Results: 1-25 | 26-44
Results: 1-25/44

Authors: ZOLPER JC HAN J BIEFELD RM VANDEUSEN SB WAMPLER WR REIGER DJ PEARTON SJ WILLIAMS JS TAN HH KARLICEK RF STALL RA
Citation: Jc. Zolper et al., SI-IMPLANTATION ACTIVATION ANNEALING OF GAN UP TO 1400-DEGREES-C, Journal of electronic materials, 27(4), 1998, pp. 179-184

Authors: EDWARDS NV YOO SD BREMSER MD HORTON MN PERKINS NR WEEKS TW LIU H STALL RA KUECH TF DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., SPECTROSCOPIC ELLIPSOMETRY AND LOW-TEMPERATURE REFLECTANCE - COMPLEMENTARY ANALYSIS OF GAN THIN-FILMS, Thin solid films, 313, 1998, pp. 187-192

Authors: SHAN W WALUKIEWICZ W HALLER EE LITTLE BD SONG JJ MCCLUSKEY MD JOHNSON NM FENG ZC SCHURMAN M STALL RA
Citation: W. Shan et al., OPTICAL-PROPERTIES OF INXGA1-XN ALLOYS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 84(8), 1998, pp. 4452-4458

Authors: SHAN W AGER JW WALUKIEWICZ W HALLER EE LITTLE BD SONG JJ SCHURMAN M FENG ZC STALL RA GOLDENBERG B
Citation: W. Shan et al., NEAR-BAND-EDGE PHOTOLUMINESCENCE EMISSION IN ALXGA1-XN UNDER HIGH-PRESSURE, Applied physics letters, 72(18), 1998, pp. 2274-2276

Authors: KRYSTEK W POLLAK FH FENG ZC SCHURMAN M STALL RA
Citation: W. Krystek et al., DETERMINATION OF THE CARRIER-TYPE AT III-NITRIDE SEMICONDUCTOR SURFACES INTERFACES USING CONTACTLESS ELECTROREFLECTANCE/, Applied physics letters, 72(11), 1998, pp. 1353-1355

Authors: TAN HH WILLIAMS JS ZOU J COCKAYNE DJH PEARTON SJ ZOLPER JC STALL RA
Citation: Hh. Tan et al., ANNEALING OF ION-IMPLANTED GALLIUM NITRIDE, Applied physics letters, 72(10), 1998, pp. 1190-1192

Authors: LI TK ZAWADZKI P STALL RA
Citation: Tk. Li et al., MICROSTRUCTURE AND PROPERTIES OF PBZR1-XTIXO3 THIN-FILMS MADE BY ONE AND 2-STEP METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Integrated ferroelectrics, 18(1-4), 1997, pp. 155-169

Authors: LI TK ZAWADZKI P STALL RA LIANG SH LU YC
Citation: Tk. Li et al., HIGH DIELECTRIC-CONSTANT BAXSR1-XTIO3 (BST) THIN-FILMS MADE BY MOCVD TECHNIQUES FOR DRAM APPLICATIONS, Integrated ferroelectrics, 17(1-4), 1997, pp. 127

Authors: EDWARDS NV YOO SD BREMSER MD ZHELEVA T HORTON MN PERKINS NR WEEKS TW LIU H STALL RA KUECH TF DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 134-141

Authors: FENG ZC SCHURMAN M STALL RA
Citation: Zc. Feng et al., HOW TO DISTINGUISH THE RAMAN MODES OF EPITAXIAL GAN WITH PHOTON FEATURES FROM SAPPHIRE SUBSTRATE - OPTICAL-PROPERTIES OF GAN FILM GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION - COMMENT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2428-2430

Authors: STECKL AJ DEVRAJAN J TRAN C STALL RA
Citation: Aj. Steckl et al., GROWTH AND CHARACTERIZATION OF GAN THIN-FILMS ON SIC SOI SUBSTRATES, Journal of electronic materials, 26(3), 1997, pp. 217-223

Authors: HWANG CY SCHURMAN MJ MAYO WE LU YC STALL RA SALAGAJ T
Citation: Cy. Hwang et al., EFFECT OF STRUCTURAL DEFECTS AND CHEMICAL-IMPURITIES ON HALL MOBILITIES IN LOW-PRESSURE MOCVD GROWN GAN, Journal of electronic materials, 26(3), 1997, pp. 243-251

