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Authors: Smith, DJ
Citation: Dj. Smith, Special issue: Containing papers presented at the 2001 Lawrence Symposium on Critical Issues in Epitaxy, January 3-6, 2001, Scottsdale Arizona - Preface, MAT SCI E B, 87(3), 2001, pp. 203-203

Authors: Ragan, R Min, KS Atwater, HA
Citation: R. Ragan et al., Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1-x/Ge and SnxSi1-x/Si alloy systems, MAT SCI E B, 87(3), 2001, pp. 204-213

Authors: Hibino, H Ogino, T
Citation: H. Hibino et T. Ogino, Growth of Si twinning superlattice, MAT SCI E B, 87(3), 2001, pp. 214-221

Authors: Chen, Y Ohlberg, DAA Williams, RS
Citation: Y. Chen et al., Epitaxial growth of erbium silicide nanowires on silicon(001), MAT SCI E B, 87(3), 2001, pp. 222-226

Authors: Iliopoulos, E Ludwig, KF Moustakas, TD Komninou, P Karakostas, T Nouet, G Chu, SNG
Citation: E. Iliopoulos et al., Epitaxial growth and self-organized superlattice structures in AlGaN filmsgrown by plasma assisted molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 227-236

Authors: Piscopiello, E Catalano, M Antisari, MV Passaseo, A Branca, E Cingolani, R Berti, M
Citation: E. Piscopiello et al., Influence of the N-2/H-2 ratio on the structural features of InxGa1-xN/GaNfilms grown by MOCVD, MAT SCI E B, 87(3), 2001, pp. 237-243

Authors: Fan, ZY Newman, N
Citation: Zy. Fan et N. Newman, Experimental determination of the rates of decomposition and cation desorption from AlN surfaces, MAT SCI E B, 87(3), 2001, pp. 244-248

Authors: Christou, A Dimoulas, A Cornet, A
Citation: A. Christou et al., Epitaxial issues and growth morphologies of InAlAs/InGaAs hetero structures on non-(100) InP index substrates, MAT SCI E B, 87(3), 2001, pp. 249-255

Authors: Taurino, A Catalano, M De Giorgi, M Passaseo, A Cingolani, R
Citation: A. Taurino et al., Effects of coupling on the structural properties of InxGa1-xAs/GaAs 1-D and 0-D sell-organized quantum structures, MAT SCI E B, 87(3), 2001, pp. 256-261

Authors: Osten, HJ Knoll, D Rucker, H
Citation: Hj. Osten et al., Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application, MAT SCI E B, 87(3), 2001, pp. 262-270

Authors: Greve, DW
Citation: Dw. Greve, Si-Ge-C growth and devices, MAT SCI E B, 87(3), 2001, pp. 271-276

Authors: Rack, MJ Thornton, TJ Ferry, DK Roberts, J Westhoff, RC Robinson, M
Citation: Mj. Rack et al., Cryogenic field effect transistors using strained silicon quantum wells inSi : SiGe heterostructures grown by APCVD, MAT SCI E B, 87(3), 2001, pp. 277-281

Authors: Schlom, DG Haeni, JH Lettieri, J Theis, CD Tian, W Jiang, JC Pan, XQ
Citation: Dg. Schlom et al., Oxide nano-engineering using MBE, MAT SCI E B, 87(3), 2001, pp. 282-291

Authors: Droopad, R Yu, Z Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296

Authors: Osten, HJ Liu, JP Bugiel, E Mussig, HJ Zaumseil, P
Citation: Hj. Osten et al., Epitaxial growth of praseodymium oxide on silicon, MAT SCI E B, 87(3), 2001, pp. 297-302

Authors: Herbots, N Shaw, JM Hurst, QB Grams, MP Culbertson, RJ Smith, DJ Atluri, V Zimmerman, P
Citation: N. Herbots et al., The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 x 1) Si(100), MAT SCI E B, 87(3), 2001, pp. 303-316

Authors: Brown, AS Doolittle, WA Jokerst, NM Kang, S Huang, S Seo, SW
Citation: As. Brown et al., Heterogeneous materials integration: compliant substrates to active deviceand materials packaging, MAT SCI E B, 87(3), 2001, pp. 317-322

Authors: Tong, QY
Citation: Qy. Tong, Wafer bonding for integrated materials, MAT SCI E B, 87(3), 2001, pp. 323-328

Authors: Stringfellow, GB
Citation: Gb. Stringfellow, Fundamental aspects of organometallic vapor phase epitaxy, MAT SCI E B, 87(2), 2001, pp. 97-116

Authors: Lu, GW Xia, HR Wang, XQ Xu, D Chen, Y Zhou, YQ
Citation: Gw. Lu et al., Raman scattering investigation of the zinc cadmium tetrathiocyanate singlecrystals, MAT SCI E B, 87(2), 2001, pp. 117-121

Authors: Pandita, S Tickoo, R Bamzai, KK Kotru, PN
Citation: S. Pandita et al., Dielectric characteristics of gel grown mixed rare earth (didymium) heptamolybdate crystals, MAT SCI E B, 87(2), 2001, pp. 122-129

Authors: Lu, GW Xia, HR Xue, QZ Liu, PJ Ai, ST
Citation: Gw. Lu et al., Monte Carlo study of the polarization and depolarization properties of order-disorder ferroelectrics, MAT SCI E B, 87(2), 2001, pp. 130-133

Authors: Patil, S Mahajan, JR More, MA Patil, PP
Citation: S. Patil et al., Influence of substrate conductivity on electrochemical polymerization of O-methoxyaniline, MAT SCI E B, 87(2), 2001, pp. 134-140

Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Interface states density distribution in Au/n-GaAs Schottky diodes on n-Geand n-GaAs substrates, MAT SCI E B, 87(2), 2001, pp. 141-147

Authors: Kityk, IV Sahraoui, B Ledoux-Rak, I Salle, M Migalska-Zalaz, A Kazu, T Gorgues, A
Citation: Iv. Kityk et al., Push-pull chromophores incorporated in 1,3-dithiol-2-ylidene moiety as newelectrooptics materials, MAT SCI E B, 87(2), 2001, pp. 148-159
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