Results: 1-8 |
Results: 8

Authors: Droopad, R Yu, Z Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296

Authors: Hu, XM Yu, Z Curless, JA Droopad, R Eisenbeiser, K Edwards, JL Ooms, WJ Sarid, D
Citation: Xm. Hu et al., Comparative study of Sr and Ba adsorption on Si(100), APPL SURF S, 181(1-2), 2001, pp. 103-110

Authors: Droopad, R Yu, ZY Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Wang, J Kaushik, V Ngyuen, BY Ooms, B
Citation: R. Droopad et al., Epitaxial oxides on silicon grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 936-943

Authors: Eisenbeiser, K Huang, JH Salih, A Hadizad, P Pitts, B
Citation: K. Eisenbeiser et al., Manufacturable GaAsVFET for power switching applications, IEEE ELEC D, 21(4), 2000, pp. 144-145

Authors: Ramdani, J Droopad, R Yu, Z Curless, JA Overgaard, CD Finder, J Eisenbeiser, K Hallmark, JA Ooms, WJ Kaushik, V Alluri, P Pietambaram, S
Citation: J. Ramdani et al., Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy, APPL SURF S, 159, 2000, pp. 127-133

Authors: Chambers, SA Liang, Y Yu, Z Droopad, R Ramdani, J Eisenbeiser, K
Citation: Sa. Chambers et al., Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions, APPL PHYS L, 77(11), 2000, pp. 1662-1664

Authors: Eisenbeiser, K Finder, JM Yu, Z Ramdani, J Curless, JA Hallmark, JA Droopad, R Ooms, WJ Salem, L Bradshaw, S Overgaard, CD
Citation: K. Eisenbeiser et al., Field effect transistors with SrTiO3 gate dielectric on Si, APPL PHYS L, 76(10), 2000, pp. 1324-1326

Authors: Eisenbeiser, K Droopad, R Huang, JH
Citation: K. Eisenbeiser et al., Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substrates, IEEE ELEC D, 20(10), 1999, pp. 507-509
Risultati: 1-8 |