Results: 1-23 |
Results: 23

Authors: Kim, TW Lee, DU Choo, C Kim, JH Jung, M Kim, MD Jeong, HD Yoo, KH Kim, JY Lim, HJ
Citation: Tw. Kim et al., 1.55 mu m wavelength strain-compensated InxGa1-xAs/InyAl1-yAs electroabsorption modulators with high extinction ratio and low polarization-dependent loss, JPN J A P 1, 40(5A), 2001, pp. 3120-3123

Authors: Kim, MD Kang, HA Rhee, SK Seo, JH
Citation: Md. Kim et al., Effects of methanol on expression of an anticoagulant hirudin in recombinant Hansenula polymorpha, J IND MIC B, 27(1), 2001, pp. 58-61

Authors: Kim, MD Kim, CK Nahm, K Ryu, CM
Citation: Md. Kim et al., Ferromagnetic fixed point of the Kondo model in a Luttinger liquid, J PHYS-COND, 13(14), 2001, pp. 3271-3281

Authors: Kim, HS Choi, JH Bang, HM Burm, J Jee, Y Yun, SW Kim, MD Choo, AG
Citation: Hs. Kim et al., 10-Gbps InAlAs/InGaAs superlattice avalanche photodiodes, J KOR PHYS, 39(1), 2001, pp. 28-31

Authors: Kim, MD Choo, AG Ko, SS Baek, DH Hong, SC
Citation: Md. Kim et al., Infrared photodetector of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures, J KOR PHYS, 39(1), 2001, pp. 32-34

Authors: Jung, M Kim, TW Lee, DU Choo, DC Yoo, KH Kim, DL Kim, MD Lim, H
Citation: M. Jung et al., The dependence of the carrier density and the mobility on the spacer-layerthickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric singlequantum wells, APPL SURF S, 177(1-2), 2001, pp. 1-7

Authors: Kim, MD Rhee, SK Seo, JH
Citation: Md. Kim et al., Enhanced production of anticoagulant hirudin in recombinant Saccharomyces cerevisiae by chromosomal delta-integration, J BIOTECH, 85(1), 2001, pp. 41-48

Authors: Kim, TW Lee, DU Choo, DC Kim, HJ Lee, HS Lee, JY Kim, MD Park, SH Park, HL
Citation: Tw. Kim et al., Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers, SOL ST COMM, 118(9), 2001, pp. 465-468

Authors: Park, CJ Kim, HB Lee, YH Kim, DY Kang, TW Hong, CY Cho, HY Kim, MD
Citation: Cj. Park et al., Deep level defects of InAs quantum dots grown on GaAs by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1057-1061

Authors: Kim, MD Choo, AG Kim, TI Ko, SS Baek, DH Hong, SC
Citation: Md. Kim et al., Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures, J CRYST GR, 227, 2001, pp. 1162-1165

Authors: Kim, TW Lee, DU Choo, DC Jung, M Yoo, KH Song, MS Yeo, T Comanescu, G McCombe, BD Kim, MD
Citation: Tw. Kim et al., Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer, J APPL PHYS, 89(5), 2001, pp. 2649-2652

Authors: Kim, TW Lee, DU Lee, HS Lee, JY Kim, MD
Citation: Tw. Kim et al., Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells, J APPL PHYS, 89(4), 2001, pp. 2503-2505

Authors: Kim, HS Choi, JH Bang, HM Jee, Y Yun, SW Burm, J Kim, MD Choo, AG
Citation: Hs. Kim et al., Dark current reduction in APD with BCB passivation, ELECTR LETT, 37(7), 2001, pp. 455-457

Authors: Kim, TW Lee, DU Choo, DC Kim, HJ Lee, HS Lee, JY Kim, MD
Citation: Tw. Kim et al., Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures, APPL PHYS L, 79(1), 2001, pp. 33-35

Authors: Kim, TW Jung, M Lee, DU Kim, HJ You, YS Cho, JW Yoo, KH Lee, JY Kim, MD
Citation: Tw. Kim et al., The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells, J MAT SCI L, 19(9), 2000, pp. 755-757

Authors: Kim, TW Lee, DU Lim, YS Lee, JY Yoo, KH Kim, MD
Citation: Tw. Kim et al., Lattice mismatch and atomic structure studies on InxGa1-xAs/In(y)Al(1-y)AScoupled double-step quantum wells, APPL SURF S, 153(2-3), 2000, pp. 102-107

Authors: Jung, M Lee, DU Kim, TW Yoo, KH Kim, MD Park, HS Kim, DL
Citation: M. Jung et al., Magnetotransport and charge transfer studies on delta-modulation-doped InxGa1-xAs/AlyGa1-yAs strained single quantum wells, J KOR PHYS, 34, 1999, pp. S439-S442

Authors: Kim, MD Park, HS Kim, TW
Citation: Md. Kim et al., Effect of hydrogenation and thermal annealing on the electrical propertiesof Au/p-ZnSe/n-GaAs diodes, J MAT SCI L, 18(6), 1999, pp. 467-469

Authors: Kim, TW Lee, DU You, YS Cho, JW Seo, KY Lim, YS Lee, JY Kim, MD Park, HS
Citation: Tw. Kim et al., Structural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures, APPL SURF S, 143(1-4), 1999, pp. 201-205

Authors: Kim, MD Kang, TW Kim, TW
Citation: Md. Kim et al., Hydrogenation and annealing effects on the deep levels and acceptor neutralization in p-CdTe, APPL SURF S, 137(1-4), 1999, pp. 57-60

Authors: Kim, TW Kim, MD
Citation: Tw. Kim et Md. Kim, Effect of hydrogenation on the electrical and optical properties of p-typeZn1-xMgxSySe1-y epitaxial layers grown on GaAs (100) substrates, SOL ST COMM, 111(9), 1999, pp. 489-494

Authors: Kim, TW Jung, M Lee, DU Kim, MD Park, HS
Citation: Tw. Kim et al., Hydrogenation and annealing effects on electronic subbands in modulation-doped Al0.25Ga0.75As/In0.18Ga0.82As/GaAs strained single quantum wells, SOL ST COMM, 110(10), 1999, pp. 553-557

Authors: Lee, JY Kwon, YH Kim, MD Kim, HJ Kang, TW Hong, CY Cho, HY
Citation: Jy. Lee et al., Enhancement of a rectifying characteristic of InGaP diodes by hydrogenation, J APPL PHYS, 85(1), 1999, pp. 600-603
Risultati: 1-23 |