Results: 1-25 | 26-28
Results: 1-25/28

Authors: Hamma, S Cabarrocas, PRI
Citation: S. Hamma et Pri. Cabarrocas, Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications, SOL EN MAT, 69(3), 2001, pp. 217-239

Authors: Hadjadj, A Beorchia, A Boufendi, L Huet, S Cabarrocas, PRI
Citation: A. Hadjadj et al., Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration, J VAC SCI A, 19(1), 2001, pp. 124-129

Authors: Niikura, C Kim, SY Drevillon, B Poissant, Y Cabarrocas, PRI Bouree, JE
Citation: C. Niikura et al., Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD, THIN SOL FI, 395(1-2), 2001, pp. 178-183

Authors: Brenot, R Vanderhaghen, R Drevillon, B Cabarrocas, PRI Rogel, R Mohammed-Brahim, T
Citation: R. Brenot et al., Transport mechanisms in hydrogenated microcrystalline silicon, THIN SOL FI, 383(1-2), 2001, pp. 53-56

Authors: Morral, AFI Cabarrocas, PRI
Citation: Afi. Morral et Pri. Cabarrocas, Shedding light on the growth of amorphous, polymorphous, protocrystalline and microcrystalline silicon thin films, THIN SOL FI, 383(1-2), 2001, pp. 161-164

Authors: Abramov, AS Kosarev, AI Cabarrocas, PRI Shutov, MV Vinogradov, AJ
Citation: As. Abramov et al., Photoinduced effects in RF and VHF a-Si : H films deposited with differention bombardment, THIN SOL FI, 383(1-2), 2001, pp. 178-180

Authors: Seth, T Cabarrocas, PRI
Citation: T. Seth et Pri. Cabarrocas, Plasma deposition of carbon films at room temperature from C2H2,-Ar mixtures: anodic vs. cathodic films, THIN SOL FI, 383(1-2), 2001, pp. 216-219

Authors: Equer, B Cabarrocas, PRI
Citation: B. Equer et Pri. Cabarrocas, Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000 - Preface, THIN SOL FI, 383(1-2), 2001, pp. IX-IX

Authors: Hadjadj, A Beorchia, A Cabarrocas, PRI Boufendi, L Huet, S Bubendorff, JL
Citation: A. Hadjadj et al., Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films, J PHYS D, 34(5), 2001, pp. 690-699

Authors: Paillard, V Puech, P Sirvin, R Hamma, S Cabarrocas, PRI
Citation: V. Paillard et al., Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry, J APPL PHYS, 90(7), 2001, pp. 3276-3279

Authors: Hadjad, A Cabarrocas, PRI Equer, B
Citation: A. Hadjad et al., Mobility-edge shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide, PHIL MAG B, 80(7), 2000, pp. 1317-1326

Authors: Morral, AFI Bertomeu, J Cabarrocas, PRI
Citation: Afi. Morral et al., The role of hydrogen in the formation of microcrystalline silicon, MAT SCI E B, 69, 2000, pp. 559-563

Authors: Hadjadj, A Boufendi, L Huet, S Schelz, S Cabarrocas, PRI Estrade-Szwarckopf, H Rousseau, B
Citation: A. Hadjadj et al., Role of the surface roughness in laser induced crystallization of nanostructured silicon films, J VAC SCI A, 18(2), 2000, pp. 529-535

Authors: Poissant, Y Cabarrocas, PRI
Citation: Y. Poissant et Pri. Cabarrocas, Optimizing phosphorous and boron doped layers for stable p-i-n solar cells, J NON-CRYST, 266, 2000, pp. 1134-1139

Authors: Cabarrocas, PRI
Citation: Pri. Cabarrocas, Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films, J NON-CRYST, 266, 2000, pp. 31-37

Authors: Morral, AFI Brenot, R Hamers, EAG Vanderhaghen, R Cabarrocas, PRI
Citation: Afi. Morral et al., In situ investigation of polymorphous silicon deposition, J NON-CRYST, 266, 2000, pp. 48-53

Authors: Butte, R Vignoli, S Meaudre, M Meaudre, R Marty, O Saviot, L Cabarrocas, PRI
Citation: R. Butte et al., Structural, optical and electronic properties of hydrogenated polymorphoussilicon films deposited at 150 degrees C, J NON-CRYST, 266, 2000, pp. 263-268

Authors: Brenot, R Vanderhaghen, R Drevillon, B Cabarrocas, PRI
Citation: R. Brenot et al., Measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 336-340

Authors: Abramov, AS Kosarev, AI Cabarrocas, PRI
Citation: As. Abramov et al., Kinetics of defects and electron, hole diffusion lengths during light soaking and consequent annealing, J NON-CRYST, 266, 2000, pp. 419-422

Authors: Hamers, EAG Morral, AFI Niikura, C Brenot, R Cabarrocas, PRI
Citation: Eag. Hamers et al., Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films, J APPL PHYS, 88(6), 2000, pp. 3674-3688

Authors: Globus, T Ganguly, G Cabarrocas, PRI
Citation: T. Globus et al., Optical characterization of hydrogenated silicon thin films using interference technique, J APPL PHYS, 88(4), 2000, pp. 1907-1915

Authors: Wehrspohn, RB Powell, MJ Deane, SC French, ID Cabarrocas, PRI
Citation: Rb. Wehrspohn et al., Dangling-bond defect state creation in microcrystalline silicon thin-film transistors, APPL PHYS L, 77(5), 2000, pp. 750-752

Authors: Butte, R Meaudre, R Meaudre, M Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: R. Butte et al., Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon, PHIL MAG B, 79(7), 1999, pp. 1079-1095

Authors: Vignoli, S Butte, R Meaudre, R Meaudre, M Cabarrocas, PRI
Citation: S. Vignoli et al., Structural properties depicted by optical measurements in hydrogenated polymorphous silicon, J PHYS-COND, 11(44), 1999, pp. 8749-8757

Authors: Meaudre, M Meaudre, R Butte, R Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: M. Meaudre et al., Midgap density of states in hydrogenated polymorphous silicon, J APPL PHYS, 86(2), 1999, pp. 946-950
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