Results: 1-24 |
Results: 24

Authors: Park, S Tenne, DA Salvan, G Kampen, TU Zahn, DRT
Citation: S. Park et al., Optical spectroscopy during growth of PTCDA-C-60 complex thin films, J PHYS CH B, 105(48), 2001, pp. 12076-12081

Authors: Paraian, AM Rossow, U Park, S Salvan, G Friedrich, M Kampen, TU Zahn, DRT
Citation: Am. Paraian et al., Optical anisotropy of organic layers on GaAs(001), J VAC SCI B, 19(4), 2001, pp. 1658-1661

Authors: Salvan, G Tenne, DA Kampen, TU Scholz, R Jungnickel, G Frauenheim, T Zahn, DRT
Citation: G. Salvan et al., Raman spectroscopy: a powerful tool for characterisation of Ag/3,4,9,10-perylene-tetracarboxylic-dianhydride/GaAs heterostructures, APPL SURF S, 179(1-4), 2001, pp. 113-117

Authors: Park, S Kampen, TU Braun, W Zahn, DRT
Citation: S. Park et al., Photoemission study of Mg/PTCDA/Se-GaAs Schottky contacts, APPL SURF S, 175, 2001, pp. 249-254

Authors: Kampen, TU Salvan, G Tenne, D Scholz, R Zahn, DRT
Citation: Tu. Kampen et al., Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus silicon, APPL SURF S, 175, 2001, pp. 326-331

Authors: Salvan, G Himcinschi, C Kobitski, AY Friedrich, M Wagner, HP Kampen, TU Zahn, DRT
Citation: G. Salvan et al., Crystallinity of PTCDA films on silicon derived via optical spectroscopic measurements, APPL SURF S, 175, 2001, pp. 363-368

Authors: Evans, DA Steiner, HJ Middleton, R Jones, TS Chen, CH Horn, K Park, S Kampen, TU Tenne, D Zahn, DRT Patchett, A McGovern, IT
Citation: Da. Evans et al., In-situ monitoring of the growth of copper phthalocyanine films on InSb byorganic molecular beam deposition, APPL SURF S, 175, 2001, pp. 374-378

Authors: Kampen, TU Rossow, U Schumann, M Park, S Zahn, DRT
Citation: Tu. Kampen et al., Reflectance anisotropy spectroscopy of the growth of perylene-3,4,9,10-tetracarboxylic dianhydride on chalcogen passivated GaAs(001) surfaces, J VAC SCI B, 18(4), 2000, pp. 2077-2081

Authors: Scholz, R Kobitski, AY Kampen, TU Schreiber, M Zahn, DRT Jungnickel, G Frauenheim, T
Citation: R. Scholz et al., Resonant Raman spectroscopy of organic semiconductors, PHYS ST S-B, 221(1), 2000, pp. 541-544

Authors: Park, S Querner, T Kampen, TU Braun, W Zahn, DRT
Citation: S. Park et al., The interface formation of PTCDA on Se-modified GaAs(100) surfaces, APPL SURF S, 166(1-4), 2000, pp. 376-379

Authors: Kampen, TU Salvan, G Friedrich, M Tenne, DA Park, S Zahn, DRT
Citation: Tu. Kampen et al., Optical characterisation of PTCDA films grown on passivated semiconductor substrates, APPL SURF S, 166(1-4), 2000, pp. 387-391

Authors: Tenne, DA Park, S Kampen, TU Das, A Scholz, R Zahn, DRT
Citation: Da. Tenne et al., Single crystals of the organic semiconductor perylene tetracarboxylic dianhydride studied by Raman spectroscopy, PHYS REV B, 61(21), 2000, pp. 14564-14569

Authors: Scholz, R Kobitski, AY Kampen, TU Schreiber, M Zahn, DRT Jungnickel, G Elstner, M Sternberg, M Frauenheim, T
Citation: R. Scholz et al., Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films, PHYS REV B, 61(20), 2000, pp. 13659-13669

Authors: Zahn, DRT Kampen, TU Hohenecker, S Braun, W
Citation: Drt. Zahn et al., GaAs surface passivation by ultra-high vacuum deposition of chalcogen atoms, VACUUM, 57(2), 2000, pp. 139-144

Authors: Morozov, AO Kampen, TU Zahn, DRT
Citation: Ao. Morozov et al., PTCDA film formation on Si(111): H-1 x 1 surface: total current spectroscopy monitoring, SURF SCI, 446(3), 2000, pp. 193-198

Authors: Park, S Kampen, TU Zahn, DRT Braun, W
Citation: S. Park et al., Organic probe for inhomogeneous band bending, APPL PHYS L, 76(22), 2000, pp. 3200-3202

Authors: Janzen, O Hahn, C Kampen, TU Monch, W
Citation: O. Janzen et al., Explanation of multiplet spots in low-energy electron diffraction patternsof clean GaN{0001}-1x1 surfaces, EUR PHY J B, 7(1), 1999, pp. 1-4

Authors: Kaiser, R Friedrich, M Schmitz-Hubsch, T Sellam, F Kampen, TU Leo, K Zahn, DRT
Citation: R. Kaiser et al., Ultra-thin PTCDA layers studied by optical spectroscopies, FRESEN J AN, 363(2), 1999, pp. 189-192

Authors: Lubbe, M Evans, DA Kampen, TU Okano, K Zahn, DRT
Citation: M. Lubbe et al., Angular-resolved study of secondary-electron emission from NEA diamond surfaces, DIAM RELAT, 8(8-9), 1999, pp. 1485-1489

Authors: Werheit, H Schmechel, R Kuhlmann, U Kampen, TU Monch, W Rau, A
Citation: H. Werheit et al., On the reliability of the Raman spectra of boron-rich solids, J ALLOY COM, 291(1-2), 1999, pp. 28-32

Authors: Kampen, TU Tenne, DA Park, S Salvan, G Scholz, R Zahn, DRT
Citation: Tu. Kampen et al., Raman monitoring of organic semiconductor heterostructure formation, PHYS ST S-B, 215(1), 1999, pp. 431-434

Authors: Hohenecker, S Kampen, TU Werninghaus, T Zahn, DRT Braun, W
Citation: S. Hohenecker et al., The influence of sulfur on the In/GaAs(100) interface formation, APPL SURF S, 142(1-4), 1999, pp. 28-32

Authors: Hohenecker, S Kampen, TU Braun, W Zahn, DRT
Citation: S. Hohenecker et al., Influence of sulfur on the Sb-GaAs(001) interface, SURF SCI, 435, 1999, pp. 347-351

Authors: Lubbe, M Bressler, PR Braun, W Kampen, TU Zahn, DRT
Citation: M. Lubbe et al., Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001), J APPL PHYS, 86(1), 1999, pp. 209-213
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