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Table of contents of journal: *IEEE electron device letters

Results: 1-25/1505

Authors: Rohner, M Willen, B Jackel, H
Citation: M. Rohner et al., Velocity-modulation and transit-time effects in InP/InGaAs HBTs, IEEE ELEC D, 22(9), 2001, pp. 417-419

Authors: Chiu, HW Ho, NS Lu, SS
Citation: Hw. Chiu et al., A process for the formation of submicron V-gate by micromachined V-groovesusing GaInP/GaAs selective etching technique, IEEE ELEC D, 22(9), 2001, pp. 420-422

Authors: Hamada, T Saito, Y Hirayama, M Aharoni, H Ohmi, T
Citation: T. Hamada et al., Thin inter-polyoxide films for flash memories grown at low temperature (400 degrees C) by oxygen radicals, IEEE ELEC D, 22(9), 2001, pp. 423-425

Authors: Ito, F Tomihari, Y Okada, Y Konuma, K Okamoto, A
Citation: F. Ito et al., Carbon-nanotube-based triode-field-emission displays using gated emitter structure, IEEE ELEC D, 22(9), 2001, pp. 426-428

Authors: Jeon, JH Lee, MC Park, KC Han, MK
Citation: Jh. Jeon et al., A new polycrystalline silicon TFT with a single grain boundary in the channel, IEEE ELEC D, 22(9), 2001, pp. 429-431

Authors: Meneghesso, G Chini, A Verzellesi, G Cavallini, A Canali, C Zanoni, E
Citation: G. Meneghesso et al., Trap characterization in buried-gate n-channel 6H-SiC JFETs, IEEE ELEC D, 22(9), 2001, pp. 432-434

Authors: Kumar, M Tan, Y Sin, JKO
Citation: M. Kumar et al., Novel isolation structures for TFSOI technology, IEEE ELEC D, 22(9), 2001, pp. 435-437

Authors: Huang, S Amaratunga, GAJ Udrea, F
Citation: S. Huang et al., A novel single gate MOS controlled current saturated thyristor, IEEE ELEC D, 22(9), 2001, pp. 438-440

Authors: Cheng, KG Hess, K Lyding, JW
Citation: Kg. Cheng et al., Deuterium passivation of interface traps in MOS devices, IEEE ELEC D, 22(9), 2001, pp. 441-443

Authors: Polishchuk, I Ranade, P King, TJ Hu, CM
Citation: I. Polishchuk et al., Dual work function metal gate CMOS technology using metal interdiffusion, IEEE ELEC D, 22(9), 2001, pp. 444-446

Authors: Choi, YK Ha, DW King, TJ Hu, CM
Citation: Yk. Choi et al., Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain, IEEE ELEC D, 22(9), 2001, pp. 447-448

Authors: Lee, H Lee, JH Shin, H Park, YJ Min, HS
Citation: H. Lee et al., Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs, IEEE ELEC D, 22(9), 2001, pp. 449-451

Authors: Dvorak, MW Bolognesi, CR Pitts, OJ Watkins, SP
Citation: Mw. Dvorak et al., 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V, IEEE ELEC D, 22(8), 2001, pp. 361-363

Authors: Dumka, DC Hoke, WE Lemonias, PJ Cueva, G Adesida, I
Citation: Dc. Dumka et al., High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates, IEEE ELEC D, 22(8), 2001, pp. 364-366

Authors: Yamashita, Y Endoh, A Shinohara, K Higashiwaki, M Hikosaka, K Mimura, T Hiyamizu, S Matsui, T
Citation: Y. Yamashita et al., Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency, IEEE ELEC D, 22(8), 2001, pp. 367-369

Authors: Willen, B Rohner, M Jackel, H
Citation: B. Willen et al., Unilateral power gain limitations due to dynamic base widening effects, IEEE ELEC D, 22(8), 2001, pp. 370-372

Authors: Karmalkar, S Deng, JY Shur, MS Gaska, R
Citation: S. Karmalkar et al., RESURF AlGaN/GaN HEMT for high voltage power switching, IEEE ELEC D, 22(8), 2001, pp. 373-375

Authors: Akita, M Kishimoto, S Mizutani, T
Citation: M. Akita et al., High-frequency measurements of AlGaN/GaN HEMTs at high temperatures, IEEE ELEC D, 22(8), 2001, pp. 376-377

Authors: Chen, CH Fang, YK Yang, CW Ting, SF Tsair, YS Yu, MC Hou, TH Wang, MF Chen, SC Yu, CH Liang, MS
Citation: Ch. Chen et al., Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion, IEEE ELEC D, 22(8), 2001, pp. 378-380

Authors: Dimitriadis, CA Kamarinos, G Brini, J
Citation: Ca. Dimitriadis et al., Model of low frequency noise in polycrystalline silicon thin-film transistors, IEEE ELEC D, 22(8), 2001, pp. 381-383

Authors: Chan, ACK Wang, HM Chan, MSJ
Citation: Ack. Chan et al., High quality thermal oxide on LPSOI formed by high temperature enhanced MILC, IEEE ELEC D, 22(8), 2001, pp. 384-386

Authors: Bera, LK Choi, WK Tan, CS Samanta, SK Maiti, CK
Citation: Lk. Bera et al., High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films, IEEE ELEC D, 22(8), 2001, pp. 387-389

Authors: Taniuchi, H Umezawa, H Arima, T Tachiki, M Kawarada, H
Citation: H. Taniuchi et al., High-frequency performance of diamond field-effect transistor, IEEE ELEC D, 22(8), 2001, pp. 390-392

Authors: Zhang, SD Han, RQ Chan, MSJ
Citation: Sd. Zhang et al., A novel self-aligned bottom gate poly-Si TFT with in-situ LDD, IEEE ELEC D, 22(8), 2001, pp. 393-395

Authors: Kim, CH Jung, SH Yoo, JS Han, MK
Citation: Ch. Kim et al., Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping, IEEE ELEC D, 22(8), 2001, pp. 396-398
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