Results: 1-25 | 26-26
Results: 1-25/26

Authors: Chang, TC Liu, PT Tsai, TM Yeh, FS Tseng, TY Tsai, MS Chen, BC Yang, YL Sze, SM
Citation: Tc. Chang et al., Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane, JPN J A P 1, 40(5A), 2001, pp. 3143-3146

Authors: Liu, PT Chang, TC Huang, MC Tsai, MS Sze, SM
Citation: Pt. Liu et al., Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane, J VAC SCI B, 19(4), 2001, pp. 1212-1218

Authors: Lee, MK Chu, CH Wang, YH Sze, SM
Citation: Mk. Lee et al., 1.55-mu m and infrared-band photoresponsivity of a Schottky barrier poroussilicon photodetector, OPTICS LETT, 26(3), 2001, pp. 160-162

Authors: Li, YM Voskoboynikov, O Lee, CP Sze, SM
Citation: Ym. Li et al., Energy and coordinate dependent effective mass and confined electron states in quantum dots, SOL ST COMM, 120(2-3), 2001, pp. 79-83

Authors: Horng, RH Wuu, DS Kung, CY Lin, JC Leu, CC Huang, TY Sze, SM
Citation: Rh. Horng et al., Ion-implanted treatment of (Ba, Sr)TiO3 films for DRAM applications, J NON-CRYST, 280(1-3), 2001, pp. 48-53

Authors: Li, YM Voskoboynikov, O Lee, CP Sze, SM Tretyak, O
Citation: Ym. Li et al., Electron energy state dependence on the shape and size of semiconductor quantum dots, J APPL PHYS, 90(12), 2001, pp. 6416-6420

Authors: Liu, PT Chang, TC Su, H Mor, YS Yang, YL Chung, H Hou, J Sze, SM
Citation: Pt. Liu et al., Improvement in integration issues for organic low-k hybrid-organic-siloxane-polymer, J ELCHEM SO, 148(2), 2001, pp. F30-F34

Authors: Li, YM Voskoboynikov, O Lee, CP Sze, SM
Citation: Ym. Li et al., Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots, COMP PHYS C, 141(1), 2001, pp. 66-72

Authors: Li, YM Liu, JL Voskoboynikov, O Lee, CP Sze, SM
Citation: Ym. Li et al., Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot, COMP PHYS C, 140(3), 2001, pp. 399-404

Authors: Horng, RH Wuu, DS Kung, CY Lin, CC Leu, CC Haung, TY Sze, SM
Citation: Rh. Horng et al., Ion-implantation treatment (Ba, Sr)TiO3 thin films, JPN J A P 1, 39(12A), 2000, pp. 6614-6618

Authors: Chang, TC Liu, PT Yang, YL Hu, JC Sze, SM
Citation: Tc. Chang et al., Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure, JPN J A P 2, 39(2A), 2000, pp. L82-L85

Authors: Lai, WC Yokoyama, M Chang, SJ Guo, JD Sheu, CH Chen, TY Tsai, WC Tsang, JS Chan, SH Sze, SM
Citation: Wc. Lai et al., Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film, JPN J A P 2, 39(11B), 2000, pp. L1138-L1140

Authors: Wuu, DS Horng, RH Liao, FC Leu, CC Huang, TY Sze, SM Chen, HY Chang, CY
Citation: Ds. Wuu et al., Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films, MICROEL REL, 40(4-5), 2000, pp. 663-666

Authors: Horng, RH Wuu, DS Leu, CC Chan, SH Huang, TY Sze, SM
Citation: Rh. Horng et al., Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films, MICROEL REL, 40(4-5), 2000, pp. 667-670

Authors: Leu, CC Chan, SH Chen, HY Horng, RH Wuu, DS Wu, LH Huang, TY Chang, CY Sze, SM
Citation: Cc. Leu et al., Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films, MICROEL REL, 40(4-5), 2000, pp. 679-682

Authors: Liu, PT Chang, TC Yang, YL Cheng, YF Sze, SM
Citation: Pt. Liu et al., Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects, IEEE DEVICE, 47(9), 2000, pp. 1733-1739

Authors: Liu, PT Chang, TC Yang, YL Cheng, YF Lee, JK Shih, FY Tsai, E Chen, G Sze, SM
Citation: Pt. Liu et al., Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment, J ELCHEM SO, 147(3), 2000, pp. 1186-1192

Authors: Liu, PT Chang, TC Huang, MC Yang, YL Mor, YS Tsai, MS Chung, H Hou, J Sze, SM
Citation: Pt. Liu et al., Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric, J ELCHEM SO, 147(11), 2000, pp. 4313-4317

Authors: Liu, PT Chang, TC Hu, JC Yang, YL Sze, SM
Citation: Pt. Liu et al., Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization, J ELCHEM SO, 147(1), 2000, pp. 368-372

Authors: Liu, PT Chang, TC Mor, YS Sze, SM
Citation: Pt. Liu et al., Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatment, JPN J A P 1, 38(6A), 1999, pp. 3482-3486

Authors: Liu, PT Chang, TC Yang, YL Cheng, YF Shih, FY Lee, JK Tsai, E Sze, SM
Citation: Pt. Liu et al., Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface, JPN J A P 1, 38(11), 1999, pp. 6247-6252

Authors: Chang, TC Liu, PT Shih, FY Sze, SM
Citation: Tc. Chang et al., Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes, EL SOLID ST, 2(8), 1999, pp. 390-392

Authors: Chang, TC Liu, PT Mei, YJ Mor, YS Perng, TH Yang, YL Sze, SM
Citation: Tc. Chang et al., Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane, J VAC SCI B, 17(5), 1999, pp. 2325-2330

Authors: Chang, TC Mor, YS Liu, PT Sze, SM Yang, YL Tsai, MS Chang, CY
Citation: Tc. Chang et al., The novel precleaning treatment for selective tungsten chemical vapor deposition, THIN SOL FI, 356, 1999, pp. 451-455

Authors: Horng, RN Wuu, DS Wu, LH Wei, SC Chan, SH Leu, CC Huang, TY Sze, SM Lee, MK
Citation: Rn. Horng et al., Co-sputtered Ru-Ti alloy electrodes for DRAM applications, THIN SOL FI, 344, 1999, pp. 598-601
Risultati: 1-25 | 26-26