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Results: 1-25/33

Authors: TSUCHIYA H SUNABA K MINAMI M SUEMASU T HASEGAWA F
Citation: H. Tsuchiya et al., INFLUENCE OF AS AUTODOPING FROM GAAS SUBSTRATES ON THICK CUBIC GAN GROWTH BY HALIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 37(5B), 1998, pp. 568-570

Authors: SUEMASU T TAKAKURA K TANAKA M FUJII T HASEGAWA F
Citation: T. Suemasu et al., MAGNETOTRANSPORT PROPERTIES OF A SINGLE-CRYSTALLINE BETA-FESI2 LAYER GROWN ON SI(001) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY, JPN J A P 2, 37(3B), 1998, pp. 333-335

Authors: YAGUCHI T YONEMURA S TSUCHIYA H SHIMOYAMA N SUEMASU T HASEGAWA F
Citation: T. Yaguchi et al., DEPENDENCE OF GAN MOMBE GROWTH ON NITROGEN-SOURCE - ECR PLASMA GUN STRUCTURE AND MONOMETHYL-HYDRAZINE, Journal of crystal growth, 190, 1998, pp. 380-384

Authors: TSUCHIYA H SUNABA K SUEMASU T HASEGAWA F
Citation: H. Tsuchiya et al., GROWTH CONDITION DEPENDENCE OF GAN CRYSTAL-STRUCTURE ON (001)GAAS BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 395-400

Authors: YONEMURA S YAGUCHI T TSUCHIYA H SHIMOYAMA N SUEMASU T HASEGAWA F
Citation: S. Yonemura et al., COMPARISON BETWEEN MONOMETHYL HYDRAZINE AND ECR PLASMA ACTIVATED NITROGEN AS A NITROGEN-SOURCE FOR CBE GROWTH OF GAN, Journal of crystal growth, 188(1-4), 1998, pp. 81-85

Authors: TANAKA M KUMAGAI Y SUEMASU T HASEGAWA F
Citation: M. Tanaka et al., FORMATION OF BETA-FESI2 LAYERS ON SI(001) SUBSTRATES, JPN J A P 1, 36(6A), 1997, pp. 3620-3624

Authors: SUEMASU T YAMAMOTO M TAKAKURA K HASHIMOTO S KUMAGAI Y HASEGAWA F
Citation: T. Suemasu et al., SI MOLECULAR-BEAM EPITAXIAL-GROWTH OVER AN ATOMIC-LAYER BORON ABSORBED SI(001) SUBSTRATE AND ITS ELECTRICAL-PROPERTIES, JPN J A P 1, 36(12A), 1997, pp. 7146-7151

Authors: SUEMASU T TANAKA M FUJII T HASHIMOTO S KUMAGAI Y HASEGAWA F
Citation: T. Suemasu et al., AGGREGATION OF MONOCRYSTALLINE BETA-FESI2 BY ANNEALING AND BY SI OVERLAYER GROWTH, JPN J A P 2, 36(9AB), 1997, pp. 1225-1228

Authors: TSUCHIYA H SUNABA K YONEMURA S SUEMASU T HASEGAWA F
Citation: H. Tsuchiya et al., CUBIC DOMINANT GAN GROWTH ON (001)GAAS SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 36(1AB), 1997, pp. 1-3

Authors: ESUMI H CHIN K KURASHIMA Y HASEGAWA F OGURA T YONEDA M OZAWA T
Citation: H. Esumi et al., REVERSIBLE CELL-CYCLE ARREST WITH CONCOMITANT P21 WAF1 OVEREXPRESSIONAND MITOCHONDRIAL DESTRUCTION BY NITRIC-OXIDE/, Biochemistry and molecular biology international, 42(4), 1997, pp. 779-787

Authors: TANAKA M KUMAGAI Y SUEMASU T HASEGAWA F
Citation: M. Tanaka et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 LAYERS ON SI(001), Applied surface science, 117, 1997, pp. 303-307

Authors: KANEKO H ARIMOTO C YAMAGAMI A HASEGAWA F OTUKA M NEMOTO Y TAKAHASHI H HAYASHI T IWASHIGE H MARUO T
Citation: H. Kaneko et al., A STUDY OF THE RELATIONSHIP BETWEEN CLINICAL-EVALUATION AND THE SURFACE ELECTROMYOGRAPHY OF BLEPHALOSPASM, Investigative ophthalmology & visual science, 38(4), 1997, pp. 573-573

Authors: TSUCHIYA H TAKEUCHI A MATSUO A HASEGAWA F
Citation: H. Tsuchiya et al., DEPENDENCE OF THE HVPE GAN EPILAYER ON GAN BUFFER LAYER FOR GAN DIRECT GROWTH ON (001)GAAS SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 333-338

