Results: 1-13 |
Results: 13

Authors: Vogt, P Ludge, K Zorn, M Pristovsek, M Braun, W Richter, W Esser, N
Citation: P. Vogt et al., Atomic structure and composition of the (2X4) reconstruction of InGaP(001), J VAC SCI B, 18(4), 2000, pp. 2210-2214

Authors: Pristovsek, M Menhal, H Zettler, JT Richter, W
Citation: M. Pristovsek et al., Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth, APPL SURF S, 166(1-4), 2000, pp. 433-436

Authors: Vogt, P Ludge, K Zorn, M Pristovsek, M Braun, W Richter, W Esser, N
Citation: P. Vogt et al., Surface structure of ordered InGaP(001): The (2x4) reconstruction, PHYS REV B, 62(19), 2000, pp. 12601-12604

Authors: Pristovsek, M Han, B Zettler, JT Richter, W
Citation: M. Pristovsek et al., In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J CRYST GR, 221, 2000, pp. 149-155

Authors: Pristovsek, M Trepk, T Klein, M Zettler, JT Richter, W
Citation: M. Pristovsek et al., Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption, J APPL PHYS, 87(3), 2000, pp. 1245-1250

Authors: Esser, N Schmidt, WG Bernholc, J Frisch, AM Vogt, P Zorn, M Pristovsek, M Richter, W Bechstedt, F Hannappel, T Visbeck, S
Citation: N. Esser et al., GaP(001) and InP(001): Reflectance anisotropy and surface geometry, J VAC SCI B, 17(4), 1999, pp. 1691-1696

Authors: Haberland, K Kurpas, P Pristovsek, M Zettler, JT Veyers, M Richter, W
Citation: K. Haberland et al., Spectroscopic process sensors in MOVPE device production, APPL PHYS A, 68(3), 1999, pp. 309-313

Authors: Frisch, AM Schmidt, WG Bernholc, J Pristovsek, M Esser, N Richter, W
Citation: Am. Frisch et al., (2x4) GaP(001) surface: Atomic structure and optical anisotropy, PHYS REV B, 60(4), 1999, pp. 2488-2494

Authors: Pristovsek, M Menhal, H Schmidtling, T Esser, N Richter, W
Citation: M. Pristovsek et al., Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy, MICROELEC J, 30(4-5), 1999, pp. 449-453

Authors: Pahlke, D Poser, F Steimetz, E Pristovsek, M Esser, N Richter, W
Citation: D. Pahlke et al., Photoluminescence scanning near-field optical microscopy on III-V quantum dots, PHYS ST S-A, 170(2), 1998, pp. 401-410

Authors: Pristovsek, M Menhal, H Wehnert, T Zettler, JT Schmidtling, T Esser, N Richter, W Setzer, C Platen, J Jacobi, K
Citation: M. Pristovsek et al., Reconstructions of the GaAs (1 1 3) surface, J CRYST GR, 195(1-4), 1998, pp. 1-5

Authors: Zettler, JT Haberland, K Zorn, M Pristovsek, M Richter, W Kurpas, P Weyers, M
Citation: Jt. Zettler et al., Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques, J CRYST GR, 195(1-4), 1998, pp. 151-162

Authors: Hardtdegen, H Pristovsek, M Menhal, H Zettler, JT Richter, W Schmitz, D
Citation: H. Hardtdegen et al., In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere, J CRYST GR, 195(1-4), 1998, pp. 211-216
Risultati: 1-13 |