Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/681

Authors: Pickrell, GW Chang, KL Epple, JH Cheng, KY Hsieh, KC
Citation: Gw. Pickrell et al., Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy, J VAC SCI B, 18(6), 2000, pp. 2611-2614

Authors: Yen, CH Lin, KP Yu, KH Chang, WL Lin, KW Liu, WC
Citation: Ch. Yen et al., Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors, J VAC SCI B, 18(6), 2000, pp. 2615-2619

Authors: Starikov, D Berishev, I Um, JW Badi, N Medelci, N Tempez, A Bensaoula, A
Citation: D. Starikov et al., Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum, J VAC SCI B, 18(6), 2000, pp. 2620-2623

Authors: Lin, RM Tang, SF Kuan, CH
Citation: Rm. Lin et al., Study sf current leakage in InAs p-i-n photodetectors, J VAC SCI B, 18(6), 2000, pp. 2624-2626

Authors: He, L
Citation: L. He, Low temperature deposition for high performance photodetector, J VAC SCI B, 18(6), 2000, pp. 2627-2630

Authors: Moon, YT Kim, DJ Song, KM Kim, DW Yi, MS Noh, DY Park, SJ
Citation: Yt. Moon et al., Effect of growth interruption and the introduction of H-2 on the growth ofInGaN/GaN multiple quantum wells, J VAC SCI B, 18(6), 2000, pp. 2631-2634

Authors: Ishikawa, T Kohmoto, S Nishikawa, S Nishimura, T Asakawa, K
Citation: T. Ishikawa et al., Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography, J VAC SCI B, 18(6), 2000, pp. 2635-2639

Authors: Tsutsumi, T Ishii, K Hiroshima, H Hazra, S Yamanaka, M Sakata, I Taguchi, H Suzuki, E Tomizawa, K
Citation: T. Tsutsumi et al., Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process, J VAC SCI B, 18(6), 2000, pp. 2640-2645

Authors: Upward, MD Cotier, BN Moriarty, P Beton, PH Baker, SH Binns, C Edmonds, K
Citation: Md. Upward et al., Deposition of Fe clusters on Si surfaces, J VAC SCI B, 18(6), 2000, pp. 2646-2649

Authors: Kim, CG
Citation: Cg. Kim, Initial growth analysis of Si overlayers on cerium oxide layers, J VAC SCI B, 18(6), 2000, pp. 2650-2652

Authors: Huang, SJ Tsutsui, G Sakaue, H Shingubara, S Takahagi, T
Citation: Sj. Huang et al., Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles, J VAC SCI B, 18(6), 2000, pp. 2653-2657

Authors: Zeng, QD Wang, C Bai, CL Li, Y Yan, XJ
Citation: Qd. Zeng et al., Atomic force microscopy of reaction of ammonia gas with crystalline substituted benzoic acid, J VAC SCI B, 18(6), 2000, pp. 2658-2663

Authors: Shin, S Kye, JI Pi, UH Khim, ZG Hong, JW Park, SI Yoon, S
Citation: S. Shin et al., Effect of photoenhanced minority carriers in metal-oxide-semiconductor capacitor studied by scanning capacitance microscopy, J VAC SCI B, 18(6), 2000, pp. 2664-2668

Authors: Akiyama, T Staufer, U de Rooij, NF Lange, D Hagleitner, C Brand, O Baltes, H Tonin, A Hidber, HR
Citation: T. Akiyama et al., Integrated atomic force microscopy array probe with metal-oxide-semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal-oxide-semiconductor electronics, J VAC SCI B, 18(6), 2000, pp. 2669-2675

Authors: Hasegawa, Y Tsuji, K Nakayama, K Wagatsuma, K Sakurai, T
Citation: Y. Hasegawa et al., X-ray source combined ultrahigh-vacuum scanning tunneling microscopy for elemental analysis, J VAC SCI B, 18(6), 2000, pp. 2676-2680

Authors: Dou, JY Chen, EG Zhu, CC Yang, DQ
Citation: Jy. Dou et al., New method for imaging atoms, J VAC SCI B, 18(6), 2000, pp. 2681-2683

Authors: Zhang, HJ Wu, L Huang, F Cheng, SW
Citation: Hj. Zhang et al., Dual tunneling-unit scanning tunneling microscope for practical length measurement based on reference scales, J VAC SCI B, 18(6), 2000, pp. 2684-2687

Authors: Hong, SB Woo, JW Shin, HJ Kim, E Kim, KH Jeon, JU Pak, YE No, K
Citation: Sb. Hong et al., Effect of metal-insulator-semiconductor structure derived space charge field on the tip vibration signal in electrostatic force microscopy, J VAC SCI B, 18(6), 2000, pp. 2688-2691

Authors: Miyashita, H Esashi, M
Citation: H. Miyashita et M. Esashi, Wide dynamic range silicon diaphragm vacuum sensor by electrostatic servo system, J VAC SCI B, 18(6), 2000, pp. 2692-2697

Authors: Alexandrou, I Baxendale, M Rupesinghe, NL Amaratunga, GAJ Kiely, CJ
Citation: I. Alexandrou et al., Field emission properties of nanocomposite carbon nitride films, J VAC SCI B, 18(6), 2000, pp. 2698-2703

Authors: Lei, W Wang, BP Tong, LS Yin, HC Tu, Y Zhu, CC
Citation: W. Lei et al., Study of the emission performance of carbon nanotubes, J VAC SCI B, 18(6), 2000, pp. 2704-2709

Authors: Ji, H Jin, ZS Gu, CZ Wang, JY Lu, XY Liu, BB Gao, CX Yuan, G Wang, WB
Citation: H. Ji et al., Influence of diamond film thickness on field emission characteristics, J VAC SCI B, 18(6), 2000, pp. 2710-2713

Authors: Fitzgerald, AG Fan, Y John, P Troupe, CE Wilson, JIR
Citation: Ag. Fitzgerald et al., Characterization of the surface morphology and electronic properties of microwave enhanced chemical vapor deposited diamond films, J VAC SCI B, 18(6), 2000, pp. 2714-2721

Authors: Kichambare, PD Tarntair, FG Chen, LC Chen, KH Cheng, HC
Citation: Pd. Kichambare et al., Enhancement in field emission of silicon microtips by bias-assisted carburization, J VAC SCI B, 18(6), 2000, pp. 2722-2729

Authors: Robinson, APG Palmer, RE Tada, T Kanayama, T Allen, MT Preece, JA Harris, KDM
Citation: Apg. Robinson et al., Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography, J VAC SCI B, 18(6), 2000, pp. 2730-2736
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>