Results: 1-4 |
Results: 4

Authors: Ayzenshtat, GI Bakin, NN Budnitsky, DL Drugova, EP Germogenov, VP Khludkov, SS Koretskaya, OB Okaevich, LS Porokhovnichenko, LP Potapov, AI Smith, KM Tolbanov, OP Tyazhev, AV Vilisova, MD Vorobiev, AP
Citation: Gi. Ayzenshtat et al., GaAs structures for X-ray imaging detectors, NUCL INST A, 466(1), 2001, pp. 25-32

Authors: Ardyshev, VM Ardyshev, MV Khludkov, SS
Citation: Vm. Ardyshev et al., Special features of electrical activation of Si-28 in single-crystal and epitaxial GaAs subjected to rapid thermal annealing, SEMICONDUCT, 34(1), 2000, pp. 27-31

Authors: Ardyshev, VM Ardyshev, MV Khludkov, SS
Citation: Vm. Ardyshev et al., Effect of the insulator-gallium arsenide boundary on the behavior of silicon in the course of radiation annealing, SEMICONDUCT, 34(1), 2000, pp. 70-72

Authors: Aizenshtadt, GI Kanaev, VG Khan, AV Khludkov, SS Koretskaya, OB Potapov, AI Okaevich, LS Tyazhev, AV Tolbanov, OP
Citation: Gi. Aizenshtadt et al., Ionizing-radiation detectors based on GaAs with deep centers, NUCL INST A, 448(1-2), 2000, pp. 188-191
Risultati: 1-4 |