Results: 1-8 |
Results: 8

Authors: Kasic, A Schubert, M Rheinlander, B Riede, V Einfeldt, S Hommel, D Kuhn, B Off, J Scholz, F
Citation: A. Kasic et al., Effective carrier mass and mobility versus carrier concentration in p- andn-type alpha-GaN determined by infrared ellipsometry and Hall resistivity measurements, MAT SCI E B, 82(1-3), 2001, pp. 74-76

Authors: Leibiger, G Gottschalch, V Rheinlander, B Sik, J Schubert, M
Citation: G. Leibiger et al., Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths, J APPL PHYS, 89(9), 2001, pp. 4927-4938

Authors: Kovac, J Pudis, D Satka, A Janos, L Jakabovic, J Schwabe, R Gottschalch, V Benndorf, G Rheinlander, B
Citation: J. Kovac et al., Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAsmonolayer multiquantum-well structures, MICROEL ENG, 51-2, 2000, pp. 309-316

Authors: Nassauer, S Kasic, A Rheinlander, B Gottschalch, V Kovac, J Kvietkova, J Benndorf, G
Citation: S. Nassauer et al., Excitonic effects of InAs monolayers in GaAs/AlGaAs-microcavities, MICROEL ENG, 51-2, 2000, pp. 401-407

Authors: Leibiger, G Gottschalch, V Rheinlander, B Sik, J Schubert, M
Citation: G. Leibiger et al., Nitrogen dependence of the GaAsN interband critical points E-1 and E-1+Delta(1) determined by spectroscopic ellipsometry, APPL PHYS L, 77(11), 2000, pp. 1650-1652

Authors: Schubert, M Woollam, JA Kasic, A Rheinlander, B Off, J Kuhn, B Scholz, F
Citation: M. Schubert et al., Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry, PHYS ST S-B, 216(1), 1999, pp. 655-658

Authors: Schubert, M Hofmann, T Rheinlander, B Pietzonka, I Sass, T Gottschalch, V Woollam, JA
Citation: M. Schubert et al., Near-band-gap CuPt-order-induced birefringence in Al0.48Ga0.52InP2, PHYS REV B, 60(24), 1999, pp. 16618-16634

Authors: Schubert, M Woollam, JA Leibiger, G Rheinlander, B Pietzonka, I Sass, T Gottschalch, V
Citation: M. Schubert et al., Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 <= x <=1) lattice matched to GaAs, J APPL PHYS, 86(4), 1999, pp. 2025-2033
Risultati: 1-8 |