Results: 1-6 |
Results: 6

Authors: Seitz, R Gaspar, C Correia, M Monteiro, T Pereira, E Heuken, M Schoen, O
Citation: R. Seitz et al., Steady-state and time-resolved luminescence in InGaN layers, J LUMINESC, 87-9, 2000, pp. 1202-1205

Authors: Schoen, O Protzmann, H Rockenfeller, O Schineller, B Heuken, M Juergensen, H
Citation: O. Schoen et al., GaInN/GaN heterostructures grown in production scale MOVPE reactors, J PHYS IV, 9(P8), 1999, pp. 1035-1039

Authors: Karouta, F Jacobs, B Vreugdewater, P van Melick, NGH Schoen, O Protzmann, H Heuken, M
Citation: F. Karouta et al., High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN, EL SOLID ST, 2(5), 1999, pp. 240-241

Authors: Karouta, F Jacobs, B Schoen, O Heuken, M
Citation: F. Karouta et al., Chemical and complementary role of fluorine in a chlorine-based reactive ion etching of GaN, PHYS ST S-A, 176(1), 1999, pp. 755-758

Authors: Schwambera, M Schoen, O Schineller, B Schmitz, D Heuken, M
Citation: M. Schwambera et al., Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emitters, J CRYST GR, 203(3), 1999, pp. 340-348

Authors: Schoen, O Schwambera, M Schineller, B Schmitz, D Heuken, M Juergensen, H
Citation: O. Schoen et al., High quality III-nitride material grown in mass production MOCVD systems, J CRYST GR, 195(1-4), 1998, pp. 297-303
Risultati: 1-6 |