Results: 1-6 |
Results: 6

Authors: Sreenivasan, R Gougousi, T Xu, YH Kidder, J Zafiriou, E Rubloff, GW
Citation: R. Sreenivasan et al., Run to run control in tungsten chemical vapor deposition using H-2/WF6 at low pressures, J VAC SCI B, 19(5), 2001, pp. 1931-1941

Authors: Chang, HY Adomaitis, RA Kidder, JN Rubloff, GW
Citation: Hy. Chang et al., Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model development, and parameter identification, J VAC SCI B, 19(1), 2001, pp. 230-238

Authors: Henn-Lecordier, L Kidder, JN Rubloff, GW Gogol, CA Wajid, A
Citation: L. Henn-lecordier et al., Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing, J VAC SCI A, 19(2), 2001, pp. 621-626

Authors: Gougousi, T Xu, YH Kidder, JN Rubloff, GW Tilford, CR
Citation: T. Gougousi et al., Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H-2/WF6, J VAC SCI B, 18(3), 2000, pp. 1352-1363

Authors: Herrmann, JW Chandrasekaran, N Conaghan, BF Nguyen, MQ Rubloff, GW Shi, RZ
Citation: Jw. Herrmann et al., Evaluating the impact of process changes on cluster tool performance, IEEE SEMIC, 13(2), 2000, pp. 181-192

Authors: Lu, GQ Tedder, LL Rubloff, GW
Citation: Gq. Lu et al., Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O, J VAC SCI B, 17(4), 1999, pp. 1417-1423
Risultati: 1-6 |