Results: 1-15 |
Results: 15

Authors: Parala, H Devi, A Wohlfart, A Winter, M Fischer, RA
Citation: H. Parala et al., An efficient chemical solution deposition method for epitaxial gallium nitride layers using a single-molecule precursor, ADV FUNCT M, 11(3), 2001, pp. 224-228

Authors: Parala, H Devi, A Rogge, W Birkner, A Fischer, RA
Citation: H. Parala et al., Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors, J PHYS IV, 11(PR3), 2001, pp. 473-479

Authors: Becker, R Weiss, J Devi, A Fischer, RA
Citation: R. Becker et al., Chemical vapour deposition of copper using copper(II) alkoxides, J PHYS IV, 11(PR3), 2001, pp. 569-575

Authors: Devi, A Parala, H Rogge, W Wohlfart, A Birkner, A Fischer, RA
Citation: A. Devi et al., Growth of InN whiskers from single source precursor, J PHYS IV, 11(PR3), 2001, pp. 577-584

Authors: Wohlfart, A Devi, A Hipler, F Becker, HW Fischer, RA
Citation: A. Wohlfart et al., Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD usingbisazido dimethylaminopropyl gallium as single source precursor, J PHYS IV, 11(PR3), 2001, pp. 683-687

Authors: Parala, H Devi, A Hipler, F Maile, E Birkner, A Becker, HW Fischer, RA
Citation: H. Parala et al., Investigations on InN whiskers grown by chemical vapour deposition, J CRYST GR, 231(1-2), 2001, pp. 68-74

Authors: Fischer, RA Wohlfart, A Devi, A Rogge, W
Citation: Ra. Fischer et al., Growth kinetics of GaN thin films grown by OMVPE using single source precursors, MRS I J N S, 5, 2000, pp. NIL_136-NIL_141

Authors: Devi, A Rogge, N Wohlfart, A Hipler, F Becker, HW Fischer, RA
Citation: A. Devi et al., A study of bisazido(dimethylaminopropyl)gallium as a precursor for the OMVPE of gallium nitride thin films in a cold-wall reactor system under reduced pressure, CHEM VAPOR, 6(5), 2000, pp. 245-252

Authors: Winkler, H Devi, A Manz, A Wohlfart, A Rogge, W Fischer, RA
Citation: H. Winkler et al., Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor, PHYS ST S-A, 177(1), 2000, pp. 27-35

Authors: Sussek, H Stark, O Devi, A Pritzkow, H Fischer, RA
Citation: H. Sussek et al., Precursor chemistry of Group III nitrides - Part XVI. Synthesis and structure of monomeric penta-coordinated intramolecularly adduct-stabilized amidobisazides of aluminum, gallium and indium with an all-nitrogen coordinationsphere: OMCVD of GaN using (N-3)(2)Ga{N[CH2CH2(NEt2)](2)}, J ORGMET CH, 602(1-2), 2000, pp. 29-36

Authors: Devi, A Sussek, H Pritzkow, H Winter, M Fischer, RA
Citation: A. Devi et al., Molecular precursors to group 13 nitrides, 14 Synthesis and structures of (N-3)(2)Ga[(CH2)(3)NMe2], (N-3)Ga[(CH2)(3)NMe2](2) and (N-3)(3)Ga(NR3) (R =CH3, C2H5), EUR J INORG, (12), 1999, pp. 2127-2134

Authors: Devi, A Shivashankar, SA
Citation: A. Devi et Sa. Shivashankar, Thermal analysis of metalorganic complexes of copper for evaluation as CVDprecursors, J THERM ANA, 55(1), 1999, pp. 259-270

Authors: Devi, A Rogge, W Fischer, RA Stowasser, F Sussek, H Becker, HW Schafer, J Wolfrum, J
Citation: A. Devi et al., OMVPE of GaN using (N-3)(2)Ga[(CH2)(3)N(CH3)(2)] (BAZIGA) in a cold wall reactor, J PHYS IV, 9(P8), 1999, pp. 589-595

Authors: Behura, SK Sahu, SC Rajamani, S Devi, A Mago, R Nair, S Mohan, M
Citation: Sk. Behura et al., Differentiation of Asian rice gall midge, Orseolia oryzae (Wood-Mason), biotypes by sequence characterized amplified regions (SCARs), INSEC MOL B, 8(3), 1999, pp. 391-397

Authors: Devi, A Benn, PA
Citation: A. Devi et Pa. Benn, X-chromosome abnormalities in women with premature ovarian failure, J REPRO MED, 44(4), 1999, pp. 321-324
Risultati: 1-15 |