Results: 1-6 |
Results: 6

Authors: Ge, PW Nishinaga, T Li, CR Huo, CR Nakamura, T Huang, WD Voloshin, AE Lomov, AA
Citation: Pw. Ge et al., Growth of GaSb single crystal in space, SCI CHINA A, 44(6), 2001, pp. 762-769

Authors: Huo, CR Zhu, ZH Ge, PW Chen, D
Citation: Cr. Huo et al., The stability of the crystal growth face in a model for crystal growth from solution under microgravity, ACT PHY C E, 50(3), 2001, pp. 377-382

Authors: Zhu, ZH Ge, PW Huo, CR Chen, D Li, CR
Citation: Zh. Zhu et al., Stable shape of crystal growth face in crystallization from solution undermicrogravity, J CRYST GR, 224(1-2), 2001, pp. 155-164

Authors: Liu, YC Chen, WC Ge, PW Huo, CR
Citation: Yc. Liu et al., Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity, CHIN PHYS L, 17(10), 2000, pp. 775-777

Authors: Liu, YC Chen, WC Huo, CR Ge, PW
Citation: Yc. Liu et al., Interface shape and concentration distribution in crystallization from solution under microgravity, ACT PHY C E, 8(12), 1999, pp. 881-888

Authors: Zhu, ZH Ge, PW Huo, CR
Citation: Zh. Zhu et al., Influence of interface kinetics on the relaxation behavior in solution system for crystal growth under microgravity, ACT PHY C E, 7(11), 1998, pp. 801-809
Risultati: 1-6 |