Results: 1-5 |
Results: 5

Authors: Johnson, SR Chaparro, S Wang, J Samal, N Cao, Y Chen, ZB Navarro, C Xu, J Yu, SQ Smith, DJ Guo, CZ Dowd, P Braun, W Zhang, YH
Citation: Sr. Johnson et al., GaAs-substrate-based long-wave active materials with type-II band alignments, J VAC SCI B, 19(4), 2001, pp. 1501-1504

Authors: Guo, CZ Chen, SL Zhang, YH
Citation: Cz. Guo et al., Shortwave limit of infrared intersubband quantum cascade lasers, J INF M W, 20(1), 2001, pp. 1-6

Authors: Johnson, SR Dowd, P Braun, W Koelle, U Ryu, CM Beaudoin, M Guo, CZ Zhang, YH
Citation: Sr. Johnson et al., Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs, J VAC SCI B, 18(3), 2000, pp. 1545-1548

Authors: Braun, W Dowd, P Guo, CZ Chen, SL Ryu, CM Koelle, U Johnson, SR Zhang, YH Tomm, JW Elsasser, T Smith, DJ
Citation: W. Braun et al., Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100-1550 nm range, J APPL PHYS, 88(5), 2000, pp. 3004-3014

Authors: Dowd, P Braun, W Smith, DJ Ryu, CM Guo, CZ Chen, SL Koelle, U Johnson, SR Zhang, YH
Citation: P. Dowd et al., Long wavelength (1.3 and 1.5 mu m) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs, APPL PHYS L, 75(9), 1999, pp. 1267-1269
Risultati: 1-5 |