Authors: Kato, M Sobue, F Ichimura, M Arai, E Yamada, N Tokuda, Y Okumura, T

Citation: M. Kato et al., Passivation of deep levels in 3C-SiC on Si by a hydrogen plasma treatment, JPN J A P 1, 40(4B), 2001, pp. 2983-2986