Results: 1-9 |
Results: 9

Authors: Nam, IH Hong, SI Sim, JS Park, BG Lee, JD Lee, SW Kang, MS Kim, YW Suh, KP Lee, WS
Citation: Ih. Nam et al., Nitrogen profile effects on the growth rate of gate oxides grown on nitrogen-implanted silicon, J VAC SCI B, 19(1), 2001, pp. 299-304

Authors: Cheng, KG Lee, JJ Lyding, JW Kim, YK Kim, YW Suh, KP
Citation: Kg. Cheng et al., Separation of hot-carrier-induced interface trap creation and oxide chargetrapping in PMOSFETs studied by hydrogen/deuterium isotope effect, IEEE ELEC D, 22(4), 2001, pp. 188-190

Authors: Cheng, KG Lee, J Chen, Z Shah, S Hess, K Lyding, JW Kim, YK Kim, YW Suh, KP
Citation: Kg. Cheng et al., Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices, MICROEL ENG, 56(3-4), 2001, pp. 353-358

Authors: Nam, IH Sim, JS Hong, SI Park, BG Lee, JD Lee, SW Kang, MS Kim, YW Suh, KP Lee, WS
Citation: Ih. Nam et al., Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors, IEEE DEVICE, 48(10), 2001, pp. 2310-2316

Authors: Kim, HS Ahn, JH Lee, DM Yoo, KD Lee, SC Suh, KP
Citation: Hs. Kim et al., Device performance improvement based on transient enhanced diffusion suppression in the deep sub-quarter micron scale, JPN J A P 1, 39(4B), 2000, pp. 2172-2176

Authors: Lee, JJ Cheng, KG Chen, Z Hess, K Lyding, JW Kim, YK Lee, HS Kim, YW Suh, KP
Citation: Jj. Lee et al., Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors, IEEE ELEC D, 21(5), 2000, pp. 221-223

Authors: Lee, SW Lee, YH Kim, YW Suh, KP
Citation: Sw. Lee et al., Reverse short channel effect by transient enhanced diffusion for 0.15 mu mnMOSFET, J KOR PHYS, 35, 1999, pp. S820-S824

Authors: Hess, K Lee, JJ Chen, Z Lyding, JW Kim, YK Kim, BS Lee, YH Kim, YW Suh, KP
Citation: K. Hess et al., An alternative interpretation of hot electron interface degradation in NMOSFETs: Isotope results irreconcilable with major defect generation by holes?, IEEE DEVICE, 46(9), 1999, pp. 1914-1916

Authors: Park, SB Kim, YU Ko, YG Kim, KI Kim, IK Kang, HS Yu, JO Suh, KP
Citation: Sb. Park et al., A 0.25-mu m 600-MHz, 1.5-V, fully depleted SOICMOS 64-bit microprocessor, IEEE J SOLI, 34(11), 1999, pp. 1436-1445
Risultati: 1-9 |