Results: 1-25 | 26-50 | 51-56
Results: 1-25/56

Authors: Choi, CJ Seong, TY Lee, KM Lee, JH Park, YJ Lee, HD
Citation: Cj. Choi et al., Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes, EL SOLID ST, 4(11), 2001, pp. G88-G90

Authors: Kim, HK Ok, YW Seong, TY Jeon, EJ Cho, W Yoon, YS
Citation: Hk. Kim et al., Microstructures and electrochemical properties of Pt-doped amorphous V2O5 cathode films for thin film microbatteries, J VAC SCI A, 19(5), 2001, pp. 2549-2553

Authors: Kim, HK Seong, TY Lim, JH Cho, WI Yoon, YS
Citation: Hk. Kim et al., Electrochemical and structural properties of radio frequency sputtered cobalt oxide electrodes for thin-film supercapacitors, J POWER SOU, 102(1-2), 2001, pp. 167-171

Authors: Ok, YW Choi, CJ Seong, TY Uesugi, K Suemune, I
Citation: Yw. Ok et al., Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 900-906

Authors: Kim, HK Seong, TY Lee, CR
Citation: Hk. Kim et al., Thermally stable Nb and Nb/Au ohmic contacts to p-GaN, J ELEC MAT, 30(3), 2001, pp. 266-270

Authors: Jang, JS Kim, DJ Park, SJ Seong, TY
Citation: Js. Jang et al., Electrical characteristics of thermally stable Ru and Ru/Au ohmic contactsto surface-treated p-type GaN, J ELEC MAT, 30(2), 2001, pp. 94-98

Authors: Song, JD Ok, YW Kima, JM Lee, YT Seong, TY
Citation: Jd. Song et al., Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy, APPL SURF S, 183(1-2), 2001, pp. 33-38

Authors: Kim, DG Seong, TY Baik, YJ
Citation: Dg. Kim et al., Oxidation behavior of TiN/AlN multilayer films prepared by ion beam-assisted deposition, THIN SOL FI, 397(1-2), 2001, pp. 203-207

Authors: Park, NM Choi, CJ Seong, TY Park, SJ
Citation: Nm. Park et al., Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride, PHYS REV L, 86(7), 2001, pp. 1355-1357

Authors: Lee, RT Fetzer, CM Jun, SW Chapman, DC Shurtleff, JK Stringfellow, GB Ok, YW Seong, TY
Citation: Rt. Lee et al., Enhancement of compositional modulation in GaInP epilayers by the additionof surfactants during organometallic vapor phase epitaxy growth, J CRYST GR, 233(3), 2001, pp. 490-502

Authors: Song, JD Ok, YW Kim, JM Lee, YT Seong, TY
Citation: Jd. Song et al., Lateral composition modulation in GaP/InP short-period superlattices grownby solid source molecular beam epitaxy, J APPL PHYS, 90(10), 2001, pp. 5086-5089

Authors: Moon, YT Kim, DJ Song, KM Choi, CJ Han, SH Seong, TY Park, SJ
Citation: Yt. Moon et al., Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells, J APPL PHYS, 89(11), 2001, pp. 6514-6518

Authors: Kim, HK Han, SH Seong, TY Choi, WK
Citation: Hk. Kim et al., Electrical and structural properties of Ti/Au ohmic contacts to n-ZnO, J ELCHEM SO, 148(3), 2001, pp. G114-G117

Authors: Ashrafi, ABMA Kumano, H Suemune, I Ok, YW Seong, TY
Citation: Abma. Ashrafi et al., Single-crystalline rocksalt CdO layers grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy, APPL PHYS L, 79(4), 2001, pp. 470-472

Authors: Jeon, S Choi, CJ Seong, TY Hwang, H
Citation: S. Jeon et al., Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2, APPL PHYS L, 79(2), 2001, pp. 245-247

Authors: Sohn, JI Choi, CJ Lee, S Seong, TY
Citation: Ji. Sohn et al., Growth behavior of carbon nanotubes on Fe-deposited (001) Si substrates, APPL PHYS L, 78(20), 2001, pp. 3130-3132

Authors: Kim, MH Bang, YC Park, NM Choi, CJ Seong, TY Park, SJ
Citation: Mh. Kim et al., Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition, APPL PHYS L, 78(19), 2001, pp. 2858-2860

Authors: Fetzer, CM Lee, RT Jun, SW Stringfellow, GB Lee, SM Seong, TY
Citation: Cm. Fetzer et al., Sb enhancement of lateral superlattice formation in GaInP, APPL PHYS L, 78(10), 2001, pp. 1376-1378

Authors: Youn, DH Son, SJ Lee, YJ Hwang, SW Yang, JJ Lee, KJ Kim, JH Jo, JY Yoo, JB Choi, CJ Seong, TY
Citation: Dh. Youn et al., Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes, JPN J A P 1, 39(5A), 2000, pp. 2512-2515

Authors: Choi, GJ Spirydon, R Seong, TY Lee, SH Stringfellow, GB
Citation: Gj. Choi et al., Effects of Te doping on ordering and antiphase boundaries in GaInP, JPN J A P 1, 39(2A), 2000, pp. 402-406

Authors: Jang, JS Park, SJ Seong, TY
Citation: Js. Jang et al., High quality non-alloyed Pt ohmic contacts to P-type GaN using two-step surface treatment, MRS I J N S, 5, 2000, pp. NIL_448-NIL_453

Authors: Baek, SK Choi, CJ Seong, TY Hwang, H Moon, DW Kim, HK
Citation: Sk. Baek et al., Ultrashallow P+/N junction formation by plasma ion implantation, J KOR PHYS, 37(6), 2000, pp. 912-914

Authors: Stringfellow, GB Lee, RT Fetzer, CM Shurtleff, JK Hsu, Y Jun, SW Lee, S Seong, TY
Citation: Gb. Stringfellow et al., Surfactant effects of dopants on ordering in GaInP, J ELEC MAT, 29(1), 2000, pp. 134-139

Authors: Lee, SM Seong, TY Lee, RT Stringfellow, GB
Citation: Sm. Lee et al., Effects of Si doping on ordering and domain structures in GaInP, APPL SURF S, 158(3-4), 2000, pp. 223-228

Authors: Seong, TY Lee, SM Lee, RT Stringfellow, GB
Citation: Ty. Seong et al., Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy, SURF SCI, 457(1-2), 2000, pp. L381-L385
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