Results: 1-21 |
Results: 21

Authors: TSUCHIYA H SUNABA K MINAMI M SUEMASU T HASEGAWA F
Citation: H. Tsuchiya et al., INFLUENCE OF AS AUTODOPING FROM GAAS SUBSTRATES ON THICK CUBIC GAN GROWTH BY HALIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 37(5B), 1998, pp. 568-570

Authors: SUEMASU T TAKAKURA K TANAKA M FUJII T HASEGAWA F
Citation: T. Suemasu et al., MAGNETOTRANSPORT PROPERTIES OF A SINGLE-CRYSTALLINE BETA-FESI2 LAYER GROWN ON SI(001) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY, JPN J A P 2, 37(3B), 1998, pp. 333-335

Authors: YAGUCHI T YONEMURA S TSUCHIYA H SHIMOYAMA N SUEMASU T HASEGAWA F
Citation: T. Yaguchi et al., DEPENDENCE OF GAN MOMBE GROWTH ON NITROGEN-SOURCE - ECR PLASMA GUN STRUCTURE AND MONOMETHYL-HYDRAZINE, Journal of crystal growth, 190, 1998, pp. 380-384

Authors: TSUCHIYA H SUNABA K SUEMASU T HASEGAWA F
Citation: H. Tsuchiya et al., GROWTH CONDITION DEPENDENCE OF GAN CRYSTAL-STRUCTURE ON (001)GAAS BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 395-400

Authors: YONEMURA S YAGUCHI T TSUCHIYA H SHIMOYAMA N SUEMASU T HASEGAWA F
Citation: S. Yonemura et al., COMPARISON BETWEEN MONOMETHYL HYDRAZINE AND ECR PLASMA ACTIVATED NITROGEN AS A NITROGEN-SOURCE FOR CBE GROWTH OF GAN, Journal of crystal growth, 188(1-4), 1998, pp. 81-85

Authors: TANAKA M KUMAGAI Y SUEMASU T HASEGAWA F
Citation: M. Tanaka et al., FORMATION OF BETA-FESI2 LAYERS ON SI(001) SUBSTRATES, JPN J A P 1, 36(6A), 1997, pp. 3620-3624

Authors: SUEMASU T YAMAMOTO M TAKAKURA K HASHIMOTO S KUMAGAI Y HASEGAWA F
Citation: T. Suemasu et al., SI MOLECULAR-BEAM EPITAXIAL-GROWTH OVER AN ATOMIC-LAYER BORON ABSORBED SI(001) SUBSTRATE AND ITS ELECTRICAL-PROPERTIES, JPN J A P 1, 36(12A), 1997, pp. 7146-7151

Authors: SUEMASU T TANAKA M FUJII T HASHIMOTO S KUMAGAI Y HASEGAWA F
Citation: T. Suemasu et al., AGGREGATION OF MONOCRYSTALLINE BETA-FESI2 BY ANNEALING AND BY SI OVERLAYER GROWTH, JPN J A P 2, 36(9AB), 1997, pp. 1225-1228

Authors: TSUCHIYA H SUNABA K YONEMURA S SUEMASU T HASEGAWA F
Citation: H. Tsuchiya et al., CUBIC DOMINANT GAN GROWTH ON (001)GAAS SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 36(1AB), 1997, pp. 1-3

Authors: TANAKA M KUMAGAI Y SUEMASU T HASEGAWA F
Citation: M. Tanaka et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 LAYERS ON SI(001), Applied surface science, 117, 1997, pp. 303-307

Authors: YAMADA T TANAKA Y SUEMASU T KOHTOKU Y
Citation: T. Yamada et al., SYNTHESIS AND CHARACTERIZATION OF SIC-SI3N4 COMPOSITES BY DUAL IRRADIATION OF CO2 AND EXCIMER LASERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 378-382

Authors: MORI K SAITOH W SUEMASU T KOHNO Y WATANABE M ASADA M
Citation: K. Mori et al., ROOM-TEMPERATURE OBSERVATION OF MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE IN A METAL (COSI2) INSULATOR (CAF2) QUANTUM INTERFERENCE TRANSISTOR STRUCTURE/, Physica. B, Condensed matter, 227(1-4), 1996, pp. 213-215

Authors: SUEMASU T SAITOH W KHONO Y MORI K WATANABE M ASADA M
Citation: T. Suemasu et al., TRANSFER EFFICIENCY OF HOT-ELECTRONS IN A METAL(COSI2) INSULATOR(CAF2) QUANTUM INTERFERENCE TRANSISTOR/, Surface science, 362(1-3), 1996, pp. 209-212

Authors: SAITOH W SUEMASU T KOHNO Y WATANABE M ASADA M
Citation: W. Saitoh et al., MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCEOF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS, JPN J A P 1, 34(8B), 1995, pp. 4481-4484

Authors: SAITOH W SUEMASU T KOHNO Y WATANABE M ASADA M
Citation: W. Saitoh et al., METAL (COSI2) INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR FABRICATED BY ELECTRON-BEAM LITHOGRAPHY ON A SI SUBSTRATE/, JPN J A P 2, 34(10A), 1995, pp. 1254-1256

Authors: ASADA M WATANABE M SUEMASU T KOHNO Y SAITOH W
Citation: M. Asada et al., EPITAXIAL-GROWTH OF A METAL(COSI2) INSULATOR(CAF2) NANOMETER-THICK HETEROSTRUCTURE AND ITS APPLICATION TO QUANTUM-EFFECT DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 623-628

Authors: SUEMASU T KOHNO Y SAITOH W WATANABE M ASADA M
Citation: T. Suemasu et al., THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2203-2210

Authors: SUEMASU T WATANABE M SUZUKI J KOHNO Y ASADA M SUZUKI N
Citation: T. Suemasu et al., METAL(COSI2) INSULATOR(CAF2) RESONANT-TUNNELING DIODE/, JPN J A P 1, 33(1A), 1994, pp. 57-65

Authors: SUEMASU T KOHNO Y SAITOH W SUZUKI N WATANABE M ASADA M
Citation: T. Suemasu et al., QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE, JPN J A P 2, 33(12B), 1994, pp. 1762-1765

Authors: SUEMASU T KOHNO Y SUZUKI N WATANABE M ASADA M
Citation: T. Suemasu et al., DIFFERENT CHARACTERISTICS OF METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING TRANSISTORS DEPENDING ON BASE QUANTUM-WELL LAYER, IEICE transactions on electronics, E77C(9), 1994, pp. 1450-1454

Authors: SUEMASU T KURUMIYA Y ISHIBASHI K
Citation: T. Suemasu et al., ANALYSIS OF ABNORMAL OUTPUT OF ZIRCONIA OXYGEN SENSOR IN EXHAUST-GAS AT LOW EXCESS AIR RATIO, Sensors and actuators. B, Chemical, 14(1-3), 1993, pp. 501-503
Risultati: 1-21 |