Results: 1-25 | 26-30
Results: 1-25/30

Authors: Chen, IS Roeder, JF Kim, DJ Maria, JP Kingon, AI
Citation: Is. Chen et al., Metalorganic chemical vapor deposition Pb(Zr,Ti)O-3 and selected lower electrode structures as a pathway to integrated piezoelectric microelectromechanical systems, J VAC SCI B, 19(5), 2001, pp. 1833-1840

Authors: Baumann, PK Streiffer, SK Bai, GR Ghosh, K Auciello, O Thompson, C Stemmer, S Rao, RA Eom, CB Xu, F Trolier-McKinstry, S Kim, DJ Maria, JP Kingon, AI
Citation: Pk. Baumann et al., Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD, INTEGR FERR, 35(1-4), 2001, pp. 1881-1888

Authors: Yoon, SG Kingon, AI Kim, SH
Citation: Sg. Yoon et al., Electrical properties of Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films with various iridium-based top electrodes, INTEGR FERR, 33(1-4), 2001, pp. 155-164

Authors: Hugon, MC Varniere, F Letendu, F Agius, B Vickridge, L Kingon, AI
Citation: Mc. Hugon et al., O-18 study of the oxidation of reactively sputtered Ti1-xAlxN barrier, J MATER RES, 16(9), 2001, pp. 2591-2599

Authors: Yoon, SG Wicaksana, D Kim, DJ Kim, SH Kingon, AI
Citation: Sg. Yoon et al., Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes, J MATER RES, 16(4), 2001, pp. 1185-1189

Authors: Maria, JP Wicaksana, D Kingon, AI Busch, B Schulte, H Garfunkel, E Gustafsson, T
Citation: Jp. Maria et al., High temperature stability in lanthanum and zirconia-based gate dielectrics, J APPL PHYS, 90(7), 2001, pp. 3476-3482

Authors: Yoon, SG Kingon, AI
Citation: Sg. Yoon et Ai. Kingon, Recovery characteristics of hydrogen-damaged (Pb,La)(Zr,Ti)O-3 capacitors with Pt and IrO2 top electrodes, J ELCHEM SO, 148(7), 2001, pp. F137-F139

Authors: Stemmer, S Maria, JP Kingon, AI
Citation: S. Stemmer et al., Structure and stability of La2O3/SiO2 layers on Si(001), APPL PHYS L, 79(1), 2001, pp. 102-104

Authors: Kim, SH Woo, HJ Ha, J Hwang, CS Kim, HR Kingon, AI
Citation: Sh. Kim et al., Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O-3 thin films, APPL PHYS L, 78(19), 2001, pp. 2885-2887

Authors: Letendu, F Hugon, MC Desvignes, JM Agius, B Vickridge, I Kim, DJ Kingon, AI
Citation: F. Letendu et al., Oxidation resistance of TaSiN diffusion barriers, INTEGR FERR, 31(1-4), 2000, pp. 315-322

Authors: Hugon, MC Desvignes, JM Agius, B Vickridge, IC Kim, DJ Kingon, AI
Citation: Mc. Hugon et al., Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films, NUCL INST B, 161, 2000, pp. 578-583

Authors: Kingon, AI Maria, JP Streiffer, SK
Citation: Ai. Kingon et al., Alternative dielectrics to silicon dioxide for memory and logic devices, NATURE, 406(6799), 2000, pp. 1032-1038

Authors: Yoon, SG Kingon, AI Kim, SH
Citation: Sg. Yoon et al., Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes, J APPL PHYS, 88(11), 2000, pp. 6690-6695

Authors: Christman, JA Kim, SH Maiwa, H Maria, JP Rodriguez, BJ Kingon, AI Nemanich, RJ
Citation: Ja. Christman et al., Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy, J APPL PHYS, 87(11), 2000, pp. 8031-8034

Authors: Kim, SH Lee, DS Hwang, CS Kim, DJ Kingon, AI
Citation: Sh. Kim et al., Thermally induced voltage offsets in Pb(Zr,Ti)O-3 thin films, APPL PHYS L, 77(19), 2000, pp. 3036-3038

Authors: Kim, SH Kim, DJ Maria, JP Kingon, AI Streiffer, SK Im, J Auciello, O Krauss, AR
Citation: Sh. Kim et al., Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties, APPL PHYS L, 76(4), 2000, pp. 496-498

Authors: Maiwa, H Christman, JA Kim, SH Kim, DJ Maria, JP Chen, B Streiffer, SK Kingon, AI
Citation: H. Maiwa et al., Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer, JPN J A P 1, 38(9B), 1999, pp. 5402-5405

Authors: Kingon, AI Streiffer, SK
Citation: Ai. Kingon et Sk. Streiffer, Ferroelectric films and devices, CURR OP SOL, 4(1), 1999, pp. 39-44

Authors: Kim, SH Kim, DJ Im, J Streiffer, SK Auciello, O Maria, JP Kingon, AI
Citation: Sh. Kim et al., Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films, INTEGR FERR, 26(1-4), 1999, pp. 955-970

Authors: Kim, DJ Kim, SH Maria, JP Kingon, AI
Citation: Dj. Kim et al., Influences on imprint failure of SrBi2Ta2O9 thin film capacitors, INTEGR FERR, 25(1-4), 1999, pp. 691-701

Authors: Maiwa, H Maria, JP Christman, JA Kim, SH Streiffer, K Kingon, AI
Citation: H. Maiwa et al., Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients, INTEGR FERR, 24(1-4), 1999, pp. 139-146

Authors: Kim, SH Kim, DJ Im, J Kim, CE Kingon, AI
Citation: Sh. Kim et al., Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices, J SOL-GEL S, 16(1-2), 1999, pp. 57-63

Authors: Kim, SH Kim, DJ Streiffer, SK Kingon, AI
Citation: Sh. Kim et al., Preparation and ferroelectric properties of mixed composition layered leadzirconate titanate thin films for nonvolatile memory applications, J MATER RES, 14(6), 1999, pp. 2476-2483

Authors: Kim, SH Kim, DJ Hong, J Streiffer, SK Kingon, AI
Citation: Sh. Kim et al., Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films, J MATER RES, 14(4), 1999, pp. 1371-1377

Authors: Kim, SH Hong, JG Streiffer, SK Kingon, AI
Citation: Sh. Kim et al., The effect of RuO2/Pt hybrid bottom electrode structure on the leakage andfatigue properties of chemical solution derived Pb(ZrxTi1-x)O-3 thin films, J MATER RES, 14(3), 1999, pp. 1018-1025
Risultati: 1-25 | 26-30