Results: 1-8 |
Results: 8

Authors: Lorenz, M Hochmuth, H Natusch, D Kusunoki, M Svetchnikov, VL Riede, V Stanca, I Kastner, G Hesse, D
Citation: M. Lorenz et al., High-quality Y-Ba-Cu-O thin films by PLD - Ready for market applications, IEEE APPL S, 11(1), 2001, pp. 3209-3212

Authors: Kasic, A Schubert, M Rheinlander, B Riede, V Einfeldt, S Hommel, D Kuhn, B Off, J Scholz, F
Citation: A. Kasic et al., Effective carrier mass and mobility versus carrier concentration in p- andn-type alpha-GaN determined by infrared ellipsometry and Hall resistivity measurements, MAT SCI E B, 82(1-3), 2001, pp. 74-76

Authors: Riede, A Helmstedt, M Riede, V Zemek, J Stejskal, J
Citation: A. Riede et al., In situ polymerized polyaniline films. 2. Dispersion polymerization of aniline in the presence of colloidal silica, LANGMUIR, 16(15), 2000, pp. 6240-6244

Authors: Bodnar, IV Eifler, A Doering, TH Schmitz, W Bente, K Gremenok, VF Victorov, IA Riede, V
Citation: Iv. Bodnar et al., Growth and characterisation of(CuInTe2)(1-x) (2 ZnTe)(x) solid solution single crystals, CRYST RES T, 35(10), 2000, pp. 1135-1140

Authors: Eifler, A Hecht, JD Riede, V Lippold, G Schmitz, W Krauss, G Kramer, V Grill, W
Citation: A. Eifler et al., Infrared and Raman study of lattice vibrations of CdAl2Se4 and CdAl2S4 single crystals, J PHYS-COND, 11(25), 1999, pp. 4821-4832

Authors: Eifler, A Hecht, JD Lippold, G Riede, V Grill, W Krauss, G Kramer, V
Citation: A. Eifler et al., Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals, PHYSICA B, 263, 1999, pp. 806-808

Authors: Tharigen, T Lippold, G Riede, V Lorenz, M Koivusaari, KJ Lorenz, D Mosch, S Grau, P Hesse, R Streubel, P Szargan, R
Citation: T. Tharigen et al., Hard amorphous CSixNy thin films deposited by RF nitrogen plasma assisted pulsed laser ablation of mixed graphite/Si3N4-targets, THIN SOL FI, 348(1-2), 1999, pp. 103-113

Authors: Oswald, J Hulicius, E Vorlicek, V Pangrac, J Melichar, K Simecek, T Lippold, G Riede, V
Citation: J. Oswald et al., Study of InAs quantum dots in GaAs prepared on misoriented substrates, THIN SOL FI, 336(1-2), 1998, pp. 80-83
Risultati: 1-8 |