Results: 1-6 |
Results: 6

Authors: HIRATA A MACHIDA K MAEYAMA S WATANABE Y KYURAGI H
Citation: A. Hirata et al., DIFFUSION BARRIER MECHANISM OF EXTREMELY THIN TUNGSTEN SILICON-NITRIDE FILM FORMED BY ECR PLASMA NITRIDATION, JPN J A P 1, 37(3B), 1998, pp. 1251-1255

Authors: MACHIDA K KYURAGI H AKIYA H IMAI K TOUNAI A NAKASHIMA A
Citation: K. Machida et al., NOVEL GLOBAL PLANARIZATION TECHNOLOGY FOR INTERLAYER DIELECTRICS USING SPIN ON GLASS-FILM TRANSFER AND HOT-PRESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1093-1097

Authors: KYURAGI H
Citation: H. Kyuragi, ROLE OF LOW-ENERGY SECONDARY ELECTRONS IN SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2644-2652

Authors: HIRATA A HOSOYA T MACHIDA K KYURAGI H AKIYA H
Citation: A. Hirata et al., ELECTRICAL CHARACTERISTICS OF A WSIX CONTACT ELECTRODE WITH A WSIXN DIFFUSION BARRIER FORMED BY USING ELECTRON-CYCLOTRON-RESONANCE PLASMA NITRIDATION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3993-3998

Authors: KYURAGI H
Citation: H. Kyuragi, CHARACTERIZATION OF SILICON-NITRIDE FILMS FORMED BY SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3305-3315

Authors: KONAKA S KYURAGI H KOBAYASHI T DEGUCHI K YAMAMOTO E OHKI S YAMAMOTO Y
Citation: S. Konaka et al., A 0.25-MU-M BICMOS TECHNOLOGY USING SOR X-RAY-LITHOGRAPHY, IEICE transactions on electronics, E77C(3), 1994, pp. 355-361
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