Results: 1-6 |
Results: 6

Authors: Droopad, R Yu, Z Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296

Authors: Finder, J
Citation: J. Finder, Body of secrets: Anatomy of the ultra-secret National Security Agency fromthe Cold War through the dawn of a new century, NY TIMES R, 2001, pp. 8-9

Authors: Droopad, R Yu, ZY Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Wang, J Kaushik, V Ngyuen, BY Ooms, B
Citation: R. Droopad et al., Epitaxial oxides on silicon grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 936-943

Authors: Ramdani, J Droopad, R Yu, Z Curless, JA Overgaard, CD Finder, J Eisenbeiser, K Hallmark, JA Ooms, WJ Kaushik, V Alluri, P Pietambaram, S
Citation: J. Ramdani et al., Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy, APPL SURF S, 159, 2000, pp. 127-133

Authors: Gao, Y He, S Alluri, P Engelhard, M Lea, AS Finder, J Melnick, B Hance, RL
Citation: Y. Gao et al., Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganicchemical vapor deposition, J APPL PHYS, 87(1), 2000, pp. 124-132

Authors: Hallmark, J Yu, ZY Droopad, R Ramdani, J Curless, J Overgaard, C Finder, J Marshall, D Wang, J Ooms, B
Citation: J. Hallmark et al., Epitaxial BaTiO3 films on silicon for MFSFET applications, INTEGR FERR, 27(1-4), 1999, pp. 1085-1094
Risultati: 1-6 |