Results: 1-24 |
Results: 24

Authors: Leibiger, G Gottschalch, V Schubert, M
Citation: G. Leibiger et al., Phonon modes of InxGa1-xAs1-yNy measured by far infrared spectroscopic ellipsometry, PHYS ST S-B, 228(1), 2001, pp. 259-262

Authors: Leibiger, G Gottschalch, V Schwabe, R Benndorf, G Schubert, M
Citation: G. Leibiger et al., Phonon modes and critical points of GaPN, PHYS ST S-B, 228(1), 2001, pp. 279-282

Authors: Hofmann, T Leibiger, G Gottschalch, V Pietzonka, I Schubert, M
Citation: T. Hofmann et al., Infrared dielectric function and phonon modes of highly disordered (AlxGa1-x)(0.52)In0.48P - art. no. 155206, PHYS REV B, 6415(15), 2001, pp. 5206

Authors: Gerhardt, M Kirpal, G Schwabe, R Benndorf, G Gottschalch, V
Citation: M. Gerhardt et al., The influence of alternative group-V sources on heterointerface quality inthe system GaInAs(P) on InP, THIN SOL FI, 392(1), 2001, pp. 85-90

Authors: Leibiger, G Gottschalch, V Schubert, M
Citation: G. Leibiger et al., Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry, J APPL PHYS, 90(12), 2001, pp. 5951-5958

Authors: Leibiger, G Gottschalch, V Rheinlander, B Sik, J Schubert, M
Citation: G. Leibiger et al., Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths, J APPL PHYS, 89(9), 2001, pp. 4927-4938

Authors: Sik, J Schubert, M Leibiger, G Gottschalch, V Wagner, G
Citation: J. Sik et al., Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry, J APPL PHYS, 89(1), 2001, pp. 294-305

Authors: Leibiger, G Gottschalch, V Kasic, A Schubert, M
Citation: G. Leibiger et al., Phonon modes of GaNyP1-y (0.006 <= y <= 0.0285) measured by midinfrared spectroscopic ellipsometry, APPL PHYS L, 79(21), 2001, pp. 3407-3409

Authors: Sik, J Schubert, M Hofmann, T Gottschalch, V
Citation: J. Sik et al., Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry, MRS I J N S, 5(3), 2000, pp. 1-8

Authors: Pietzonka, I Sass, T Benndorf, G Franzheld, R Gottschalch, V
Citation: I. Pietzonka et al., MOVPE growth and characterisation of Zn-doped (GaIn)P layers with respect to surface structure and ordering, CRYST RES T, 35(3), 2000, pp. 271-278

Authors: Pietzonka, I Sass, T Gottschalch, V
Citation: I. Pietzonka et al., Systematic study of the surface morphology of ordered (GaIn)P, APPL SURF S, 165(1), 2000, pp. 60-69

Authors: Kovac, J Pudis, D Satka, A Janos, L Jakabovic, J Schwabe, R Gottschalch, V Benndorf, G Rheinlander, B
Citation: J. Kovac et al., Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAsmonolayer multiquantum-well structures, MICROEL ENG, 51-2, 2000, pp. 309-316

Authors: Nassauer, S Kasic, A Rheinlander, B Gottschalch, V Kovac, J Kvietkova, J Benndorf, G
Citation: S. Nassauer et al., Excitonic effects of InAs monolayers in GaAs/AlGaAs-microcavities, MICROEL ENG, 51-2, 2000, pp. 401-407

Authors: Pickenhain, R Schmidt, H Gottschalch, V
Citation: R. Pickenhain et al., Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs, J APPL PHYS, 88(2), 2000, pp. 948-959

Authors: Leibiger, G Gottschalch, V Rheinlander, B Sik, J Schubert, M
Citation: G. Leibiger et al., Nitrogen dependence of the GaAsN interband critical points E-1 and E-1+Delta(1) determined by spectroscopic ellipsometry, APPL PHYS L, 77(11), 2000, pp. 1650-1652

Authors: Senz, S Kastner, G Gosele, U Gottschalch, V
Citation: S. Senz et al., Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate, APPL PHYS L, 76(6), 2000, pp. 703-705

Authors: Sik, J Schubert, M Leibiger, G Gottschalch, V Kirpal, G Humlicek, J
Citation: J. Sik et al., Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry, APPL PHYS L, 76(20), 2000, pp. 2859-2861

Authors: Schubert, M Hofmann, T Rheinlander, B Pietzonka, I Sass, T Gottschalch, V Woollam, JA
Citation: M. Schubert et al., Near-band-gap CuPt-order-induced birefringence in Al0.48Ga0.52InP2, PHYS REV B, 60(24), 1999, pp. 16618-16634

Authors: Sass, T Pietzonka, I Gottschalch, V Wagner, G
Citation: T. Sass et al., Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P, THIN SOL FI, 348(1-2), 1999, pp. 196-201

Authors: Kirpal, G Gerhardt, M Gottschalch, V Franzheld, R Semmelhack, HC
Citation: G. Kirpal et al., Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy, THIN SOL FI, 342(1-2), 1999, pp. 113-118

Authors: Franzheld, R Marschall, C Recker, C Wassermann, BC Schumann, H Benndorf, G Gottschalch, V
Citation: R. Franzheld et al., Cyclohexylphosphine: synthesis and application to metalorganic vapor-phaseepitaxy of InP, J CRYST GR, 206(1-2), 1999, pp. 51-59

Authors: Pietzonka, I Franzheld, R Sass, T Benndorf, G Schwabe, R Handschuh, M Gottschalch, V
Citation: I. Pietzonka et al., Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors, J CRYST GR, 196(1), 1999, pp. 33-40

Authors: Schubert, M Woollam, JA Leibiger, G Rheinlander, B Pietzonka, I Sass, T Gottschalch, V
Citation: M. Schubert et al., Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 <= x <=1) lattice matched to GaAs, J APPL PHYS, 86(4), 1999, pp. 2025-2033

Authors: Pietzonka, I Sass, T Franzheld, R Wagner, G Gottschalch, V
Citation: I. Pietzonka et al., Surface characterization of ordered (GaIn)P, J CRYST GR, 195(1-4), 1998, pp. 21-27
Risultati: 1-24 |