Results: 1-15 |
Results: 15

Authors: Wierer, JJ Steigerwald, DA Krames, MR O'Shea, JJ Ludowise, MJ Christenson, G Shen, YC Lowery, C Martin, PS Subramanya, S Gotz, W Gardner, NF Kern, RS Stockman, SA
Citation: Jj. Wierer et al., High-power AlGaInN flip-chip light-emitting diodes, APPL PHYS L, 78(22), 2001, pp. 3379-3381

Authors: Green, MF Kern, RS Braff, DL Mintz, J
Citation: Mf. Green et al., Neurocognitive deficits and functional outcome in schizophrenia: Are we measuring the "right stuff"?, SCHIZO BULL, 26(1), 2000, pp. 119-136

Authors: Kwak, JS Mohney, SE Lin, JY Kern, RS
Citation: Js. Kwak et al., Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphologyand thermal stability, SEMIC SCI T, 15(7), 2000, pp. 756-760

Authors: Wolter, SD DeLucca, JM Mohney, SE Kern, RS Kuo, CP
Citation: Sd. Wolter et al., An investigation into the early stages of oxide growth on gallium nitride, THIN SOL FI, 371(1-2), 2000, pp. 153-160

Authors: Song, YK Zhou, H Diagne, M Nurmikko, AV Schneider, RP Kuo, CP Krames, MR Kern, RS Carter-Coman, C Kish, FA
Citation: Yk. Song et al., Optically pumped quasi-continuous wave violet vertical cavity surface emitting lasers, PHYS ST S-A, 180(1), 2000, pp. 387-389

Authors: Romano, LT Van de Walle, CG Ager, JW Gotz, W Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition, J APPL PHYS, 87(11), 2000, pp. 7745-7752

Authors: Song, YK Zhou, H Diagne, M Nurmikko, AV Schneider, RP Kuo, CP Krames, MR Kern, RS Carter-Coman, C Kish, FA
Citation: Yk. Song et al., A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser, APPL PHYS L, 76(13), 2000, pp. 1662-1664

Authors: Wolter, SD Luther, BP Mohney, SE Karlicek, RF Kern, RS
Citation: Sd. Wolter et al., Thermally stable ZrN/Zr/n-GaN ohmic contacts, EL SOLID ST, 2(3), 1999, pp. 151-153

Authors: Gotz, W Kern, RS Chen, CH Liu, H Steigerwald, DA Fletcher, RM
Citation: W. Gotz et al., Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes, MAT SCI E B, 59(1-3), 1999, pp. 211-217

Authors: Romano, LT Van de Walle, CG Krusor, BS Lau, R Ho, J Schmidt, T Ager, JW Gotz, W Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on the strain and defect structure of GaN thin films, PHYSICA B, 274, 1999, pp. 50-53

Authors: Kern, RS Green, MF Marshall, BD Wirshing, WC Wirshing, D McGurk, SR Marder, SR Mintz, J
Citation: Rs. Kern et al., Risperidone versus haloperidol on secondary memory: Can newer medications aid learning?, SCHIZO BULL, 25(2), 1999, pp. 223-232

Authors: King, SW Kern, RS Benjamin, MC Barnak, JP Nemanich, RJ Davis, RF
Citation: Sw. King et al., Chemical vapor cleaning of 6H-SiC surfaces, J ELCHEM SO, 146(9), 1999, pp. 3448-3454

Authors: Chen, Y Schneider, R Wang, SY Kern, RS Chen, CH Kuo, CP
Citation: Y. Chen et al., Dislocation reduction in GaN thin films via lateral overgrowth from trenches, APPL PHYS L, 75(14), 1999, pp. 2062-2063

Authors: Song, YK Diagne, M Zhou, H Nurmikko, AV Carter-Coman, C Kern, RS Kish, FA Krames, MR
Citation: Yk. Song et al., A vertical injection blue light emitting diode in substrate separated InGaN heterostructures, APPL PHYS L, 74(24), 1999, pp. 3720-3722

Authors: Song, YK Zhou, H Diagne, M Ozden, I Vertikov, A Nurmikko, AV Carter-Coman, C Kern, RS Kish, FA Krames, MR
Citation: Yk. Song et al., A vertical cavity light emitting InGaN quantum well heterostructure, APPL PHYS L, 74(23), 1999, pp. 3441-3443
Risultati: 1-15 |