Results: 1-12 |
Results: 12

Authors: UCHIDA K MIURA N SAKUMA Y AWANO Y FUTATSUGI T YOKOYAMA N
Citation: K. Uchida et al., MAGNETOPHOTOLUMINESCENCE IN HIGH MAGNETIC-FIELDS FROM INGAAS GAAS QUANTUM DOTS FORMED IN TETRAHEDRAL-SHAPED RECESSES/, Physica. B, Condensed matter, 251, 1998, pp. 247-251

Authors: HARADA N SAITO T OIKAWA H OHASHI Y AWANO Y ABE M HIKOSAKA K
Citation: N. Harada et al., 0.1 MU-M-GATE INGAP INGAAS HEMT TECHNOLOGY FOR MILLIMETER-WAVE APPLICATIONS/, IEICE transactions on electronics, E81C(6), 1998, pp. 876-881

Authors: SAKUMA Y AWANO Y FUTATSUGI T YOKOYAMA N UCHIDA K MIURA N
Citation: Y. Sakuma et al., MAGNETOPHOTOLUMINESCENCE STUDY OF QUANTUM DOTS FORMED ON TETRAHEDRAL-SHAPED RECESSES, Solid-state electronics, 42(7-8), 1998, pp. 1341-1347

Authors: SEKIGUCHI T SAKUMA Y AWANO Y YOKOYAMA N
Citation: T. Sekiguchi et al., CATHODOLUMINESCENCE STUDY OF INGAAS GAAS QUANTUM-DOT STRUCTURES FORMED ON THE TETRAHEDRAL-SHAPED RECESSES ON GAAS (111)B SUBSTRATES/, Journal of applied physics, 83(9), 1998, pp. 4944-4950

Authors: WIRNER C AWANO Y FUTATSUGI T YOKOYAMA N NAKAGAWA T BANDO H MUTO S OHNO M MIURA N
Citation: C. Wirner et al., PHONON-ASSISTED TUNNELING AND PEAK-TO-VALLEY RATIO IN A MAGNETICALLY CONFINED QUASI-ZERO-DIMENSIONAL INGAAS INALAS RESONANT-TUNNELING DIODE/, JPN J A P 1, 36(3B), 1997, pp. 1958-1960

Authors: SUGIYAMA Y NAKATA Y FUTATSUGI T SUGAWARA M AWANO Y YOKOYAMA N
Citation: Y. Sugiyama et al., NARROW PHOTOLUMINESCENCE LINE-WIDTH OF CLOSELY STACKED INAS SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, JPN J A P 2, 36(2A), 1997, pp. 158-161

Authors: TAGAWA Y AWANO Y YOKOYAMA N
Citation: Y. Tagawa et al., ANISOTROPIC HOLE VELOCITY OVERSHOOT IN GAAS AND SI, Physica status solidi. b, Basic research, 204(1), 1997, pp. 545-547

Authors: WIRNER C AWANO Y YOKOYAMA N OHNO M MIURA N NAKAGAWA T BANDO H
Citation: C. Wirner et al., PHONON BOTTLENECK EFFECTS IN AN INGAAS INALAS TRIPLE BARRIER TUNNELING DIODE AT HIGH MAGNETIC-FIELDS/, Semiconductor science and technology, 12(8), 1997, pp. 998-1002

Authors: SUGIYAMA Y NAKATA Y MUTO S HORIGUCHI N FUTATSUGI T AWANO Y YOKOYAMA N
Citation: Y. Sugiyama et al., OBSERVATION OF SPECTRAL HOLE-BURNING IN PHOTOCURRENT SPECTRUM OF INASSELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN PIN DIODE, Electronics Letters, 33(19), 1997, pp. 1655-1657

Authors: FUKUE J NAKASHIMA R ARIMOTO J AWANO Y HONDA S ISHIKAWA K KATO T KAWAI N MATSUMOTO K OKUGAMI M SAKAGUCHI T TAJIMA Y TANABE K TSUDA E WATANABE Y YAMADA Y YOKOO T
Citation: J. Fukue et al., VRI LIGHT CURVES OF SS-433 - PHOTOMETRY AND MODEL, Publications of the Astronomical Society of Japan, 49(1), 1997, pp. 93-100

Authors: AWANO Y SAKUMA Y SUGIYAMA Y SEKIGUCHI T MUTO S YOKOYAMA N
Citation: Y. Awano et al., INGAAS GAAS TETRAHEDRAL-SHAPED RECESS QUANTUM-DOT (TSR-QD)TECHNOLOGY/, IEICE transactions on electronics, E79C(11), 1996, pp. 1557-1561

Authors: WIMER C AWANO Y MORI T YOKOYAMA N NAKAGAWA T BANDO H MUTO S
Citation: C. Wimer et al., LONGITUDINAL OPTICAL PHONON RELAXATION IN A GAAS ALGAAS TRIPLE BARRIER TUNNEL-DIODE AT STRONG PERPENDICULAR MAGNETIC-FIELDS/, Applied physics letters, 69(11), 1996, pp. 1596-1598
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