Results: 1-8 |
Results: 8

Authors: Masuda, A Niikura, C Ishibashi, Y Matsumura, H
Citation: A. Masuda et al., Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition, SOL EN MAT, 66(1-4), 2001, pp. 259-265

Authors: Niikura, C Brenot, R Guillet, J Bouree, JE Kleider, JP Bruggemann, R Longeaud, C
Citation: C. Niikura et al., Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate, SOL EN MAT, 66(1-4), 2001, pp. 421-429

Authors: Niikura, C Kim, SY Drevillon, B Poissant, Y Cabarrocas, PRI Bouree, JE
Citation: C. Niikura et al., Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD, THIN SOL FI, 395(1-2), 2001, pp. 178-183

Authors: Guillet, J Niikura, C Bouree, JE Kleider, JP Longeaud, C Bruggemann, R
Citation: J. Guillet et al., Microcrystalline silicon deposited by the hot-wire CVD technique, MAT SCI E B, 69, 2000, pp. 284-288

Authors: Bruggemann, R Kleider, JP Longeaud, C Mencaraglia, D Guillet, J Bouree, JE Niikura, C
Citation: R. Bruggemann et al., Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition, J NON-CRYST, 266, 2000, pp. 258-262

Authors: Niikura, C Guillet, J Brenot, R Equer, B Bouree, JE Voz, C Peiro, D Asensi, JM Bertomeu, J Andreu, J
Citation: C. Niikura et al., Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 385-390

Authors: Hamers, EAG Morral, AFI Niikura, C Brenot, R Cabarrocas, PRI
Citation: Eag. Hamers et al., Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films, J APPL PHYS, 88(6), 2000, pp. 3674-3688

Authors: Niikura, C Masuda, A Matsumura, H
Citation: C. Niikura et al., Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition, J APPL PHYS, 86(2), 1999, pp. 985-990
Risultati: 1-8 |