Results: 1-25 | 26-50 | 51-59
Results: 1-25/59

Authors: Kobayashi, Y Hayashi, N Tan, CH Kishi, Y
Citation: Y. Kobayashi et al., Toward the creation of NMR databases in chiral solvents for assignments ofrelative and absolute stereochemistry: Proof of concept, ORG LETT, 3(14), 2001, pp. 2245-2248

Authors: Fan, MH Gerung, H Yelehanka, PR Cheng, A Zhou, MS Chi, C Tan, CH Xie, J
Citation: Mh. Fan et al., Critical dimension control optimization methodology on shallow trench isolation substrate for sub-0.25 mu m technology gate patterning, J VAC SCI B, 19(2), 2001, pp. 456-460

Authors: Tan, CH Lu, ZQ Tao, ZY
Citation: Ch. Tan et al., Finite-form acoustical reconstruction algorithm for scatterers of absorbing type and its computer simulations, PROG NAT SC, 11, 2001, pp. S106-S109

Authors: Tao, ZY Lu, ZQ Tan, CH
Citation: Zy. Tao et al., Acoustical tomography based on the second-order Rytov transform perturbation approximation, PROG NAT SC, 11, 2001, pp. S114-S117

Authors: Tan, CH Holmes, AB
Citation: Ch. Tan et Ab. Holmes, The synthesis of (+)-allopumiliotoxin 323B ', CHEM-EUR J, 7(9), 2001, pp. 1845-1854

Authors: Inigo, AR Tan, CH Fann, W Huang, YS Perng, GY Chen, SA
Citation: Ar. Inigo et al., Non-dispersive hole transport in a soluble poly(p-phenylene vinylene), ADVAN MATER, 13(7), 2001, pp. 504

Authors: Lu, ZQ Tan, CH Tao, ZY Xue, Q
Citation: Zq. Lu et al., Acoustical diffraction tomography in a finite form and its computer simulations, IEEE ULTRAS, 48(4), 2001, pp. 969-975

Authors: Yi, X Tan, CH Siew, CK Syed, MR
Citation: X. Yi et al., Fast encryption for multimedia, IEEE CONS E, 47(1), 2001, pp. 101-107

Authors: Mao, LF Zhang, HQ Wei, JL Mu, FC Tan, CH Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(7), 2001, pp. 1081-1084

Authors: Mao, LF Tan, CH Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(5), 2001, pp. 773-776

Authors: Mu, FC Mao, LF Wei, JL Tan, CH Xu, MZ
Citation: Fc. Mu et al., An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode, SOL ST ELEC, 45(3), 2001, pp. 385-389

Authors: Mu, FC Xu, MZ Tan, CH
Citation: Fc. Mu et al., A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes, SOL ST ELEC, 45(3), 2001, pp. 435-439

Authors: Mao, LF Tan, CH Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs, SOL ST ELEC, 45(3), 2001, pp. 531-534

Authors: Mao, LF Tan, CH Xu, MZ
Citation: Lf. Mao et al., Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current, SOL ST COMM, 119(2), 2001, pp. 67-71

Authors: Xu, MZ Tan, CH Mao, LF
Citation: Mz. Xu et al., The double level calculation of oxygen related donor states in Si and SiO2, SOL ST COMM, 117(6), 2001, pp. 365-367

Authors: Mao, LF Tan, CH Xu, MZ
Citation: Lf. Mao et al., The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures, MICROEL REL, 41(6), 2001, pp. 927-931

Authors: Mao, LF Yang, Y Wei, JL Zhang, HQ Xu, MZ Tan, CH
Citation: Lf. Mao et al., Effect of SiO2/Si interface roughness on gate current, MICROEL REL, 41(11), 2001, pp. 1903-1907

Authors: Mu, FC Xu, MZ Tan, CH Duan, XR
Citation: Fc. Mu et al., A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d, MICROEL REL, 41(11), 2001, pp. 1909-1913

Authors: Mu, FC Tan, CH Xu, MZ
Citation: Fc. Mu et al., Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions, MICROEL REL, 41(1), 2001, pp. 129-131

Authors: Yang, CY Wang, Z Tan, CH Xu, MZ
Citation: Cy. Yang et al., The degradation of p-MOSFETs under off-state stress, MICROELEC J, 32(7), 2001, pp. 587-591

Authors: Tan, CH Inigo, AR Hsu, JH Fann, W Wei, PK
Citation: Ch. Tan et al., Mesoscale structures in luminescent conjugated polymer thin films studied by near-field scanning optical microscopy, J PHYS CH S, 62(9-10), 2001, pp. 1643-1654

Authors: Tan, CH David, JPR Rees, GJ Tozer, RC Herbert, DC
Citation: Ch. Tan et al., Treatment of soft threshold in impact ionization, J APPL PHYS, 90(5), 2001, pp. 2538-2543

Authors: Xu, MZ Tan, CH Yang, CY Xie, B
Citation: Mz. Xu et al., Investigation of the proportional difference characteristics of MOSFETs, INT J ELECT, 88(4), 2001, pp. 383-393

Authors: Tan, CH David, JPR Plimmer, SA Rees, GJ Tozer, RC Grey, R
Citation: Ch. Tan et al., Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes, IEEE DEVICE, 48(7), 2001, pp. 1310-1317

Authors: Tan, EC Chong, SA Mahendran, R Dong, F Tan, CH
Citation: Ec. Tan et al., Susceptibility to neuroleptic-induced tardive dyskinesia and the T102C polymorphism in the serotonin type 2A receptor, BIOL PSYCHI, 50(2), 2001, pp. 144-147
Risultati: 1-25 | 26-50 | 51-59