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Authors: Khang, DY Lee, HH
Citation: Dy. Khang et Hh. Lee, Contact-pressing metallization, J VAC SCI B, 19(5), 2001, pp. 1687-1690

Authors: Zhu, CC Liu, WH Huangfu, LJ
Citation: Cc. Zhu et al., Flat-panel structure for field-emission displays with carbon nanotube cathode, J VAC SCI B, 19(5), 2001, pp. 1691-1693

Authors: Grover, R Hryniewicz, JV King, OS Van, V
Citation: R. Grover et al., Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls, J VAC SCI B, 19(5), 2001, pp. 1694-1698

Authors: Alkemade, PFA Jiang, ZX
Citation: Pfa. Alkemade et Zx. Jiang, Complex roughening of Si under oblique bombardment by low-energy oxygen ions, J VAC SCI B, 19(5), 2001, pp. 1699-1705

Authors: Hu, YZ Tay, SP
Citation: Yz. Hu et Sp. Tay, Characterization of high-K dielectric ZrO2 films annealed by rapid thermalprocessing, J VAC SCI B, 19(5), 2001, pp. 1706-1714

Authors: Muller, B Riedel, M Michel, R De Paul, SM Hofer, R Heger, D Grutzmacher, D
Citation: B. Muller et al., Impact of nanometer-scale roughness on contact-angle hysteresis and globulin adsorption, J VAC SCI B, 19(5), 2001, pp. 1715-1720

Authors: Skriniarova, J Bochem, P Fox, A Kordos, P
Citation: J. Skriniarova et al., Photoenhanced wet etching of gallium nitride in KOH-based solutions, J VAC SCI B, 19(5), 2001, pp. 1721-1727

Authors: Kise, K Aya, S Yabe, H Ami, S Marumoto, K Satoh, S Watanabe, H
Citation: K. Kise et al., Electron beam writing methods of x-ray masks for eliminating thermal imageplacement errors, J VAC SCI B, 19(5), 2001, pp. 1728-1733

Authors: Lin, YJ Lee, CT
Citation: Yj. Lin et Ct. Lee, Surface analysis of (NH4)(2)S-x-treated InGaN using x-ray photoelectron spectroscopy, J VAC SCI B, 19(5), 2001, pp. 1734-1738

Authors: Lin, CM Chiang, SJ Yokoyama, M Chuang, FY Wong, WC Lin, IN
Citation: Cm. Lin et al., Enhancement on field-emission characteristics of diamondlike coated Mo substrates by redox process, J VAC SCI B, 19(5), 2001, pp. 1739-1742

Authors: Sharma, S Sunkara, MK Crain, MM Lyuksyutov, SF Harfenist, SA Walsh, KM Cohn, RW
Citation: S. Sharma et al., Selective plasma nitridation and contrast reversed etching of silicon, J VAC SCI B, 19(5), 2001, pp. 1743-1746

Authors: Georgiev, N Mozume, T
Citation: N. Georgiev et T. Mozume, Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP, J VAC SCI B, 19(5), 2001, pp. 1747-1751

Authors: Hennessy, K Lent, CS
Citation: K. Hennessy et Cs. Lent, Clocking of molecular quantum-dot cellular automata, J VAC SCI B, 19(5), 2001, pp. 1752-1755

Authors: Esser, N Schmidt, WG Cobet, C Fleischer, K Shkrebtii, AI Fimland, BO Richter, W
Citation: N. Esser et al., Atomic structure and optical anisotropy of III-V(001) surfaces, J VAC SCI B, 19(5), 2001, pp. 1756-1761

Authors: Brillson, LJ
Citation: Lj. Brillson, Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films, J VAC SCI B, 19(5), 2001, pp. 1762-1768

Authors: Francois-St-Cyr, H Anoshkina, E Stevie, F Chow, L Richardson, K Zhou, D
Citation: H. Francois-st-cyr et al., Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon, J VAC SCI B, 19(5), 2001, pp. 1769-1774

Authors: Yoon, SF Ng, TK Zheng, HQ
Citation: Sf. Yoon et al., Low damage and low surface roughness GaInP etching in Cl-2/Ar electron cyclotron resonance process, J VAC SCI B, 19(5), 2001, pp. 1775-1781

Authors: Chang, JP Lin, YS Chu, K
Citation: Jp. Chang et al., Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application, J VAC SCI B, 19(5), 2001, pp. 1782-1787

Authors: Park, B Conti, R Economikos, L Chakravarti, A Ellenberger, J
Citation: B. Park et al., Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films, J VAC SCI B, 19(5), 2001, pp. 1788-1795

Authors: Winningham, TA Whipple, SG Douglas, K
Citation: Ta. Winningham et al., Pattern transfer from a biomolecular nanomask to a substrate via an intermediate transfer layer, J VAC SCI B, 19(5), 2001, pp. 1796-1802

Authors: Fu, WB Venkat, R Meyyappan, M
Citation: Wb. Fu et al., Theoretical study of GaN molecular beam epitaxy growth using electron cyclotron resonance nitrogen plasma, J VAC SCI B, 19(5), 2001, pp. 1803-1807

Authors: Basnar, B Golka, S Gornik, E Harasek, S Bertagnolli, E Schatzmayr, M Smoliner, J
Citation: B. Basnar et al., Calibrated scanning capacitance microscopy investigations on p-doped Si multilayers, J VAC SCI B, 19(5), 2001, pp. 1808-1812

Authors: Dick, B Brett, MJ Smy, T Belov, M Freeman, MR
Citation: B. Dick et al., Periodic submicrometer structures by sputtering, J VAC SCI B, 19(5), 2001, pp. 1813-1819

Authors: Li, DJ Zhang, JC
Citation: Dj. Li et Jc. Zhang, Focusing field emission arrays constructed by self-aligned photolithography, J VAC SCI B, 19(5), 2001, pp. 1820-1823

Authors: Nitta, T Ohno, Y Shimomura, S Hiyamizu, S
Citation: T. Nitta et al., Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy, J VAC SCI B, 19(5), 2001, pp. 1824-1827
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