Authors: TSUCHIYA H AKAMATSU M ISHIDA M HASEGAWA F
Citation: H. Tsuchiya et al., LAYER-BY-LAYER GROWTH OF GAN ON GAAS SUBSTRATES BY ALTERNATE SUPPLY OF GACL3 AND NH3, JPN J A P 2, 35(6B), 1996, pp. 748-750

Authors: MORI R KUMAGAI Y TANAKA M YAMAMOTO M HASEGAWA F
Citation: R. Mori et al., STABILITY OF SI(111)ROOT-3X-ROOT-3R30-DEGREES-B SURFACE IN AIR, JPN J A P 2, 35(4B), 1996, pp. 465-467

Authors: KUMAGAI Y ISHIMOTO K MORI R TEE KM ISHIBASHI T KAWABE M HASEGAWA F
Citation: Y. Kumagai et al., 4-MONOLAYER-HEIGHT LAYER-BY-LAYER GROWTH AND INCREASE OF THE CRITICALTHICKNESS OF GE HETEROEPITAXY ON BORON-PREADSORBED SI(111) SURFACE, JPN J A P 2, 35(4B), 1996, pp. 476-478

Authors: ISURUGI K HASEGAWA F SHIBAHARA N MORI H SHIMA H HARADA N HASEGAWA T HONMA S IMASAKI K NAWATA A
Citation: K. Isurugi et al., INCOMPLETE TESTICULAR FEMINIZATION SYNDROME - STUDIES ON ANDROGEN RECEPTOR(AR) FUNCTION, AR GENE ANALYSIS, AND AROMATASE ACTIVITIES AT PUBERTY AND LONG-TERM OBSERVATIONS OF CLINICAL AND HORMONAL FEATURES FROM INFANCY TO PUBERTY, Endocrine journal, 43(5), 1996, pp. 557-564

Authors: KUMAGAI Y MORI R ISHIMOTO K PARK KH HASEGAWA F
Citation: Y. Kumagai et al., GROWTH TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION AND ELECTRICAL-PROPERTIES OF BORON DELTA-DOPED STRUCTURES GROWN BY SI MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(9A), 1995, pp. 4593-4598

Authors: KUMAGAI Y ISHIMOTO K HASHIMOTO S PARK KH HASEGAWA F
Citation: Y. Kumagai et al., COMPARISON OF PLANAR TO COLUMNAR TRANSFORMATION OF PTSI LAYERS ON SI(001) AND SI(111) SUBSTRATES IN THE SI CAPPING LAYER GROWTH-PROCESS, JPN J A P 1, 34(9A), 1995, pp. 4621-4626

Authors: ASHIDA T TSUBAKI K HASEGAWA F URASE F ISHIKAWA H HAZE S HORIUCHI A
Citation: T. Ashida et al., CHANGE OF FECAL FLORA IN PATIENTS WITH ALLOGENEIC BONE-MARROW TRANSPLANTATION - COMPARISON BETWEEN AMPHOTERICINE-B AND FLUCONAZOLE, Experimental hematology, 23(8), 1995, pp. 860-860

Authors: TSUCHIYA H TAKEUCHI A KURIHARA M HASEGAWA F
Citation: H. Tsuchiya et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON (100)GAAS SUBSTRATES USING TRIETHYLGALLIUM AND MONOMETHYLHYDRAZINE, Journal of crystal growth, 152(1-2), 1995, pp. 21-27

Authors: KUMAGAI Y ISHIMOTO K MORI R HASEGAWA F
Citation: Y. Kumagai et al., TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION IN SI MOLECULAR-BEAM EPITAXIAL-GROWTH ON THE SI(111) ROOT-3X-ROOT-3-B SURFACE, Journal of crystal growth, 150(1-4), 1995, pp. 989-993

Authors: TSUCHIYA H OKAHISA T HASEGAWA F OKUMURA H YOSHIDA S
Citation: H. Tsuchiya et al., HOMOEPITAXIAL GROWTH OF CUBIC GAN BY HYDRIDE VAPOR-PHASE EPITAXY ON CUBIC GAN GAAS SUBSTRATES PREPARED WITH GAS-SOURCE MOLECULAR-BEAM EPITAXY/, JPN J A P 1, 33(4A), 1994, pp. 1747-1752

Authors: TSUCHIYA H HASEGAWA F OKUMURA H YOSHIDA S
Citation: H. Tsuchiya et al., COMPARISON OF HYDRIDE VAPOR-PHASE EPITAXY OF GAN LAYERS ON CUBIC GAN (100)GAAS AND HEXAGONAL GAN/(111)GAAS SUBSTRATES/, JPN J A P 1, 33(12A), 1994, pp. 6448-6453

Authors: KUMAGAI Y MORI R ISHIMOTO K HASEGAWA F
Citation: Y. Kumagai et al., INFLUENCE OF BORON ADSORPTION OVER SI(111) SURFACE ON SI MOLECULAR-BEAM EPITAXIAL-GROWTH STUDIES BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, JPN J A P 2, 33(6B), 1994, pp. 120000817-120000819
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