Results: 1-6 |
Results: 6

Authors: Benissad, N Aumaille, K Granier, A Goullet, A
Citation: N. Benissad et al., Structure and properties of silicon oxide films deposited in a dual microwave-rf plasma reactor, THIN SOL FI, 384(2), 2001, pp. 230-235

Authors: Aumaille, K Granier, A Grolleau, B Turban, G
Citation: K. Aumaille et al., Mass spectrometric investigation of the positive ions formed in low-pressure oxygen/tetraethoxysilane and argon/tetraethoxysilane plasmas, J APPL PHYS, 89(9), 2001, pp. 5227-5229

Authors: Aumaille, K Granier, A Schmidt, M Grolleau, B Vallee, C Turban, G
Citation: K. Aumaille et al., Study of oxygen/tetraethoxysilane plasmas in a helicon reactor using optical emission spectroscopy and mass spectrometry, PLASMA SOUR, 9(3), 2000, pp. 331-339

Authors: Aumaille, K Vallee, C Granier, A Goullet, A Gaboriau, F Turban, G
Citation: K. Aumaille et al., A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor, THIN SOL FI, 359(2), 2000, pp. 188-196

Authors: Granier, A Vallee, C Goullet, A Aumaille, K Turban, G
Citation: A. Granier et al., Experimental investigation of the respective roles of oxygen atoms and electrons in the deposition of SiO2 in O-2/TEOS helicon plasmas, J VAC SCI A, 17(5), 1999, pp. 2470-2474

Authors: Vallee, C Granier, A Aumaille, K Cardinaud, C Goullet, A Coulon, N Turban, G
Citation: C. Vallee et al., Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma, APPL SURF S, 139, 1999, pp. 57-61
Risultati: 1-6 |