Results: 1-23 |
Results: 23

Authors: LOVERGINE N LONGO M MANCINI AM LEO G MAZZER M BERTI M DRIGO AV
Citation: N. Lovergine et al., STRANSKI-KRASTANOW SELF-ORGANIZED GROWTH OF NANO-SCALE ZNTE ISLANDS ON (001)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 249-253

Authors: SALVIATI G ZANOTTIFREGONARA C BORGARINO M LAZZARINI L CATTANI L COVA P MAZZER M
Citation: G. Salviati et al., STUDY OF DEGRADATION MECHANISMS IN COMPOUND SEMICONDUCTOR-BASED DEVICES BY SEM-CATHODOLUMINESCENCE, Microelectronics and reliability, 38(6-8), 1998, pp. 1199-1210

Authors: PENNETTA C GINGL Z KISS LB REGGIANI L DEVITTORIO M COLA A MAZZER M
Citation: C. Pennetta et al., A PERCOLATIVE SIMULATION OF DIELECTRIC-LIKE BREAKDOWN, Microelectronics and reliability, 38(2), 1998, pp. 249-253

Authors: LEO G LONGO M LOVERGINE N MAZZER M MANCINI AM BERTI M DRIGO AV
Citation: G. Leo et al., STRANSKI-KRASTANOW MOVPE GROWTH OF NANOSCALE ZNTE ISLANDS ON (001)GAAS, Journal of crystal growth, 185, 1998, pp. 1332-1334

Authors: MAZZER M DEGIORGI M CINGOLANI R PORELLO G ROSSI F MOLINARI E
Citation: M. Mazzer et al., ENGINEERING THE STRAIN FIELD FOR THE CONTROL OF QUANTUM CONFINEMENT -AN ANALYTICAL MODEL FOR ARBITRARY SHAPE NANOSTRUCTURES, Journal of applied physics, 84(7), 1998, pp. 3437-3441

Authors: LONGO M LOVERGINE N MANCINI AM PASSASEO A LEO G MAZZER M BERTI M DRIGO AV
Citation: M. Longo et al., SELF-ORGANIZED GROWTH OF ZNTE NANOSCALE ISLANDS ON (001)GAAS, Applied physics letters, 72(3), 1998, pp. 359-361

Authors: MAZZER M CALCAGNILE L LEO G SALVIATI G ZANOTTIFREGONARA C LOVERGINE N PRETE P IMBRIANI G CINGOLANI R MANCINI AM ROMANATO F DRIGO AV
Citation: M. Mazzer et al., DEEP BLUE-EMITTING ZNS ZNSE MULTIPLE-QUANTUM-WELL LASERS GROWN BY MOVPE ON (001)GAAS/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 97-101

Authors: DEVITTBRIO M CINGOLANI R MAZZER M HOLT DB
Citation: M. Devittbrio et al., SUBMICRON CHARACTERIZATION TOOL FOR FAST INVESTIGATION OF DEFECTS ANDMORPHOLOGY OF SEMICONDUCTOR-DEVICES, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, 1997, pp. 63-68

Authors: MAZZER M DRIGO AV ROMANATO F SALVIATI G LAZZARINI L
Citation: M. Mazzer et al., SELECTIVE ION-CHANNELING STUDY OF MISFIT DISLOCATION GRIDS IN SEMICONDUCTOR HETEROSTRUCTURES - THEORY AND EXPERIMENTS, Physical review. B, Condensed matter, 56(11), 1997, pp. 6895-6910

Authors: MAZZER M LONGO M LEO G LOVERGINE N MANCINI AM DRIGO AV ROMANATO F FREGONARA CZ SALVIATI G
Citation: M. Mazzer et al., STRUCTURAL STUDY OF (100)CDTE EPILAYERS GROWN BY MOVPE ON ZNTE BUFFERED AND UNBUFFERED (100)GAAS, Journal of crystal growth, 170(1-4), 1997, pp. 553-557

Authors: MAZZER M GRUNBAUM E BARNHAM KWJ BARNES J GRIFFIN PR HOLT DB HUTCHISON JL NORMAN AG DAVID JPR ROBERTS JS GREY R
Citation: M. Mazzer et al., STUDY OF MISFIT DISLOCATIONS BY EBIC, CL AND HRTEM IN GAAS INGAAS LATTICE-STRAINED MULTIQUANTUM-WELL P-I-N SOLAR-CELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 43-51

