Results: 1-20 |
Results: 20

Authors: Niikura, C Kim, SY Drevillon, B Poissant, Y Cabarrocas, PRI Bouree, JE
Citation: C. Niikura et al., Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD, THIN SOL FI, 395(1-2), 2001, pp. 178-183

Authors: Brenot, R Vanderhaghen, R Drevillon, B Cabarrocas, PRI Rogel, R Mohammed-Brahim, T
Citation: R. Brenot et al., Transport mechanisms in hydrogenated microcrystalline silicon, THIN SOL FI, 383(1-2), 2001, pp. 53-56

Authors: Kaplan, B Ledanois, G Drevillon, B
Citation: B. Kaplan et al., Mueller matrix of dense polystyrene latex sphere suspensions: measurementsand Monte Carlo simulation, APPL OPTICS, 40(16), 2001, pp. 2769-2777

Authors: Hofrichter, A Constantinescu, A Benayoun, S Bulkin, P Drevillon, B
Citation: A. Hofrichter et al., Study of the mechanical behavior of plasma-deposited silica films on polycarbonate and steel, J VAC SCI A, 18(4), 2000, pp. 2012-2016

Authors: Heitz, T Hofrichter, A Bulkin, P Drevillon, B
Citation: T. Heitz et al., Real time control of plasma deposited optical filters by multiwavelength ellipsometry, J VAC SCI A, 18(4), 2000, pp. 1303-1307

Authors: Brenot, R Drevillon, B Bulkin, P Roca i Cabarrocas, P Vanderhaghen, R
Citation: R. Brenot et al., Process monitoring of semiconductor thin films and interfaces by spectroellipsometry, APPL SURF S, 154, 2000, pp. 283-290

Authors: Brenot, R Vanderhaghen, R Drevillon, B Cabarrocas, PRI
Citation: R. Brenot et al., Measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 336-340

Authors: Kaplan, B Compain, E Drevillon, B
Citation: B. Kaplan et al., Phase-modulated Mueller ellipsometry characterization of scattering by latex sphere suspensions, APPL OPTICS, 39(4), 2000, pp. 629-636

Authors: Hofrichter, A Bulkin, P Drevillon, B
Citation: A. Hofrichter et al., In situ spectroellipsometric analysis of plasma treatments of polymers forthe adhesion improvement of silica thin films, VIDE, 54(294), 1999, pp. 393-397

Authors: Heitz, T Drevillon, B Godet, C
Citation: T. Heitz et al., Improvement of sensitivity in the analysis of vibrational properties of thin films by use of in situ ellipsometry: applications to hydrogenated amorphous carbon films, J OPT SOC B, 16(7), 1999, pp. 1044-1048

Authors: Hofrichter, A Bulkin, P Drevillon, B
Citation: A. Hofrichter et al., Plasma enhanced chemical vapour deposition of SiOxNy in an integrated distributed electron cyclotron resonance reactor, APPL SURF S, 142(1-4), 1999, pp. 447-450

Authors: Heitz, T Godet, C Bouree, JE Drevillon, B Conde, JP
Citation: T. Heitz et al., Radiative and nonradiative recombination in polymerlike alpha-C : H films, PHYS REV B, 60(8), 1999, pp. 6045-6052

Authors: Bulkin, P Hofrichter, A Brenot, R Drevillon, B
Citation: P. Bulkin et al., Deposition of microcrystalline silicon in an integrated distributed electron cyclotron resonance PECVD reactor, THIN SOL FI, 337(1-2), 1999, pp. 37-40

Authors: Brenot, R Vanderhaghen, R Drevillon, B Mohammed-Brahim, T Cabarrocas, PR
Citation: R. Brenot et al., Contactless electronic transport analysis of microcrystalline silicon, THIN SOL FI, 337(1-2), 1999, pp. 63-66

Authors: Godet, C Heitz, T Bouree, JE Bouchet, B Dixmier, J Drevillon, B
Citation: C. Godet et al., Correlation between luminescence properties and microstructure of hydrogenated amorphous carbon films investigated by X-ray diffraction and infrared ellipsometry, SOL ST COMM, 111(6), 1999, pp. 293-298

Authors: Cabarrocas, PRI Brenot, R Bulkin, P Vanderhaghen, R Drevillon, B French, I
Citation: Pri. Cabarrocas et al., Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique, J APPL PHYS, 86(12), 1999, pp. 7079-7082

Authors: Heitz, T Drevillon, B Godet, C Bouree, JE
Citation: T. Heitz et al., C-H bonding of polymer-like hydrogenated amorphous carbon films investigated by in-situ infrared ellipsometry, CARBON, 37(5), 1999, pp. 771-775

Authors: Brenot, R Vanderhaghen, R Drevillon, B Cabarrocas, PRI
Citation: R. Brenot et al., Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth, APPL PHYS L, 74(1), 1999, pp. 58-60

Authors: Compain, E Poirier, S Drevillon, B
Citation: E. Compain et al., General and self-consistent method for the calibration of polarization modulators, polarimeters, and Mueller-matrix ellipsometers, APPL OPTICS, 38(16), 1999, pp. 3490-3502

Authors: Heitz, T Drevillon, B Godet, C Bouree, JE
Citation: T. Heitz et al., Quantitative study of C-H bonding in polymerlike amorphous carbon films using in situ infrared ellipsometry, PHYS REV B, 58(20), 1998, pp. 13957-13973
Risultati: 1-20 |