Results: 1-19 |
Results: 19

Authors: Kinoshita, S Yoshioka, A Park, YD Ishizashi, H Konno, M Funato, M Matsui, T Titani, K Yagi, H Matsumoto, M Fujimura, Y
Citation: S. Kinoshita et al., Upshaw-Schulman syndrome revisited: A concept of congenital thrombotic thrombocytopenic purpura, INT J HEMAT, 74(1), 2001, pp. 101-108

Authors: Tajiri, H Miyoshi, Y Funada, S Etani, Y Abe, J Onodera, T Goto, M Funato, M Ida, S Noda, C Nakayama, M Okada, S
Citation: H. Tajiri et al., Prospective study of mother-to-infant transmission of hepatitis C virus, PEDIAT INF, 20(1), 2001, pp. 10-14

Authors: Funato, M Fujita, S Fujita, S
Citation: M. Funato et al., Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001) - art. no. 165319, PHYS REV B, 6316(16), 2001, pp. 5319

Authors: Shiba, H Takayama, S Iwano, M Shimosato, H Funato, M Nakagawa, T Che, FS Suzuki, G Watanabe, M Hinata, K Isogai, A
Citation: H. Shiba et al., A pollen coat protein, SP11/SCR, determines the pollen S-specificity in the self-incompatibility of Brassica species, PLANT PHYSL, 125(4), 2001, pp. 2095-2103

Authors: Takayama, S Shimosato, H Shiba, H Funato, M Che, FS Watanabe, M Iwano, M Isogai, A
Citation: S. Takayama et al., Direct ligand-receptor complex interaction controls Brassica self-incompatibility, NATURE, 413(6855), 2001, pp. 534-538

Authors: Ogawa, M Funato, M Ishido, T Fujita, S Fujita, S
Citation: M. Ogawa et al., The role of growth rates and buffer layer structures for quality improvement of cubic GaN grown on GaAs, JPN J A P 2, 39(2A), 2000, pp. L69-L72

Authors: Ichiba, H Shintaku, H Fujimaru, M Hirai, C Okano, Y Funato, M
Citation: H. Ichiba et al., Bone mineral density of the lumbar spine in very-low-birth-weight infants:a longitudinal study, EUR J PED, 159(3), 2000, pp. 215-218

Authors: Ishido, T Funato, M Hamaguchi, A Fujita, S Fujita, S
Citation: T. Ishido et al., AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy, J CRYST GR, 221, 2000, pp. 280-285

Authors: Funato, M Fujita, S Fujita, S
Citation: M. Funato et al., Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures, J CRYST GR, 214, 2000, pp. 590-594

Authors: Ninomiya, S Yokoyama, Y Teraoka, M Mori, R Inoue, C Yamashita, S Tamai, H Funato, M Seino, Y
Citation: S. Ninomiya et al., A novel mutation (296 del G) of the SOX9 gene in a patient with campomelicsyndrome and sex reversal, CLIN GENET, 58(3), 2000, pp. 224-227

Authors: Funato, M Fujita, S Fujita, S
Citation: M. Funato et al., Integration of GaN with Si using a AuGe-mediated wafer bonding technique, APPL PHYS L, 77(24), 2000, pp. 3959-3961

Authors: Funato, M Ishido, T Hamaguchi, A Fujita, S Fujita, S
Citation: M. Funato et al., Single-phase hexagonal GaN grown on AlAs/GaAs(001), APPL PHYS L, 77(2), 2000, pp. 244-246

Authors: Funato, M Ishido, T Fujita, S Fujita, S
Citation: M. Funato et al., Six-bilayer periodic structures in GaN grown on GaAs(001), APPL PHYS L, 76(3), 2000, pp. 330-332

Authors: Funato, M Fujita, S Fujita, S
Citation: M. Funato et al., Energy states in ZnSe-GaAs heterovalent quantum structures, PHYS REV B, 60(24), 1999, pp. 16652-16659

Authors: Fujimoto, S Togari, H Banno, T Takashima, S Funato, M Yoshioka, H Ibara, S Tatsuno, M Hashimoto, K
Citation: S. Fujimoto et al., Correlation between magnetic resonance imaging and clinical profiles of periventricular leukomalacia, TOH J EX ME, 188(2), 1999, pp. 143-151

Authors: Funato, M Ogawa, M Ishido, T Fujita, S Fujita, S
Citation: M. Funato et al., MOVPE growth of high quality cubic GaN on GaAs: The role of growth rates, PHYS ST S-A, 176(1), 1999, pp. 509-512

Authors: Tachibana, H Ishido, T Ogawa, M Funato, M Fujita, S Fujita, S
Citation: H. Tachibana et al., Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN, J CRYST GR, 196(1), 1999, pp. 41-46

Authors: Funato, M Aoki, S Fujita, S Fujita, S
Citation: M. Funato et al., Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures, J APPL PHYS, 85(3), 1999, pp. 1514-1519

Authors: Nukeaw, J Fujiwara, Y Takeda, Y Funato, M Aoki, S Fujita, S Fujita, S
Citation: J. Nukeaw et al., Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance, THIN SOL FI, 334(1-2), 1998, pp. 11-14
Risultati: 1-19 |