Authors: HOLT DB HARDINGHAM C LAZZARINI L NASI L ZANOTTIFREGONARA C SALVIATI G MAZZER M
Citation: Db. Holt et al., PROPERTIES AND STRUCTURE OF ANTIPHASE BOUNDARIES IN GAAS GE SOLAR-CELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 204-207

Authors: BERTI M DRIGO AV GIULIANI A MAZZER M CAMPORESE A ROSSETTO G TORZO G
Citation: M. Berti et al., INP GAAS SELF-ASSEMBLED NANOSTRUCTURES - MODELIZATION AND EXPERIMENT/, Journal of applied physics, 80(3), 1996, pp. 1931-1933

Authors: GRIFFIN PR BARNES J BARNHAM KWJ HAARPAINTNER G MAZZER M ZANOTTIFREGONARA C GRUNBAUM E OLSON C ROHR C DAVID JPR ROBERTS JS GREY R PATE MA
Citation: Pr. Griffin et al., EFFECT OF STRAIN RELAXATION ON FORWARD BIAS DARK CURRENTS IN GAAS INGAAS MULTIQUANTUM-WELL P-I-N-DIODES/, Journal of applied physics, 80(10), 1996, pp. 5815-5820

Authors: BARNES J NELSON J BARNHAM KWJ ROBERTS JS PATE MA GREY R DOSANJH SS MAZZER M GHIRALDO F
Citation: J. Barnes et al., CHARACTERIZATION OF GAAS INGAAS QUANTUM-WELLS USING PHOTOCURRENT SPECTROSCOPY/, Journal of applied physics, 79(10), 1996, pp. 7775-7779

Authors: NASI L SALVIATI G MAZZER M ZANOTTIFREGONARA C
Citation: L. Nasi et al., INFLUENCE OF SURFACE-MORPHOLOGY ON ORDERED GAINP STRUCTURES, Applied physics letters, 68(23), 1996, pp. 3263-3265

Authors: BERTI M DRIGO AV MAZZER M CAMPORESE A TORZO G ROSSETTO G
Citation: M. Berti et al., PRODUCTION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES OF EPITAXIAL SEMICONDUCTORS, Journal de physique. IV, 5(C5), 1995, pp. 1157-1163

Authors: ROMANATO F DRIGO AV FRANCESIO L FRANZOSI P LAZZARINI L SALVIATI G MAZZER M BRUNI MR SIMEONE MG
Citation: F. Romanato et al., INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 491-498

Authors: BERTI M DRIGO AV MAZZER M ROMANATO F LAZZARINI L FRANZOSI P SALVIATI G BERTONE D
Citation: M. Berti et al., TRANSITION FROM ISLAND TO CONTINUOUS INP LAYER GROWTH ON (001)GAAS BYMOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 214-218

Authors: FERRARI C FRANZOSI P LAZZARINI L SALVIATI G BERTI M DRIGO AV MAZZER M ROMANATO F BRUNI MR SIMEONE MG
Citation: C. Ferrari et al., MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM EPITAXY-GROWN INGAAS GAAS BUFFER HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 510-514

Authors: SALVIATI G LAZZARINI L FERRARI C FRANZOSI P MILITA S ROMANATO F BERTI M MAZZER M DRIGO AV BRUNI MR SIMEONE MG GAMBACORTI N
Citation: G. Salviati et al., TRANSMISSION ELECTRON-MICROSCOPY, HIGH-RESOLUTION X-RAY-DIFFRACTION AND RUTHERFORD BACKSCATTERING STUDY OF STRAIN RELEASE IN INGAAS GAAS BUFFER LAYERS/, Scanning microscopy, 8(4), 1994, pp. 943-955

Authors: ROMANATO F BERTI M MAZZER M DRIGO AV LAZZARINI L FRANZOSI P SALVIATI G BERTONE D
Citation: F. Romanato et al., STRUCTURAL CHARACTERIZATION TECHNIQUES FOR THE ANALYSIS OF SEMICONDUCTOR STRAINED HETEROSTRUCTURES, Mikrochimica acta, 114, 1994, pp. 431-440

Authors: LOVERGINE N CINGOLANI R LEO G MANCINI AM VASANELLI L ROMANATO F DRIGO AV MAZZER M
Citation: N. Lovergine et al., DETERMINATION OF SURFACE LATTICE STRAIN IN ZNTE EPILAYERS ON (100)GAAS BY ION CHANNELING AND REFLECTANCE SPECTROSCOPY, Applied physics letters, 63(25), 1993, pp. 3452-3454
Risultati: 1-23 |