Results: 1-23 |
Results: 23

Authors: SHEU JK SU YK CHANG SJ JOU MJ LIU CC CHI GC
Citation: Jk. Sheu et al., INVESTIGATION OF WAFER-BONDED (ALXGA1-X)(0.5)IN0.5P GAP LIGHT-EMITTING-DIODES/, IEE proceedings. Optoelectronics, 145(4), 1998, pp. 248-252

Authors: ZHANG ZB CHI GC ZHOU ZH JIN BH CHEN RY
Citation: Zb. Zhang et al., STUDY OF THE HYDROGENATION OF ALPHA,BETA-UNSATURATED COMPOUNDS CATALYZED BY TRICHLOROGERMANE IN AQUEOUS-SOLUTION, Silicon, germanium, tin and lead compounds, 21(10), 1998, pp. 627-628

Authors: SHEU JK SU YK CHANG SJ CHI GC LIN KB LIU CC CHIU CC
Citation: Jk. Sheu et al., ELECTRICAL DERIVATIVE CHARACTERISTICS OF ION-IMPLANTED ALGAINP GAINP MULTIQUANTUM-WELL LASERS/, Solid-state electronics, 42(10), 1998, pp. 1867-1869

Authors: SHEU JK SU YK CHI GC PONG BJ CHEN CY HUANG CN CHEN WC
Citation: Jk. Sheu et al., PHOTOLUMINESCENCE SPECTROSCOPY OF MG-DOPED GAN, Journal of applied physics, 84(8), 1998, pp. 4590-4594

Authors: SHEU JK SU YK CHI GC CHEN WC CHEN CY HUANG CN HONG JM YU YC WANG CW LIN EK
Citation: Jk. Sheu et al., THE EFFECT OF THERMAL ANNEALING ON THE NI AU CONTACT OF P-TYPE GAN/, Journal of applied physics, 83(6), 1998, pp. 3172-3175

Authors: PONG BJ PAN CJ TENG YC CHI GC LI WH LEE KC LEE CH
Citation: Bj. Pong et al., STRUCTURAL DEFECTS AND MICROSTRAIN IN GAN INDUCED BY MG ION-IMPLANTATION, Journal of applied physics, 83(11), 1998, pp. 5992-5996

Authors: SHEU JK SU YK CHI GC JOU MJ CHANG CM
Citation: Jk. Sheu et al., EFFECTS OF THERMAL ANNEALING ON THE INDIUM TIN OXIDE SCHOTTKY CONTACTS OF N-GAN, Applied physics letters, 72(25), 1998, pp. 3317-3319

Authors: ZHANG ZB HE DY CHI GC CHEN RY
Citation: Zb. Zhang et al., SYNTHESIS OF SOME NEW GERMASESQUIOXIDES BY INTRAMOLECULAR CATALYTIC MANNICH-TYPE REACTIONS, Chinese journal of chemistry, 15(6), 1997, pp. 548-552

Authors: LIN CF CHENG HC FENG MS CHI GC
Citation: Cf. Lin et al., CHARACTERIZATION OF GAN EPITAXIAL LAYERS ON SIC SUBSTRATES WITH ALXGA1-XN BUFFER LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 25-28

Authors: ZHANG ZB HE DY ZHANG CX CHI GC XU XH CHEN RY
Citation: Zb. Zhang et al., SYNTHESIS OF NOVEL GERMANIUM COMPOUNDS BY INTRAMOLECULAR CATALYTICAL MANNICH-TYPE REACTION, Silicon, germanium, tin and lead compounds, 20(6), 1997, pp. 361-365

Authors: ZHANG CX ZHANG ZB TANG CC CHEN HM CHI GC CHEN RY
Citation: Cx. Zhang et al., SYNTHESIS OF GLYCEROPHOSPHOLIPID CONJUGAT ES OF URIDINE, Gaodeng xuexiao huaxue xuebao, 18(11), 1997, pp. 1809-1813

Authors: ZHOU WD ZHOU ZF CHI GC
Citation: Wd. Zhou et al., INVESTIGATION OF COMMON-PATH INTERFERENCE PROFILOMETRY, Optical engineering, 36(11), 1997, pp. 3172-3175

Authors: LIN CF CHENG HC CHI GC FENG MS GUO JD HONG JMH CHEN CY
Citation: Cf. Lin et al., GROWTH AND CHARACTERIZATIONS OF GAN ON SIC SUBSTRATES WITH BUFFER LAYERS, Journal of applied physics, 82(5), 1997, pp. 2378-2382

Authors: LIN CF CHENG HC HUANG JA FENG MS GUO JD CHI GC
Citation: Cf. Lin et al., MOBILITY ENHANCEMENTS IN ALGAN GAN/SIC WITH STAIR-STEP AND GRADED HETEROSTRUCTURES/, Applied physics letters, 70(19), 1997, pp. 2583-2585

Authors: CHANG SJ SHEU JK SU YK JOU MJ CHI GC
Citation: Sj. Chang et al., ALGAINP GAP LIGHT-EMITTING-DIODES FABRICATED BY WAFER DIRECT BONDING TECHNOLOGY/, JPN J A P 1, 35(8), 1996, pp. 4199-4202

Authors: CHEN RY CHI GC CHEN XR
Citation: Ry. Chen et al., SYNTHESIS OF 5-O-(N,N-BIS(2-CHLOROETHYL)P HOSPHORAMIDO)-2,3-O-ISOPROPYLIDENENUCLEOSIDES, Gaodeng xuexiao huaxue xuebao, 17(3), 1996, pp. 429-431

Authors: LIN CF CHI GC FENG MS GUO JD TSANG JS HONG JMH
Citation: Cf. Lin et al., THE DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF THE GAN EPITAXIALLAYER ON THE THERMAL-TREATMENT OF THE GAN BUFFER LAYER, Applied physics letters, 68(26), 1996, pp. 3758-3760

Authors: GUO JD LIN CI FENG MS PAN FM CHI GC LEE CT
Citation: Jd. Guo et al., A BILAYER TI AG OHMIC CONTACT FOR HIGHLY DOPED N-TYPE GAN FILMS/, Applied physics letters, 68(2), 1996, pp. 235-237

Authors: CHI GC JUANG C
Citation: Gc. Chi et C. Juang, TOP SAWTOOTH GRATING FOR GAAS ALGAAS QUANTUM-WELL IR DETECTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 56-58

Authors: CHI GC JUANG C
Citation: Gc. Chi et C. Juang, GAAS ALGAAS QUANTUM-WELL INFRARED DETECTORS WITH AN INTEGRAL SILICON GRATING/, JPN J A P 1, 33(5A), 1994, pp. 2483-2486

Authors: HSU JK JUANG C LEE BJ CHI GC
Citation: Jk. Hsu et al., PHOTOLUMINESCENCE STUDIES OF INTERSTITIAL ZN IN INP DUE TO RAPID THERMAL ANNEALING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1416-1418

Authors: CHI GC
Citation: Gc. Chi, AN E-BEAM EVAPORATED BOROSILICATE GLASS THIN-FILM AS AN ENCAPSULANT FOR ANNEALING BE-IMPLANT INP, Materials chemistry and physics, 39(1), 1994, pp. 69-71

Authors: CHI GC SU YK JOU MJ HUNG WC
Citation: Gc. Chi et al., WINDOW LAYER FOR CURRENT SPREADING IN ALGAINP LIGHT-EMITTING DIODE, Journal of applied physics, 76(5), 1994, pp. 2603-2611
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