Results: 1-25 | 26-35
Results: 1-25/35

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., Selective growth of highly packed array of ZnCdS quantum dots with a mask prepared by atomic force microscope nanolithography, JPN J A P 1, 40(3B), 2001, pp. 1899-1901

Authors: Ok, YW Choi, CJ Seong, TY Uesugi, K Suemune, I
Citation: Yw. Ok et al., Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 900-906

Authors: Ashrafi, ABMA Kumano, H Suemune, I Ok, YW Seong, TY
Citation: Abma. Ashrafi et al., Single-crystalline rocksalt CdO layers grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy, APPL PHYS L, 79(4), 2001, pp. 470-472

Authors: Uesugi, K Suemune, I
Citation: K. Uesugi et I. Suemune, Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties, APPL PHYS L, 79(20), 2001, pp. 3284-3286

Authors: Yamada, S Kato, J Tanaka, S Suemune, I Avramescu, A Aoyagi, Y Teraguchi, N Suzuki, A
Citation: S. Yamada et al., Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, APPL PHYS L, 78(23), 2001, pp. 3612-3614

Authors: Kumano, H Nashiki, H Suemune, I Suzuki, H Uesugi, K He, AQ Otsuka, N
Citation: H. Kumano et al., Intrinsic and extrinsic excitonic features in MgS/ZnSe superlattices revealed by microspectroscopy, JPN J A P 1, 39(2A), 2000, pp. 501-504

Authors: Tawara, T Tanaka, S Kumano, H Suemune, I
Citation: T. Tawara et al., Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers, J ELEC MAT, 29(5), 2000, pp. 515-519

Authors: Ueta, A Shimozawa, T Avramescu, A Suemune, I Machida, H Shimoyama, N
Citation: A. Ueta et al., Growth mechanism of selectively grown II-VI semiconductor photonic dots for short-wavelength light emitters, J CRYST GR, 221, 2000, pp. 425-430

Authors: Ashrafi, AA Ueta, A Kumano, H Suemune, I
Citation: Aa. Ashrafi et al., Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 435-439

Authors: Suemune, I Morooka, N Uesugi, K Ok, YW Seong, TY
Citation: I. Suemune et al., Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 546-550

Authors: Tawara, T Yoshida, H Yogo, T Tanaka, S Suemune, I
Citation: T. Tawara et al., Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE, J CRYST GR, 221, 2000, pp. 699-703

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., New type of ZnCdS/ZnMgCdS heterostructures lattice-matched to GaAs for selective-area growth, J CRYST GR, 214, 2000, pp. 125-129

Authors: Kumano, H Ashrafi, AA Ueta, A Avramescu, A Suemune, I
Citation: H. Kumano et al., Luminescence properties of ZnO films grown on GaAs substrates by molecular-beam epitaxy excited by electron-cyclotron resonance oxygen plasma, J CRYST GR, 214, 2000, pp. 280-283

Authors: Hirose, J Suemune, I Ueta, A Machida, H Shimoyama, N
Citation: J. Hirose et al., Periodic doping of GaAs : Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy, J CRYST GR, 214, 2000, pp. 524-528

Authors: Suemune, I Ohsawa, H Tawara, T Machida, H Shimoyama, N
Citation: I. Suemune et al., Study of site change of Li impurities in ZnSe by co-doping with iodine, J CRYST GR, 214, 2000, pp. 562-566

Authors: Tawara, T Suemune, I Tanaka, S
Citation: T. Tawara et al., MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast, J CRYST GR, 214, 2000, pp. 1019-1023

Authors: Ueta, A Avramescu, A Suemune, I Machida, H Shimoyama, N
Citation: A. Ueta et al., Enhancement of spontaneous emission by ZnS-based II-VI semiconductor photonic dots, J CRYST GR, 214, 2000, pp. 1024-1028

Authors: Suemune, I Ishibashi, A
Citation: I. Suemune et A. Ishibashi, II-VI Compounds 1999 - Proceedings of the Ninth International Conference on II-VI Compounds - Kyoto, Japan, 1-5 November 1999 - Editor's preface, J CRYST GR, 214, 2000, pp. XI-XI

Authors: Shen, XQ Ramvall, P Riblet, P Aoyagi, Y Hosi, K Tanaka, S Suemune, I
Citation: Xq. Shen et al., Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 396-400

Authors: Ueta, A Avramescu, A Suemune, I Machida, H Shimoyama, N
Citation: A. Ueta et al., Fabrication of selectively grown II-VI widegap semiconductor photonic dotson (001)GaAs with MOMBE, J CRYST GR, 209(2-3), 2000, pp. 518-521

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., Atomic force microscope based patterning of carbonaceous masks for selective area growth on semiconductor surfaces, J APPL PHYS, 88(6), 2000, pp. 3158-3165

Authors: Suemune, I Uesugi, K Walukiewicz, W
Citation: I. Suemune et al., Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs, APPL PHYS L, 77(19), 2000, pp. 3021-3023

Authors: Ashrafi, ABMA Ueta, A Avramescu, A Kumano, H Suemune, I Ok, YW Seong, TY
Citation: Abma. Ashrafi et al., Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers, APPL PHYS L, 76(5), 2000, pp. 550-552

Authors: Suemune, I Hirose, J Ueta, A
Citation: I. Suemune et al., Hole activation from GaAs : Zn nanoclusters for p-type conduction in ZnSe, APPL PHYS L, 76(13), 2000, pp. 1701-1703

Authors: Uesugi, K Suemune, I Hasegawa, T Akutagawa, T Nakamura, T
Citation: K. Uesugi et al., Temperature dependence of band gap energies of GaAsN alloys, APPL PHYS L, 76(10), 2000, pp. 1285-1287
Risultati: 1-25 | 26-35