Citation: Wt. Taferner et al., THE INVESTIGATION OF GAN GROWTH ON SILICON AND SAPPHIRE USING IN-SITUTIME-OF-FLIGHT LOW-ENERGY ION-SCATTERING AND RHEED, Journal of crystal growth, 164(1-4), 1996, pp. 167-174
Citation: A. Bensaoula et al., THE NITRIDATION OF GAAS AND GAN DEPOSITION ON GAAS EXAMINED BY IN-SITU TIME-OF-FLIGHT LOW-ENERGY ION-SCATTERING AND RHEED, Journal of crystal growth, 164(1-4), 1996, pp. 185-189
Authors:
TAFERNER WT
FREUNDLICH A
BENSAOULA A
IGNATIEV A
WATERS K
EIPERSSMITH K
GUEHENNEUC M
SCHULTZ JA
Citation: Wt. Taferner et al., IN-SITU OBSERVATIONS OF GE(001) AND GE SI(001) USING LOW-ENERGY ION-SCATTERING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3012-3017