Authors: HOU HQ BREILAND WG HAMMONS BE BIEFELD RM BAUCOM KC STALL RA
Citation: Hq. Hou et al., GROWTH STUDY OF ALGAAS USING DIMETHYLETHYLAMINE ALANE AS THE ALUMINUMPRECURSOR, Journal of electronic materials, 26(10), 1997, pp. 1178-1183

Authors: ZOLPER JC CRAWFORD MH WILLIAMS JS TAN HH STALL RA
Citation: Jc. Zolper et al., HIGH-DOSE SI-IMPLANTATION AND MG-IMPLANTATION IN CAN - ELECTRICAL ANDSTRUCTURAL-ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 467-470

Authors: MALIKOVA L HUANG YS POLLAK FH FENG ZC SCHURMAN M STALL RA
Citation: L. Malikova et al., TEMPERATURE-DEPENDENCE OF THE ENERGIES AND BROADENING PARAMETERS OF THE EXCITONIC INTERBAND-TRANSITIONS IN GA0.95AL0.05N, Solid state communications, 103(5), 1997, pp. 273-278

Authors: TRAN CA KARLICEK R SCHURMAN M SALAGAJ T CASSIDY R FERGUSON I THOMPSON AG STALL RA HWANG CY
Citation: Ca. Tran et al., STRUCTURAL-PROPERTIES OF GAN GROWN BY MOVPE TURBODISC MASS-PRODUCTIONREACTOR, Journal of crystal growth, 174(1-4), 1997, pp. 647-652

Authors: THOMPSON AG STALL RA KROLL W ARMOUR E BECKHAM C ZAWADZKI P AINA L SIEPEL K
Citation: Ag. Thompson et al., LARGE-SCALE MANUFACTURING OF COMPOUND SEMICONDUCTORS BY MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 92-96

Authors: SHAN W SONG JJ FENG ZC SCHURMAN M STALL RA
Citation: W. Shan et al., PRESSURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF INXGA1-XN, Applied physics letters, 71(17), 1997, pp. 2433-2435

Authors: LI Y LU Y SHEN H WRABACK M BROWN MG SCHURMAN M KOSZI L STALL RA
Citation: Y. Li et al., TEMPERATURE-DEPENDENCE OF ENERGY-GAP IN GAN THIN-FILM STUDIED BY THERMOMODULATION, Applied physics letters, 70(18), 1997, pp. 2458-2460

Authors: EDWARDS NV YOO SD BREMSER MD WEEKS TW NAM OH DAVIS RF LIU H STALL RA HORTON MN PERKINS NR KUECH TF ASPNES DE
Citation: Nv. Edwards et al., VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS, Applied physics letters, 70(15), 1997, pp. 2001-2003

Authors: FENG ZC SCHURMAN M STALL RA PAVLOSKY M WHITLEY A
Citation: Zc. Feng et al., RAMAN-SCATTERING AS A CHARACTERIZATION TOOL FOR EPITAXIAL GAN THIN-FILMS GROWN ON SAPPHIRE BY TURBO DISK METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied optics, 36(13), 1997, pp. 2917-2922

Authors: THOMPSON AG STALL RA ZAWADZKI P EVANS GH
Citation: Ag. Thompson et al., THE SCALING OF CVD ROTATING-DISK REACTORS TO LARGE SIZES AND COMPARISON WITH THEORY, Journal of electronic materials, 25(9), 1996, pp. 1487-1494

Authors: ZOLPER JC CRAWFORD MH PEARTON SJ ABERNATHY CR VARTULI CB YUAN C STALL RA
Citation: Jc. Zolper et al., ION-IMPLANTATION AND RAPID THERMAL-PROCESSING OF III-V NITRIDES, Journal of electronic materials, 25(5), 1996, pp. 839-844

Authors: YUAN C SALAGAJ T KROLL W STALL RA SCHURMAN M HWANG CY LI Y MAYO WE LU Y KRISHNANKUTTY S KOLBAS RM
Citation: C. Yuan et al., EFFECT OF SHROUD FLOW ON HIGH-QUALITY INXGA1-XN DEPOSITION IN A PRODUCTION SCALE MULTI-WAFER-ROTATING-DISC REACTOR, Journal of electronic materials, 25(4), 1996, pp. 749-753

Authors: ZHANG HY HE XH SHIH YH SCHURMAN M FENG ZC STALL RA
Citation: Hy. Zhang et al., WAVE-GUIDE STUDY AND REFRACTIVE-INDEXES OF GAN-MG EPITAXIAL FILM, Optics letters, 21(19), 1996, pp. 1529-1531
Risultati: 1-25 | 26-44