Results: 1-4 |
Results: 4

Authors: BONDARENKO I KIRK H KONONCHUK O ROZGONYI G
Citation: I. Bondarenko et al., CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 32-37

Authors: RAEBIGER J ROMANOWSKI A ZHANG Q ROZGONYI G
Citation: J. Raebiger et al., CARRIER LIFETIME AND X-RAY-IMAGING CORRELATIONS OF AN OXIDE-INDUCED STACKING-FAULT RING AND ITS GETTERING BEHAVIOR IN CZOCHRALSKI SILICON, Applied physics letters, 69(20), 1996, pp. 3037-3038

Authors: KOVESHNIKOV S ROZGONYI G
Citation: S. Koveshnikov et G. Rozgonyi, IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE - REPLY, Applied physics letters, 68(13), 1996, pp. 1870-1871

Authors: BUCZKOWSKI A ROZGONYI G SHIMURA F MISHRA K
Citation: A. Buczkowski et al., PHOTOCONDUCTANCE MINORITY-CARRIER LIFETIME VS SURFACE PHOTOVOLTAGE DIFFUSION LENGTH IN SILICON, Journal of the Electrochemical Society, 140(11), 1993, pp. 3240-3245
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