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Authors: Droopad, R Yu, Z Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296
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