Results: 1-14 |
Results: 14

Authors: Breymesser, A Schlosser, V Peiro, D Voz, C Bertomeu, J Andreu, J Summhammer, J
Citation: A. Breymesser et al., Kelvin probe measurements of microcrystalline silicon on a nanometer scaleusing SFM, SOL EN MAT, 66(1-4), 2001, pp. 171-177

Authors: Fonrodona, M Soler, D Bertomeu, J Andreu, J
Citation: M. Fonrodona et al., Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition, THIN SOL FI, 395(1-2), 2001, pp. 125-129

Authors: Orpella, A Voz, C Puigdollers, J Dosev, D Fonrodona, M Soler, D Bertomeu, J Asensi, JM Andreu, J Alcubilla, R
Citation: A. Orpella et al., Stability of hydrogenated nanocrystalline silicon thin-film transistors, THIN SOL FI, 395(1-2), 2001, pp. 335-338

Authors: Soler, D Fonrodona, M Voz, C Bertomeu, J Andreu, J
Citation: D. Soler et al., Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD, THIN SOL FI, 383(1-2), 2001, pp. 189-191

Authors: Voz, C Soler, D Fonrodona, M Bertomeu, J Asensi, JM Andreau, J
Citation: C. Voz et al., Optoelectronic studies in nanocrystalline silicon Schottky diodes obtainedby hot-wire CVD, THIN SOL FI, 383(1-2), 2001, pp. 258-260

Authors: Dosev, DK Puigdollers, J Orpella, A Voz, C Fonrodona, M Soler, D Marsal, LF Pallares, J Bertomeu, J Andreu, J Alcubilla, R
Citation: Dk. Dosev et al., Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition, THIN SOL FI, 383(1-2), 2001, pp. 307-309

Authors: Voz, C Peiro, D Fonrodona, M Soler, D Bertomeu, J Andreu, J
Citation: C. Voz et al., Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition, SOL EN MAT, 63(3), 2000, pp. 237-246

Authors: Voz, C Peiro, D Bertomeu, J Soler, D Fonrodona, M Andreu, J
Citation: C. Voz et al., Optimisation of doped microcrystalline silicon films deposited at very lowtemperatures by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 278-283

Authors: Puigdollers, J Dosev, D Orpella, A Vox, C Peiro, D Bertomeu, J Marsal, LF Pallares, J Andreu, J Alcubilla, R
Citation: J. Puigdollers et al., Microcrystalline silicon thin film transistors obtained by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 526-529

Authors: Peiro, D Bertomeu, J Voz, C Fonrodona, M Soler, D Andreu, J
Citation: D. Peiro et al., Structure of microcrystalline silicon films deposited at very low temperatures by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 536-541

Authors: Morral, AFI Bertomeu, J Cabarrocas, PRI
Citation: Afi. Morral et al., The role of hydrogen in the formation of microcrystalline silicon, MAT SCI E B, 69, 2000, pp. 559-563

Authors: Puigdollers, J Orpella, A Dosev, D Voz, C Peiro, D Pallares, J Marsal, LF Bertomeu, J Andreu, J Alcubilla, R
Citation: J. Puigdollers et al., Thin film transistors obtained by hot wire CVD, J NON-CRYST, 266, 2000, pp. 1304-1309

Authors: Niikura, C Guillet, J Brenot, R Equer, B Bouree, JE Voz, C Peiro, D Asensi, JM Bertomeu, J Andreu, J
Citation: C. Niikura et al., Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 385-390

Authors: Stoger, M Breymesser, A Schlosser, V Ramadori, M Plunger, V Peiro, D Voz, C Bertomeu, J Nelhiebel, M Schattschneider, P Andreu, J
Citation: M. Stoger et al., Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD, PHYSICA B, 274, 1999, pp. 540-543
Risultati: 1-14 |