 2000, pp. 129-139

Authors: Teraji, T Koizumi, S Kanda, H
Citation: T. Teraji et al., Ga Ohmic contact for n-type diamond by ion implantation, APPL PHYS L, 76(10), 2000, pp. 1303-1305

Authors: Teraji, T Koizumi, S Mita, S Sawabe, A Kanda, H
Citation: T. Teraji et al., Electrical contacts for n-type diamond, JPN J A P 2, 38(10A), 1999, pp. L1096-L1098

Authors: Nesladek, M Meykens, K Haenen, K Stals, LM Teraji, T Koizumi, S
Citation: M. Nesladek et al., Photocurrent and optical absorption spectroscopic study of n-type phosphorus-doped CVD diamond, DIAM RELAT, 8(2-5), 1999, pp. 882-885

Authors: Nesladek, M Meykens, K Haenen, K Stals, LM Teraji, T Koizumi, S
Citation: M. Nesladek et al., Low-temperature spectroscopic study of n-type diamond, PHYS REV B, 59(23), 1999, pp. 14852-14855

Authors: Haenen, K Meykens, K Nesladek, M Stals, LM Teraji, T Koizumi, S Gheeraert, E
Citation: K. Haenen et al., Study of the electronic structure of the phosphorus level in n-type CVD diamond, PHYS ST S-A, 174(1), 1999, pp. R1-R2

Authors: Gheeraert, E Kozumi, S Teraji, T Kanda, H Nesladek, M
Citation: E. Gheeraert et al., Electronic states of boron and phosphorus in diamond, PHYS ST S-A, 174(1), 1999, pp. 39-51
Risultati: 1-21 |