Results: 1-7 |
Results: 7

Authors: HWANG CY SCHURMAN MJ MAYO WE LU YC STALL RA SALAGAJ T
Citation: Cy. Hwang et al., EFFECT OF STRUCTURAL DEFECTS AND CHEMICAL-IMPURITIES ON HALL MOBILITIES IN LOW-PRESSURE MOCVD GROWN GAN, Journal of electronic materials, 26(3), 1997, pp. 243-251

Authors: TRAN CA KARLICEK R SCHURMAN M SALAGAJ T CASSIDY R FERGUSON I THOMPSON AG STALL RA HWANG CY
Citation: Ca. Tran et al., STRUCTURAL-PROPERTIES OF GAN GROWN BY MOVPE TURBODISC MASS-PRODUCTIONREACTOR, Journal of crystal growth, 174(1-4), 1997, pp. 647-652

Authors: YUAN C SALAGAJ T KROLL W STALL RA SCHURMAN M HWANG CY LI Y MAYO WE LU Y KRISHNANKUTTY S KOLBAS RM
Citation: C. Yuan et al., EFFECT OF SHROUD FLOW ON HIGH-QUALITY INXGA1-XN DEPOSITION IN A PRODUCTION SCALE MULTI-WAFER-ROTATING-DISC REACTOR, Journal of electronic materials, 25(4), 1996, pp. 749-753

Authors: YUAN C SALAGAJ T GURARY A THOMPSON AG KROLL W STALL RA HWANG CY SCHURMAN M LI Y MAYO WE LU Y KRISHNANKUTTY S SHMAGIN IK KOLBAS RM PEARTON SJ
Citation: C. Yuan et al., INVESTIGATION OF N-TYPE AND P-TYPE DOPING OF GAN DURING EPITAXIAL-GROWTH IN A MASS-PRODUCTION SCALE MULTIWAFER-ROTATING-DISK REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2075-2080

Authors: WALKER R GURARY AI YUAN C ZAWADZKI P MOY K SALAGAJ T THOMPSON AG KROLL WJ STALL RA SCHUMAKER NE
Citation: R. Walker et al., NOVEL HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION VERTICAL ROTATING-DISK REACTOR WITH MULTIZONE HEATING FOR GAN AND RELATED MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 97-101

Authors: HWANG CY SCHURMAN MJ MAYO WE LI Y LU Y LIU H SALAGAJ T STALL RA
Citation: Cy. Hwang et al., EFFECT OF SUBSTRATE PRETREATMENT ON GROWTH OF GAN ON (0001)SAPPHIRE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 672-675

Authors: YUAN C SALAGAJ T GURARY A ZAWADZKI P CHERN CS KROLL W STALL RA LI Y SCHURMAN M HWANG CY MAYO WE LU Y PEARTON SJ KRISHNANKUTTY S KOLBAS RM
Citation: C. Yuan et al., HIGH-QUALITY P-TYPE GAN DEPOSITION ON C-SAPPHIRE SUBSTRATES IN A MULTIWAFER ROTATING-DISK REACTOR, Journal of the Electrochemical Society, 142(9), 1995, pp. 163-165
Risultati: 1-7 |