Results: 1-10 |
Results: 10

Authors: Kim, DJ Moon, YT Song, KM Park, SJ
Citation: Dj. Kim et al., Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells, JPN J A P 1, 40(5A), 2001, pp. 3085-3088

Authors: Ahn, KS Kim, DJ Moon, YT Kim, HG Park, SJ
Citation: Ks. Ahn et al., Effects of a two-step rapid thermal annealing process on Mg-doped p-type GaN films grown by metalorganic chemical vapor deposition, J VAC SCI B, 19(1), 2001, pp. 215-218

Authors: Kim, DJ Moon, YT Song, KM Lee, IW Park, SJ
Citation: Dj. Kim et al., Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD, J ELEC MAT, 30(2), 2001, pp. 99-102

Authors: Song, KM Kim, DJ Moon, YT Park, SJ
Citation: Km. Song et al., Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium, J CRYST GR, 233(3), 2001, pp. 439-445

Authors: Moon, YT Kim, DJ Song, KM Choi, CJ Han, SH Seong, TY Park, SJ
Citation: Yt. Moon et al., Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells, J APPL PHYS, 89(11), 2001, pp. 6514-6518

Authors: Moon, YT Kim, DJ Park, JS Oh, JT Lee, JM Ok, YW Kim, H Park, SJ
Citation: Yt. Moon et al., Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots, APPL PHYS L, 79(5), 2001, pp. 599-601

Authors: Moon, YT Kim, DJ Song, KM Kim, DW Yi, MS Noh, DY Park, SJ
Citation: Yt. Moon et al., Effect of growth interruption and the introduction of H-2 on the growth ofInGaN/GaN multiple quantum wells, J VAC SCI B, 18(6), 2000, pp. 2631-2634

Authors: Kim, DJ Moon, YT Ahn, KS Park, SJ
Citation: Dj. Kim et al., In situ normal incidence reflectance study on the effect of growth rate ofnucleation layer on GaN by metalorganic chemical vapor deposition, J VAC SCI B, 18(1), 2000, pp. 140-143

Authors: Kim, DJ Moon, YT Song, KM Choi, CJ Ok, YW Seong, TY Park, SJ
Citation: Dj. Kim et al., Structural and optical properties of InGaN/GaN multiple quantum wells: Theeffect of the number of InGaN/GaN pairs, J CRYST GR, 221, 2000, pp. 368-372

Authors: Moon, YT Kim, DJ Song, KM Lee, IH Yi, MS Noh, DY Choi, CJ Seong, TY Park, SJ
Citation: Yt. Moon et al., Optical and structural studies of phase separation in InGaN film grown by MOCVD, PHYS ST S-B, 216(1), 1999, pp. 167-170
Risultati: 1-10 |