Results: 1-8 |
Results: 8

Authors: BROWN RA KONONCHUK O ROZGONYI GA KOVESHNIKOV S KNIGHTS AP SIMPSON PJ GONZALEZ F
Citation: Ra. Brown et al., IMPURITY GETTERING TO SECONDARY DEFECTS CREATED BY MEV ION-IMPLANTATION IN SILICON, Journal of applied physics, 84(5), 1998, pp. 2459-2465

Authors: KOVESHNIKOV S KONONCHUK O
Citation: S. Koveshnikov et O. Kononchuk, GETTERING OF CU AND NI IN MEGA-ELECTRON-VOLT ION-IMPLANTED EPITAXIAL SILICON, Applied physics letters, 73(16), 1998, pp. 2340-2342

Authors: BROWN RA KONONCHUK O RADZIMSKI Z ROZGONYI GA GONZALEZ F
Citation: Ra. Brown et al., THE EFFECT OF OXYGEN ON SECONDARY DEFECT FORMATION IN MEV SELF-IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 55-58

Authors: BROWN RA KONONCHUK O BONDARENKO I ROMANOWSKI A RADZIMSKI Z ROZGONYI GA GONZALEZ F
Citation: Ra. Brown et al., METALLIC IMPURITY GETTERING AND SECONDARY DEFECT FORMATION IN MEGAELECTRON VOLT SELF-IMPLANTED CZOCHRALSKI AND FLOAT-ZONE SILICON, Journal of the Electrochemical Society, 144(8), 1997, pp. 2872-2881

Authors: BEAMAN KL AGARWAL A KONONCHUK O KOVESHNIKOV S BONDARENKO I ROZGONYI GA
Citation: Kl. Beaman et al., GETTERING OF IRON IN SILICON-ON-INSULATOR WAFERS, Applied physics letters, 71(8), 1997, pp. 1107-1109

Authors: BONDARENKO I KIRK H KONONCHUK O ROZGONYI G
Citation: I. Bondarenko et al., CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 32-37

Authors: BONDARENKO I KONONCHUK O SIROTKIN V YAKIMOV E
Citation: I. Bondarenko et al., RECONSTRUCTION OF RECOMBINATION PROPERTIES OF EXTENDED DEFECTS IN SI, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 270-273

Authors: KONONCHUK O BROWN RA RADZIMSKI Z ROZGONYI GA GONZALEZ F
Citation: O. Kononchuk et al., GETTERING OF FE TO BELOW 10(10) CM(-3) IN MEV SELF-IMPLANTED CZOCHRALSKI AND FLOAT-ZONE SILICON, Applied physics letters, 69(27), 1996, pp. 4203-4205
Risultati: 1-8 |